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AUIRF7665S2TR

AUIRF7665S2TR
Mfr. #:
AUIRF7665S2TR
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 100V AUTO GRADE 1 N-CH HEXFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AUIRF7665S2TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRF7665S2TR DatasheetAUIRF7665S2TR Datasheet (P4-P6)AUIRF7665S2TR Datasheet (P7-P9)AUIRF7665S2TR Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
AUIRF7665S2TR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-SB
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
14.4 A
Rds On - Drain-Source-Widerstand:
62 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
8.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
30 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
0.74 mm
Länge:
4.85 mm
Transistortyp:
1 N-Channel
Breite:
3.95 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
8.8 S
Abfallzeit:
3.6 ns
Produktart:
MOSFET
Anstiegszeit:
6.4 ns
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
7.1 ns
Typische Einschaltverzögerungszeit:
3.8 ns
Teil # Aliase:
SP001519440
Tags
AUIRF766, AUIRF76, AUIRF7, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
***ineon SCT
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperesr., MG-WDSON-4, RoHS
***ark
N Channel, MOSFET, 100V, 14.4A, DirectFET SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***ernational Rectifier
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes with optimized gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors su
***ineon
Benefits: Advanced process technology; Exceptionally small footprint and low profile; High power density; Low parasitic parameters; Dual-sided cooling; 175C operating temperature; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant and halogen free; Automotive qualified
***emi
N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ
***ure Electronics
Single N-Channel 100 V 98 mOhm 7.3 nC 2.3 W PowerTrench SMT Mosfet - MLP-3.3x3.3
***r Electronics
Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0437ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
***ical
Trans MOSFET N-CH Si 100V 14.4A 6-Pin Direct-FET SB T/R
***ineon SCT
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes., MG-WDSON-4, RoHS
***ment14 APAC
MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ernational Rectifier
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied
***ineon
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ure Electronics
Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***eco
IRFR3910TRPBF,MOSFET, 100V, 15 A, 115 MOHM, 29.3 NC QG, D-PA
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:79W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR3910TRPBF.
***roFlash
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
***emi
N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK
***ure Electronics
N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***icroelectronics
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
***ark
N CHANNEL MOSFET, 100V, 13A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Teil # Mfg. Beschreibung Aktie Preis
AUIRF7665S2TR
DISTI # V72:2272_13892226		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
RoHS: Compliant		4800
  • 3000:$0.4373
  • 1000:$0.4681
  • 500:$0.5980
  • 250:$0.6827
  • 100:$0.6898
  • 25:$0.8769
  • 10:$1.0049
  • 1:$1.1854
AUIRF7665S2TR
DISTI # V36:1790_13892226		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
RoHS: Compliant		0
  • 4800000:$0.3872
  • 2400000:$0.3875
  • 480000:$0.4125
  • 48000:$0.4568
  • 4800:$0.4642
AUIRF7665S2TR
DISTI # AUIRF7665S2TR-ND		Infineon Technologies AGMOSFET N-CH 100V 77A DIRECTFET2
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4800:$0.4642
AUIRF7665S2TR
DISTI # 30182021		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
RoHS: Compliant		4800
  • 3000:$0.4373
  • 1000:$0.4681
  • 500:$0.5980
  • 250:$0.6827
  • 100:$0.6898
  • 25:$0.8769
  • 16:$1.0049
AUIRF7665S2TR
DISTI # AUIRF7665S2TR		Infineon Technologies AGTrans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R - Tape and Reel (Alt: AUIRF7665S2TR)
RoHS: Compliant
Min Qty: 4800
Container: Reel		Americas - 0
  • 48000:$0.4219
  • 28800:$0.4299
  • 19200:$0.4439
  • 9600:$0.4609
  • 4800:$0.4779
AUIRF7665S2TR
DISTI # AUIRF7665S2TR		Infineon Technologies AGTrans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R - Bulk (Alt: AUIRF7665S2TR)
Min Qty: 807
Container: Bulk		Americas - 0
  • 8070:$0.4189
  • 4035:$0.4279
  • 2421:$0.4439
  • 1614:$0.4619
  • 807:$0.4809
AUIRF7665S2TR
DISTI # SP001519440		Infineon Technologies AGTrans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R (Alt: SP001519440)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Europe - 0
  • 48000:€0.3979
  • 28800:€0.4289
  • 19200:€0.4649
  • 9600:€0.5069
  • 4800:€0.6199
AUIRF7665S2TR
DISTI # 91Y4160		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, DIRECTFETSB,Transistor Polarity:N Channel,Continuous Drain Current Id:14.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,PowerRoHS Compliant: Yes3093
  • 1000:$0.5040
  • 500:$0.6380
  • 250:$0.6800
  • 100:$0.7220
  • 50:$0.7950
  • 25:$0.8680
  • 10:$0.9400
  • 1:$1.1000
AUIRF7665S2TR
DISTI # 70019355		Infineon Technologies AGGEN 10.7,AUTOMOTIVE DIRECTFET2,66.0MOHM,X0.95,100V
RoHS: Compliant		0
  • 4800:$1.1600
  • 9600:$1.1370
  • 24000:$1.1020
  • 48000:$1.0560
  • 120000:$0.9860
AUIRF7665S2TR1
DISTI # 70019356		Infineon Technologies AGGEN 10.7,AUTOMOTIVE DIRECTFET2,66.0MOHM,X0.95,100V
RoHS: Compliant		0
  • 1000:$0.6280
  • 2000:$0.6150
  • 5000:$0.5960
  • 10000:$0.5710
  • 25000:$0.5340
AUIRF7665S2TR
DISTI # 942-AUIRF7665S2TR		Infineon Technologies AGMOSFET 100V AUTO GRADE 1 N-CH HEXFET
RoHS: Compliant		4441
  • 1:$1.0900
  • 10:$0.9310
  • 100:$0.7150
  • 500:$0.6320
  • 1000:$0.4990
  • 2500:$0.4430
  • 4800:$0.4430
  • 9600:$0.4260
AUIRF7665S2TR1
DISTI # 942-AUIRF7665S2TR1		Infineon Technologies AGMOSFET 100V AUTO GRADE 1 N-CH HEXFET
RoHS: Compliant		0
    AUIRF7665S2TRInternational RectifierPower Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant    		4800
    • 1000:$0.4300
    • 500:$0.4600
    • 100:$0.4800
    • 25:$0.5000
    • 1:$0.5300
    AUIRF7665S2TR
    DISTI # 2579956    		Infineon Technologies AGMOSFET, AUTO, N-CH, 100V, DIRECTFETSB3093
    • 500:£0.5730
    • 250:£0.6100
    • 100:£0.6470
    • 25:£0.8440
    • 5:£0.9410
    AUIRF7665S2TR
    DISTI # 2579956    		Infineon Technologies AGMOSFET, AUTO, N-CH, 100V, DIRECTFETSB
    RoHS: Compliant    		3093
    • 1000:$0.7280
    • 500:$0.7700
    • 250:$0.8900
    • 100:$1.0600
    • 10:$1.2900
    • 1:$1.4900
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von AUIRF7665S2TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,09 $
    1,09 $
    10
    0,93 $
    9,31 $
    100
    0,72 $
    71,50 $
    500
    0,63 $
    316,00 $
    1000
    0,50 $
    499,00 $
    2500
    0,44 $
    1 107,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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