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CSD88599Q5DC

CSD88599Q5DC
Mfr. #:
CSD88599Q5DC
Beschreibung:
MOSFET 60V, Nch synchronous buck NexFET MOSFETG , SON5x6 dualCool PowerBlock, 40A 22-VSON-CLIP -55 to 150
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD88599Q5DC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD88599Q5DC Mehr Informationen CSD88599Q5DC Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-CLIP-22
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
1.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
43 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
12 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Serie:
CSD88599Q5DC
Marke:
Texas Instruments
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
9 ns
Gewichtseinheit:
0.003549 oz
Tags
CSD885, CSD88, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
60V, Nch synchronous buck NexFET MOSFET™, SON5x6 dualCool PowerBlock, 40A 22-VSON-CLIP -55 to 150
***et
Brushless DC Motor Controller 4.5V to 16V 22-Pin VSON-CLIP T/R
***ical
High Frequency Synchronous Power Module
***ark
60V Powerblock N Ch Mosfet
***i-Key
MOSFET 2 N-CH 60V 22-VSON-CLIP
***AS INSTRUMENT
The CSD88599Q5DC 60-V power block is an optimized design for high-current motor control applications, such as handheld, cordless garden and power tools. This device utilizes TI’s stacked die technology in order to minimize parasitic inductances while offering a complete half bridge in a space saving thermally enhanced DualCool™ 5-mm × 6-mm package. With an exposed metal top, this power block device allows for simple heat sink application to draw heat out through the top of the package and away from the PCB, for superior thermal performance at the higher currents demanded by many motor control applications.
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Power Block TI NexFET
NexFET Power Block ICs
OMO Electronic NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs which improves power density. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size, by up to 1/2, for the output filter (caps & inductor). They come with a unique ground pad lead frame and pinout which simplifies the customers layout and improves operating and thermal performance.
CSD88599Q5DC 60V Half-Bridge NexFET Power Block
OMO Electronic CSD88599Q5DC 60V Half-Bridge NexFET Power Block is an optimized design for high-current motor control applications. These applications include handheld, cordless garden and power tools. The CSD88599Q5DC utilizes TI’s patented stacked die technology in order to minimize parasitic inductances while offering a complete half bridge. The device comes in a space saving thermally enhanced DualCool™ 5mm × 6mm package. With an exposed metal top, this power block device allows for simple heat sink application to draw heat out through the top of the package and away from the PCB. This design allows for superior thermal performance at the higher currents demanded by many motor control applications.
Teil # Beschreibung Aktie Preis
CSD88599Q5DC
DISTI # 296-48289-1-ND		MOSFET 2 N-CH 60V 22-VSON-CLIP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2557In Stock
  • 1000:$3.1724
  • 500:$3.7616
  • 100:$4.6453
  • 10:$5.6650
  • 1:$6.3400
CSD88599Q5DC
DISTI # 296-48289-6-ND		MOSFET 2 N-CH 60V 22-VSON-CLIP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2557In Stock
  • 1000:$3.1724
  • 500:$3.7616
  • 100:$4.6453
  • 10:$5.6650
  • 1:$6.3400
CSD88599Q5DC
DISTI # 296-48289-2-ND		MOSFET 2 N-CH 60V 22-VSON-CLIP
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$3.0800
BOOSTXL-DRV8323RS
DISTI # 296-47067-ND		DRV8323RS LAUNCHPAD BOOSTERPACK
RoHS: Not compliant
Min Qty: 1
Container: Box		22In Stock
  • 1:$86.9000
BOOSTXL-DRV8323RH
DISTI # 296-47045-ND		DRV8323RH LAUNCHPAD BOOSTERPACK
RoHS: Not compliant
Min Qty: 1
Container: Box		12In Stock
  • 1:$86.9000
CSD88599Q5DCT
DISTI # 296-46924-2-ND		MOSFET 2 N-CH 60V 22-VSON-CLIP
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		On Order
  • 1250:$3.4832
  • 750:$3.7320
  • 500:$4.1301
  • 250:$4.6028
CSD88599Q5DCT
DISTI # 296-46924-1-ND		MOSFET 2 N-CH 60V 22-VSON-CLIP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$4.7409
  • 10:$5.7660
  • 1:$6.4100
CSD88599Q5DCT
DISTI # 296-46924-6-ND		MOSFET 2 N-CH 60V 22-VSON-CLIP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$4.7409
  • 10:$5.7660
  • 1:$6.4100
CSD88599Q5DC
DISTI # CSD88599Q5DC		60V Half-Bridge NexFET Power Block 30A Power loss 22-Pin VSON-CLIP T/R - Tape and Reel (Alt: CSD88599Q5DC)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$3.0900
  • 5000:$2.9900
  • 10000:$2.8900
  • 15000:$2.7900
  • 25000:$2.6900
CSD88599Q5DCT
DISTI # CSD88599Q5DCT		Half-Bridge NexFET Power Block 60V 22-Pin VSON-CLIP T/R - Tape and Reel (Alt: CSD88599Q5DCT)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 250:$4.3900
  • 500:$3.9900
  • 1000:$3.2900
  • 1500:$3.2900
  • 2500:$3.1900
CSD88599Q5DCT
DISTI # 22AC8037		MOSFET, DUAL N-CH, 60V, VSON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:-,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes0
    CSD88599Q5DC60 V Half-Bridge NexFET&#153,Power Block7401
    • 1000:$2.5000
    • 750:$2.5500
    • 500:$2.9500
    • 250:$3.3900
    • 100:$3.6300
    • 25:$4.0500
    • 10:$4.3300
    • 1:$4.8200
    CSD88599Q5DCT60 V Half-Bridge NexFET&#153,Power Block500
    • 1000:$2.8300
    • 750:$2.8900
    • 500:$3.3300
    • 250:$3.8300
    • 100:$4.1100
    • 25:$4.5800
    • 10:$4.9000
    • 1:$5.4500
    CSD88599Q5DC
    DISTI # 595-CSD88599Q5DC    		MOSFET 60 V Half-Bridge NexFET Power Block 22-VSON-CLIP -55 to 150
    RoHS: Compliant    		3740
    • 1:$5.8200
    • 10:$5.2400
    • 100:$4.2900
    • 250:$4.0300
    • 500:$3.6600
    • 1000:$3.0800
    • 2500:$2.9300
    CSD88599Q5DCT
    DISTI # 595-CSD88599Q5DCT    		MOSFET 60 V Half-Bridge NexFET Power Block 22-VSON-CLIP -55 to 150
    RoHS: Compliant    		0
    • 1:$6.5900
    • 10:$5.9200
    • 100:$4.8600
    • 250:$4.5600
    • 500:$4.1400
    • 1000:$3.4900
    CSD88599Q5DCT
    DISTI # 2766880    		MOSFET, DUAL N-CH, 60V, VSON
    RoHS: Compliant    		0
    • 100:$8.3200
    • 10:$10.1200
    • 1:$11.2400
    CSD88599Q5DC
    DISTI # C1S746204183656    		MOSFETs7
    • 1:$5.6500
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    OMO.#: OMO-DRV8323RHRGZR

    		 Gate Drivers 60V 3-PHASE GATE DRIVE
    STS8DN6LF6AG

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    OMO.#: OMO-STS8DN6LF6AG

    		 MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
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    OMO.#: OMO-TLV1117-33CDCYR

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von CSD88599Q5DC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,08 $
    4,08 $
    10
    3,67 $
    36,70 $
    100
    3,00 $
    300,00 $
    250
    2,82 $
    705,00 $
    500
    2,55 $
    1 275,00 $
    1000
    2,15 $
    2 150,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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