GS81302T11E-500

GS81302T11E-500
Mfr. #:
GS81302T11E-500
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8 or 1.5V 16M x 9 144M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS81302T11E-500 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS81302T11E-500 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
N
Speichergröße:
144 Mbit
Organisation:
16 M x 9
Maximale Taktfrequenz:
500 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
1.07 A
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
DDR-II
Serie:
GS81302T11E
Typ:
SigmaDDR-II+
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
10
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SigmaDDR-II+
Tags
GS81302T11E, GS81302T11, GS81302T1, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Single 1.8V 144M-Bit 16M x 9-Bit 0.45ns 165-Pin FBGA Tray
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Bild Teil # Beschreibung
GS81302Q07GE-318

Mfr.#: GS81302Q07GE-318

OMO.#: OMO-GS81302Q07GE-318

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302S36GE-300

Mfr.#: GS81302S36GE-300

OMO.#: OMO-GS81302S36GE-300

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302DT11GE-350

Mfr.#: GS81302DT11GE-350

OMO.#: OMO-GS81302DT11GE-350

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T37GE-400

Mfr.#: GS81302T37GE-400

OMO.#: OMO-GS81302T37GE-400

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302Q07E-200I

Mfr.#: GS81302Q07E-200I

OMO.#: OMO-GS81302Q07E-200I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T06GE-500

Mfr.#: GS81302T06GE-500

OMO.#: OMO-GS81302T06GE-500

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302D20E-500I

Mfr.#: GS81302D20E-500I

OMO.#: OMO-GS81302D20E-500I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T09E-300

Mfr.#: GS81302T09E-300

OMO.#: OMO-GS81302T09E-300

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302R08E-333

Mfr.#: GS81302R08E-333

OMO.#: OMO-GS81302R08E-333

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302S18E-375

Mfr.#: GS81302S18E-375

OMO.#: OMO-GS81302S18E-375

SRAM 1.8 or 1.5V 8M x 18 144M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von GS81302T11E-500 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
10
161,54 $
1 615,40 $
30
150,00 $
4 500,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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