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SI2307BDS-T1-GE3

SI2307BDS-T1-GE3
Mfr. #:
SI2307BDS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 30V 2.5A SOT23-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2307BDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2307BDS-T1-GE3 DatasheetSI2307BDS-T1-GE3 Datasheet (P4-P6)SI2307BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
***ical
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Teil # Mfg. Beschreibung Aktie Preis
SI2307BDS-T1-GE3
DISTI # 31975006		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1969
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7753In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7753In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2307BDS-T1-GE3
DISTI # V36:1790_09216788		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1559
  • 18000:€0.1669
  • 12000:€0.1809
  • 6000:€0.2109
  • 3000:€0.3089
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1919
  • 18000:$0.1969
  • 12000:$0.2029
  • 6000:$0.2109
  • 3000:$0.2179
SI2307BDS-T1-GE3
DISTI # 781-SI2307BDS-GE3		Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W 78mohm @ 10V
RoHS: Compliant		7294
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
SI2307BDS-T1-GE3Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W 78mohm @ 10V
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SI2307BDS-T1-E3

    Mfr.#: SI2307BDS-T1-E3

    OMO.#: OMO-SI2307BDS-T1-E3

    		 MOSFET 30V 3.2A 1.25W
    SI2307BDS

    Mfr.#: SI2307BDS

    OMO.#: OMO-SI2307BDS-1190

    		 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
    SI2307BDS-T1-GE3

    Mfr.#: SI2307BDS-T1-GE3

    OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY

    		 MOSFET P-CH 30V 2.5A SOT23-3
    SI2307BDS-T1-E3-CUT TAPE

    Mfr.#: SI2307BDS-T1-E3-CUT TAPE

    OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI2307BDS-T1-E3

    Mfr.#: SI2307BDS-T1-E3

    OMO.#: OMO-SI2307BDS-T1-E3-VISHAY

    		 Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von SI2307BDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,27 $
    0,27 $
    10
    0,25 $
    2,52 $
    100
    0,24 $
    23,92 $
    500
    0,23 $
    112,95 $
    1000
    0,21 $
    212,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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