FCP067N65S3

Mfr. #:: FCP067N65S3
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 650V 44A TO220
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FCP067N65S3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: FCP067N65S3 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: FCP06, FCP0, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP067N65S3 Beschreibung

***Semiconductor: N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220

***Components: In a Tube of 800, N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 ON Semiconductor FCP067N65S3

***ical: Trans MOSFET N-CH 650V 44A Tube

***et Europe: N-Channel SuperFET III MOSFET

***i-Key: SUPERFET3 650V 67 MOHM TO220 PKG

***ark: Mosfet, N-Ch, 650V, 44A, To-220-3L; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 44A, TO-220-3L; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)

***rchild Semiconductor: SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancedtechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency

***nell: MOSFET, CAN-N, 650V, 44A, TO-220-3L; Polarità Transistor:Canale N; Corrente Continua di Drain Id:44A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.059ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:312W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

FCP067N65S3 Mehr Informationen

Solutions for Energy Infrastructure: ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

SuperFET® III MOSFETs: ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FCP067N65S3 DISTI # V99:2348_16116286	ON Semiconductor	SUPERFET3 650V 67 MOHM TO220 P	651	1000:$2.4650 500:$2.8980 250:$3.2020 100:$3.4670 10:$4.0000 1:$5.1678
FCP067N65S3 DISTI # V36:1790_16116286	ON Semiconductor	SUPERFET3 650V 67 MOHM TO220 P	0	800000:$2.0840 400000:$2.0890 80000:$2.7360 8000:$4.0590 800:$4.2900
FCP067N65S3 DISTI # FCP067N65S3-ND	ON Semiconductor	MOSFET N-CH 650V 44A TO220 RoHS: Compliant Min Qty: 1 Container: Bulk	283In Stock	1000:$2.6303 500:$3.1187 100:$3.6636 10:$4.4710 1:$4.9800
FCP067N65S3 DISTI # 32444201	ON Semiconductor	SUPERFET3 650V 67 MOHM TO220 P	800	800:$2.3871
FCP067N65S3 DISTI # 33695905	ON Semiconductor	SUPERFET3 650V 67 MOHM TO220 P	651	3:$5.1678
FCP067N65S3 DISTI # FCP067N65S3	ON Semiconductor	N-Channel SuperFET III MOSFET (Alt: FCP067N65S3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.9900 500:€2.1900 50:€2.2900 100:€2.2900 25:€2.3900 10:€2.4900 1:€2.7900
FCP067N65S3 DISTI # FCP067N65S3	ON Semiconductor	N-Channel SuperFET III MOSFET - Rail/Tube (Alt: FCP067N65S3) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	3200:$2.1900 4800:$2.1900 8000:$2.1900 800:$2.2900 1600:$2.2900
FCP067N65S3 DISTI # 84Y5814	ON Semiconductor	MOSFET, N-CH, 650V, 44A, TO-220-3L,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes	796	500:$4.5700 250:$5.0000 100:$5.2100 50:$5.4300 25:$5.6600 10:$5.8800 1:$6.7600
FCP067N65S3 DISTI # 512-FCP067N65S3	ON Semiconductor	MOSFET 650V 44A N-Channel SuperFET MOSFET RoHS: Compliant	3564	1:$4.7300 10:$4.0200 100:$3.4800 250:$3.3100 500:$2.9700 1000:$2.5600
FCP067N65S3 DISTI # 1723424	ON Semiconductor	N-CHANNEL SUPERFET MOSFET 650V 44A TO220, TU	2345	1600:£2.3140 800:£2.4690
FCP067N65S3 DISTI # 2565216	ON Semiconductor	MOSFET, N-CH, 650V, 44A, TO-220-3L	796	500:£2.2600 250:£2.5200 100:£2.6600 10:£3.0700 1:£4.0200
FCP067N65S3 DISTI # 2565216	ON Semiconductor	MOSFET, N-CH, 650V, 44A, TO-220-3L RoHS: Compliant	796	1000:$4.2200 500:$4.9900 100:$6.1700 10:$7.5200 1:$8.4100
FCP067N65S3	ON Semiconductor		6300	1:$6.6300 100:$4.2400 500:$3.4900 1000:$3.2100

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von FCP067N65S3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~3,01 $~~; ~~3,01 $~~

10: ~~2,86 $~~; ~~28,63 $~~

100: ~~2,71 $~~; ~~271,22 $~~

500: ~~2,56 $~~; ~~1 280,75 $~~

1000: ~~2,41 $~~; ~~2 410,80 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FCP06 22
FCP0 94
FCP 519

FCP067N65S3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes