SSM6N67NU,LF

SSM6N67NU,LF
Mfr. #:
SSM6N67NU,LF
Hersteller:
Toshiba
Beschreibung:
MOSFET LowON Res MOSFET ID=4A VDSS=30V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SSM6N67NU,LF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM6N67NU,LF DatasheetSSM6N67NU,LF Datasheet (P4-P6)SSM6N67NU,LF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SSM6N67NU,LF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
UDFN-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
39.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
400 mV
Vgs - Gate-Source-Spannung:
12 V, - 8 V
Qg - Gate-Ladung:
3.2 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
SSM6N67NU
Marke:
Toshiba
Vorwärtstranskonduktanz - Min:
6 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
26 ns
Gewichtseinheit:
0.000300 oz
Tags
SSM6N6, SSM6N, SSM6, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
U-MOSVIII-H Low Voltage High Efficiency MOSFETs
Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. U-MOSVIII-H now includes new automotive-qualified MOSFETs in a small package.
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von SSM6N67NU,LF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,55 $
0,55 $
10
0,36 $
3,60 $
100
0,20 $
20,10 $
1000
0,15 $
146,00 $
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