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FDN357N

FDN357N
Mfr. #:
FDN357N
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 1.9A SSOT3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDN357N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
FETs - Einzeln
Serie
-
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
FDN357N_NL
Gewichtseinheit
0.001058 oz
Montageart
SMD/SMT
Paket-Koffer
TO-236-3, SC-59, SOT-23-3
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
SuperSOT-3
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
460mW
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
235pF @ 10V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
1.9A (Ta)
Rds-On-Max-Id-Vgs
60 mOhm @ 2.2A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Lade-Qg-Vgs
5.9nC @ 5V
Pd-Verlustleistung
500 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
1.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
81 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
12 ns
Typische-Einschaltverzögerungszeit
5 ns
Vorwärts-Transkonduktanz-Min
5 S
Kanal-Modus
Erweiterung
Tags
FDN357N, FDN357, FDN35, FDN3, FDN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN357N
***Semiconductor
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
***ical
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor
***p One Stop Japan
Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R
***ark
30V N-Fet 60 Mo Ssot3 Rohs Compliant: Yes
*** Source Electronics
MOSFET N-CH 30V 1.9A SSOT3
***trelec
MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW
***eco
FDN357N,003, PLASTIC MOLDED, S
***ser
MOSFETs SSOT-3 N-CH 30V
***et
30V N-CH. FET, 60 MO, SSOT3
***nell
MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.08ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:357; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:3.05mm; Width, Tape:8mm
***rchild Semiconductor
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
FDN357N
DISTI # V72:2272_06300784		ON Semiconductor30V N-CH. FET, 60 MO, SSOT3121
  • 100:$0.1656
  • 25:$0.3474
  • 10:$0.3528
  • 1:$0.4966
FDN357N
DISTI # FDN357NCT-ND		ON SemiconductorMOSFET N-CH 30V 1.9A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		25169In Stock
  • 1000:$0.1707
  • 500:$0.2276
  • 100:$0.3319
  • 10:$0.4840
  • 1:$0.6200
FDN357N
DISTI # FDN357NDKR-ND		ON SemiconductorMOSFET N-CH 30V 1.9A SSOT3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		25169In Stock
  • 1000:$0.1707
  • 500:$0.2276
  • 100:$0.3319
  • 10:$0.4840
  • 1:$0.6200
FDN357N
DISTI # FDN357NTR-ND		ON SemiconductorMOSFET N-CH 30V 1.9A SSOT3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.1519
FDN357N
DISTI # 30275702		ON Semiconductor30V N-CH. FET, 60 MO, SSOT3121
  • 100:$0.1656
  • 62:$0.3474
FDN357N
DISTI # FDN357N		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN357N)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0849
  • 6000:$0.0839
  • 12000:$0.0829
  • 18000:$0.0819
  • 30000:$0.0799
FDN357N
DISTI # FDN357N		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    FDN357N
    DISTI # FDN357N    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.1439
    • 6000:€0.1119
    • 12000:€0.0909
    • 18000:€0.0769
    • 30000:€0.0719
    FDN357N
    DISTI # FDN357N    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN357N)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 0
    • 1:$0.3559
    • 30:$0.3119
    • 75:$0.2199
    • 150:$0.1689
    • 375:$0.1599
    • 750:$0.1579
    • 1500:$0.1579
    FDN357N
    DISTI # 67R2063    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: 67R2063)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 1:$0.1260
    • 12000:$0.1220
    • 18000:$0.1170
    • 30000:$0.1120
    FDN357N
    DISTI # 58K8842    		ON SemiconductorTrans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8842)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.5390
    • 25:$0.4080
    • 50:$0.3150
    • 100:$0.2210
    • 250:$0.2020
    • 500:$0.1850
    • 1000:$0.1660
    FDN357N
    DISTI # 58K8842    		ON SemiconductorN CHANNEL MOSFET, 30V, 1.9A, SUPER SOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes4802
    • 1:$0.5390
    • 25:$0.4080
    • 50:$0.3150
    • 100:$0.2210
    • 250:$0.2020
    • 500:$0.1850
    • 1000:$0.1660
    FDN357N
    DISTI # 04X6265    		ON SemiconductorMOSFET, N CH, 30V, 1.9A, SUPERSOT,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes54000
    • 1:$0.1760
    • 3000:$0.1660
    • 6000:$0.1440
    • 12000:$0.1290
    • 18000:$0.1180
    • 30000:$0.1080
    FDN357NON SemiconductorN-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor
    RoHS: Compliant    		3000Reel
    • 3000:$0.1120
    • 6000:$0.1060
    • 9000:$0.1050
    FDN357NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		416409
    • 1000:$0.1600
    • 100:$0.1700
    • 500:$0.1700
    • 25:$0.1800
    • 1:$0.1900
    FDN357N
    DISTI # 512-FDN357N    		ON SemiconductorMOSFET SSOT-3 N-CH 30V
    RoHS: Compliant    		4010
    • 1:$0.4900
    • 10:$0.3710
    • 100:$0.2010
    • 1000:$0.1510
    • 3000:$0.1300
    • 9000:$0.1220
    • 24000:$0.1120
    FDN357N_Q
    DISTI # 512-FDN357N_Q    		ON SemiconductorMOSFET SSOT-3 N-CH 30V
    RoHS: Not compliant    		0
      FDN357NFairchild Semiconductor Corporation 1065
        FDN357NFairchild Semiconductor Corporation 14998
          FDN357NFairchild Semiconductor Corporation 4198
            FDN357N
            DISTI # 6710441            		ON SemiconductorMOSFET N-CHANNEL 30V 1.9A SUPERSOT3, PK315
            • 5:£0.5200
            • 25:£0.2620
            • 100:£0.1420
            • 250:£0.1300
            • 500:£0.1200
            FDN357N
            DISTI # 6710441P            		ON SemiconductorMOSFET N-CHANNEL 30V 1.9A SUPERSOT3, RL1370
            • 25:£0.2620
            • 100:£0.1420
            • 250:£0.1300
            • 500:£0.1200
            FDN357NFairchild Semiconductor Corporation1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET3005
            • 1264:$0.1232
            • 254:$0.1584
            • 1:$0.3520
            FDN357NON SemiconductorN-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SUPERSOT-3
            RoHS: Compliant            		Europe - 3000
              FDN357NFairchild Semiconductor CorporationINSTOCK3000
                FDN357N INSTOCK320
                  FDN357N
                  DISTI # 2323189                  		ON SemiconductorMOSFET, N CH, 30V, 1.9A, SUPERSOT
                  RoHS: Compliant                  		54000
                  • 3000:£0.1110
                  • 9000:£0.0954
                  FDN357N
                  DISTI # 9845364                  		ON SemiconductorMOSFET, N, SOT-23
                  RoHS: Compliant                  		26214
                  • 1:$0.7750
                  • 10:$0.5870
                  • 100:$0.3190
                  • 1000:$0.2400
                  • 3000:$0.2060
                  • 9000:$0.1940
                  • 24000:$0.1780
                  FDN357N
                  DISTI # 2323189                  		ON SemiconductorMOSFET, N CH, 30V, 1.9A, SUPERSOT
                  RoHS: Compliant                  		66000
                  • 3000:$0.2060
                  FDN357N
                  DISTI # 1562548                  		ON SemiconductorMOSFET, N SOT-23 REEL 3K
                  RoHS: Compliant                  		0
                  • 1:$748.6700
                  • 3:$741.1000
                  FDN357N
                  DISTI # 9845364RL                  		ON SemiconductorMOSFET, N, SOT-23
                  RoHS: Compliant                  		0
                  • 1:$0.7750
                  • 10:$0.5870
                  • 100:$0.3190
                  • 1000:$0.2400
                  • 3000:$0.2060
                  • 9000:$0.1940
                  • 24000:$0.1780
                  FDN357N
                  DISTI # XSFP00000026676                  		Fairchild Semiconductor Corporation 
                  RoHS: Compliant                  		16152
                  • 3000:$0.1880
                  • 16152:$0.1762
                  Bild Teil # Beschreibung
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                  Mfr.#: FDN143

                  OMO.#: OMO-FDN143-1190

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                  Mfr.#: FDN335A-NL

                  OMO.#: OMO-FDN335A-NL-1190

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                  FDN335N_Q

                  Mfr.#: FDN335N_Q

                  OMO.#: OMO-FDN335N-Q-1190

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                  Mfr.#: FDN335P

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                  FDN338P SOT23-338

                  Mfr.#: FDN338P SOT23-338

                  OMO.#: OMO-FDN338P-SOT23-338-1190

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                  FDN339AN-NL , 1N5246B

                  Mfr.#: FDN339AN-NL , 1N5246B

                  OMO.#: OMO-FDN339AN-NL-1N5246B-1190

                  		 Neu und Original
                  FDN537N

                  Mfr.#: FDN537N

                  OMO.#: OMO-FDN537N-ON-SEMICONDUCTOR

                  		 MOSFET N-CH 30V 6.5A SSOT-3
                  FDN6030L-NL

                  Mfr.#: FDN6030L-NL

                  OMO.#: OMO-FDN6030L-NL-1190

                  		 Neu und Original
                  FDN336P-CUT TAPE

                  Mfr.#: FDN336P-CUT TAPE

                  OMO.#: OMO-FDN336P-CUT-TAPE-1190

                  		 Neu und Original
                  Verfügbarkeit
                  Aktie:
                  Available
                  Auf Bestellung:
                  2500
                  Menge eingeben:
                  Der aktuelle Preis von FDN357N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                  Referenzpreis (USD)
                  Menge
                  Stückpreis
                  ext. Preis
                  1
                  0,12 $
                  0,12 $
                  10
                  0,11 $
                  1,13 $
                  100
                  0,11 $
                  10,68 $
                  500
                  0,10 $
                  50,45 $
                  1000
                  0,09 $
                  94,90 $
                  Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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