OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXXK160N65B4

IXXK160N65B4
Mfr. #:
IXXK160N65B4
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXK160N65B4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXK160N65B4 DatasheetIXXK160N65B4 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXXK160N65B4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-264-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.54 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
310 A
Pd - Verlustleistung:
940 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXXK160N65
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
160 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
25
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
0.373904 oz
Tags
IXXK1, IXXK, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 310A 940W TO264
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXK160N65B4
DISTI # IXXK160N65B4-ND		IXYS CorporationIGBT 650V 310A 940W TO264
RoHS: Compliant
Min Qty: 1
Container: Tube		29In Stock
  • 500:$9.7136
  • 250:$10.3834
  • 100:$11.3883
  • 25:$12.3932
  • 10:$13.3980
  • 1:$14.7400
IXXK160N65B4
DISTI # 747-IXXK160N65B4		IXYS CorporationIGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
RoHS: Compliant		34
  • 1:$14.0400
  • 10:$12.7600
  • 25:$11.8000
  • 50:$11.1200
  • 100:$10.8500
  • 250:$9.8900
  • 500:$9.2500
Bild Teil # Beschreibung
LMV331M5X/NOPB

Mfr.#: LMV331M5X/NOPB

OMO.#: OMO-LMV331M5X-NOPB

 Analog Comparators SINGLE GEN PURP, LOW VLTG, TINY PK CMPRTR
PCA82C250T/YM,118

Mfr.#: PCA82C250T/YM,118

OMO.#: OMO-PCA82C250T-YM-118

 CAN Interface IC CAN CTRLR 170uA 5V
UCC28070DWR

Mfr.#: UCC28070DWR

OMO.#: OMO-UCC28070DWR

 Power Factor Correction - PFC 2-Phase Interleaved CCM PFC Controller
SM8A27HE3/2D

Mfr.#: SM8A27HE3/2D

OMO.#: OMO-SM8A27HE3-2D

 TVS Diodes / ESD Suppressors 8.0W 27 Volt Unidir AEC-Q101 Qualified
IPD60R280CFD7ATMA1

Mfr.#: IPD60R280CFD7ATMA1

OMO.#: OMO-IPD60R280CFD7ATMA1

 MOSFET LOW POWER_NEW
STW28N65M2

Mfr.#: STW28N65M2

OMO.#: OMO-STW28N65M2

 MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
HHV-50JT-52-33M

Mfr.#: HHV-50JT-52-33M

OMO.#: OMO-HHV-50JT-52-33M

 Metal Film Resistors - Through Hole 1/2W 33M Ohm 5%
SM8A27HE3/2D

Mfr.#: SM8A27HE3/2D

OMO.#: OMO-SM8A27HE3-2D-VISHAY

 TVS Diodes - Transient Voltage Suppressors 8.0W 27 Volt Unidi
LMV331M5X/NOPB

Mfr.#: LMV331M5X/NOPB

OMO.#: OMO-LMV331M5X-NOPB-TEXAS-INSTRUMENTS

 Analog Comparators SINGLE GEN PURP, LOW VLTG, TINY PK CMPRTR
IPD60R280CFD7ATMA1

Mfr.#: IPD60R280CFD7ATMA1

OMO.#: OMO-IPD60R280CFD7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH TO252-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von IXXK160N65B4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,04 $
14,04 $
10
12,76 $
127,60 $
25
11,80 $
295,00 $
50
11,12 $
556,00 $
100
10,85 $
1 085,00 $
250
9,89 $
2 472,50 $
500
9,25 $
4 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top