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FQA27N25

FQA27N25
Mfr. #:
FQA27N25
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 250V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQA27N25 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PN-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
27 A
Rds On - Drain-Source-Widerstand:
110 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
210 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
20.1 mm
Länge:
16.2 mm
Serie:
FQA27N25
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
120 ns
Produktart:
MOSFET
Anstiegszeit:
270 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
32 ns
Teil # Aliase:
FQA27N25_NL
Gewichtseinheit:
0.225789 oz
Tags
FQA2, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 250 V, 2.7 A, 110 mΩ, TO-3P
***ure Electronics
N-Channel 250 V 0.11 Ohm Through Hole Mosfet - TO-3PN
***et
Trans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Rail
***r Electronics
Power Field-Effect Transistor, 27A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Qf 250V 110Mohm To3Pn Rohs Compliant: Yes
***nell
MOSFET, N-CH, 250V, 27A, 150DEG C, 210W;
***enic
250V 27A 83m´Î@10V13.5A 210W 5V@250uA 49pF@25V N Channel 1.9nF@25V 50nC@10V -55¡Í~+150¡Í@(Tj) TO-3 MOSFETs ROHS
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220
***Yang
Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***ark
250V, 33A, 0.094 ohm, NCH MOSFET - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-3P
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***el Electronic
Non-Volatile 64Kb (8K x 8) I2C 4.5V ~ 5.5V SOIC-8_150mil FRAM RoHS
***i-Key
MOSFET N-CH 250V 33A I2PAK
*** Electronics
N-CHANNEL POWER MOSFET
***eco
Transistor MOSFET N Channel 250 Volt 25.5 Amp 3-Pin 3+ Tab TO-220 Rail
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 25.5 A, 110 mΩ, TO-220
***et
Trans MOSFET N-CH 250V 25.5A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
Single N-Channel 250 V 180 W 65 nC DMOS Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 250V 34A TO-3P
*** Services
CoC and 2-years warranty / RFQ for pricing
***ser
MOSFETs 250V N-Channel QFET
***el Nordic
Contact for details
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Teil # Mfg. Beschreibung Aktie Preis
FQA27N25
DISTI # V99:2348_06358985		ON SemiconductorQF 250V 110MOHM TO3PN450
  • 1350:$1.4430
  • 900:$1.4889
  • 450:$1.7730
  • 10:$1.9710
  • 1:$2.5110
FQA27N25
DISTI # FQA27N25-ND		ON SemiconductorMOSFET N-CH 250V 27A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube		611In Stock
  • 1350:$1.7253
  • 900:$1.8485
  • 450:$2.2798
  • 10:$3.0810
  • 1:$3.4500
FQA27N25
DISTI # 26637299		ON SemiconductorQF 250V 110MOHM TO3PN13050
  • 450:$1.2363
FQA27N25
DISTI # 27123118		ON SemiconductorQF 250V 110MOHM TO3PN450
  • 450:$1.7730
  • 10:$1.9710
  • 5:$2.5110
FQA27N25
DISTI # FQA27N25		ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA27N25)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 77
  • 450:$1.1900
  • 900:$1.1900
  • 1800:$1.1900
  • 2700:$1.1900
  • 4500:$1.1900
FQA27N25
DISTI # FQA27N25		ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Rail (Alt: FQA27N25)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.3900
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.1900
  • 1000:€1.1900
FQA27N25
DISTI # 20C4398		ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Rail - Bulk (Alt: 20C4398)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$2.7700
  • 10:$2.3700
  • 25:$2.2200
  • 50:$2.0700
  • 100:$1.9200
  • 250:$1.8100
  • 500:$1.6900
FQA27N25.
DISTI # 81AC8723		ON SemiconductorQF 250V 110MOHM TO3PN77
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.5800
  • 1000:$1.1900
  • 2500:$1.1500
  • 5000:$1.1200
FQA27N25
DISTI # 512-FQA27N25		ON SemiconductorMOSFET 250V N-Channel QFET
RoHS: Compliant		166
  • 1:$2.9700
  • 10:$2.5300
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.5700
  • 2500:$1.4900
  • 5000:$1.4400
FQA27N25ON SemiconductorN-Channel 250 V 0.11 Ohm Through Hole Mosfet - TO-3PN
RoHS: Compliant		3840Tube
  • 10:$1.9300
  • 75:$1.6900
  • 400:$1.4300
FQA27N25Fairchild Semiconductor CorporationPower Field-Effect Transistor, 27A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		35120
  • 1000:$1.7200
  • 500:$1.8100
  • 100:$1.8900
  • 25:$1.9700
  • 1:$2.1200
FQA27N25Fairchild Semiconductor Corporation27A, 250V, 0.11OHM, N-CHANNEL, SI, POWER, MOSFET35
    FQA27N25FAIRCHHILD27A, 250V, 0.11OHM, N-CHANNEL, SI, POWER, MOSFET370
    • 105:$2.2200
    • 29:$2.4000
    • 1:$3.6000
    FQA27N25
    DISTI # C1S541901402404    		ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Tube
    RoHS: Compliant    		450
    • 450:$1.7730
    • 10:$1.9710
    • 1:$2.5110
    FQA27N25
    DISTI # XSFP00000002001    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		3190
    • 60:$3.8600
    • 3190:$3.5100
    FQA27N25
    DISTI # 2838991    		ON SemiconductorMOSFET, N-CH, 250V, 27A, TO-3PN-3
    RoHS: Compliant    		0
    • 1:£2.4300
    • 10:£2.0800
    • 25:£1.9500
    • 50:£1.8200
    • 100:£1.6900
    FQA27N25
    DISTI # 2838991    		ON SemiconductorMOSFET, N-CH, 250V, 27A, TO-3PN-3
    RoHS: Compliant    		0
    • 1:$5.4600
    • 10:$4.8800
    • 450:$3.6100
    • 900:$2.9300
    • 1350:$2.7300
    Bild Teil # Beschreibung
    OPA2192IDR

    Mfr.#: OPA2192IDR

    OMO.#: OMO-OPA2192IDR

    		 Precision Amplifiers 36V Precision Current Op Amp
    BSS84Q-7-F

    Mfr.#: BSS84Q-7-F

    OMO.#: OMO-BSS84Q-7-F

    		 MOSFET BSS Family
    FQA9P25

    Mfr.#: FQA9P25

    OMO.#: OMO-FQA9P25

    		 MOSFET 250V P-Channel QFET
    OPA2192IDR

    Mfr.#: OPA2192IDR

    OMO.#: OMO-OPA2192IDR-TEXAS-INSTRUMENTS

    		 Precision Amplifiers High Voltage, Rail-to-Rail Input/Output,Precision Op Amps, E-Trim(TM) Series 8-SOIC -40 to 125
    FTR-MYAA024D

    Mfr.#: FTR-MYAA024D

    OMO.#: OMO-FTR-MYAA024D-640

    		 General Purpose Relays POWER
    FQA9P25

    Mfr.#: FQA9P25

    OMO.#: OMO-FQA9P25-ON-SEMICONDUCTOR

    		 MOSFET P-CH 250V 10.5A TO-3P
    BSS84Q-7-F

    Mfr.#: BSS84Q-7-F

    OMO.#: OMO-BSS84Q-7-F-1190

    		 Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS84Q-7-F)
    Verfügbarkeit
    Aktie:
    160
    Auf Bestellung:
    2143
    Menge eingeben:
    Der aktuelle Preis von FQA27N25 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,81 $
    2,81 $
    10
    2,39 $
    23,90 $
    100
    2,07 $
    207,00 $
    250
    1,96 $
    490,00 $
    500
    1,76 $
    880,00 $
    1000
    1,49 $
    1 490,00 $
    2500
    1,41 $
    3 525,00 $
    5000
    1,36 $
    6 800,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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