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SISF02DN-T1-GE3

SISF02DN-T1-GE3
Mfr. #:
SISF02DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET Common Drain Dual N-Channel 25 V (S1-S2) MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISF02DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISF02DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
2.15 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
51 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerPAK
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
105 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
17 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
24 ns
Tags
SISF, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
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Verfügbarkeit
Aktie:
47
Auf Bestellung:
2030
Menge eingeben:
Der aktuelle Preis von SISF02DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,57 $
1,57 $
10
1,29 $
12,90 $
100
0,99 $
99,30 $
500
0,85 $
427,00 $
1000
0,67 $
674,00 $
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