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IRLR3717PBF

IRLR3717PBF
Mfr. #:
IRLR3717PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 20V 120A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLR3717PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR3717PBF DatasheetIRLR3717PBF Datasheet (P4-P6)IRLR3717PBF Datasheet (P7-P9)IRLR3717PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
89 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
16 ns
Anstiegszeit
14 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
120 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1.55 V to 2.45 V
Rds-On-Drain-Source-Widerstand
5.7 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
5.8 ns
Typische-Einschaltverzögerungszeit
14 ns
Qg-Gate-Ladung
21 nC
Vorwärts-Transkonduktanz-Min
49 S
Kanal-Modus
Erweiterung
Tags
IRLR3717, IRLR371, IRLR37, IRLR3, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 20V 120A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 20V 120A DPAK
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ure Electronics
Single N-Channel 20 V 4.2 mOhm 21 nC HEXFET® Power Mosfet - DPAK
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.004Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:89W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:120A; Package / Case:DPAK; Power Dissipation Pd:89W; Power Dissipation Pd:89W; Pulse Current Idm:460A; SMD Marking:IRLR3717; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRLR3717PBF
DISTI # 22523180		Infineon Technologies AGTrans MOSFET N-CH 20V 120A 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant		2775
  • 2500:$0.3839
  • 1000:$0.3951
  • 500:$0.4071
  • 250:$0.4198
  • 100:$0.4334
  • 27:$0.4478
IRLR3717PBF
DISTI # IRLR3717PBF-ND		Infineon Technologies AGMOSFET N-CH 20V 120A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    IRLR3717PBF
    DISTI # 70017974    		Infineon Technologies AGMOSFET,N Ch.,20V,120A,4.2 MOHM,21 NC QG,D-PAK,Pb-Free
    RoHS: Compliant    		0
    • 825:$1.1800
    IRLR3717PBF
    DISTI # 942-IRLR3717PBF    		Infineon Technologies AGMOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC
    RoHS: Compliant    		1448
    • 1:$1.3200
    • 10:$1.1300
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6010
    IRLR3717PBF
    DISTI # 6887226    		Infineon Technologies AGMOSFET N-CHANNEL 20V 120A HEXFET DPAK, PK1120
    • 5:£0.3300
    • 25:£0.3100
    IRLR3717PBFInternational Rectifier 48
    • 48:$1.4040
    • 14:$1.5955
    • 1:$2.5528
    IRLR3717PBF
    DISTI # IRLR3717PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,20V,120A,89W,DPAK326
    • 1:$0.8000
    • 3:$0.7200
    • 10:$0.5900
    • 75:$0.5200
    IRLR3717PBF
    DISTI # IRLR3717PBF    		Infineon Technologies AGN-LogL 20V 120A 89W 0,004R TO252AA
    RoHS: Compliant    		75
    • 75:€0.4495
    • 150:€0.3895
    • 300:€0.3595
    • 600:€0.3460
    IRLR3717TRPBF
    DISTI # IRLR3717PBF-GURT    		Infineon Technologies AGN-LogL 20V 120A 89W 0,004R TO252AA
    RoHS: Compliant    		0
    • 50:€0.3930
    • 100:€0.3530
    • 500:€0.3330
    • 3000:€0.3205
    IRLR3717PBF
    DISTI # 1013417    		Infineon Technologies AGMOSFET, N, LOGIC, D-PAK
    RoHS: Compliant    		0
    • 1:$2.0900
    • 10:$1.7900
    • 100:$1.3700
    • 500:$1.2100
    • 1000:$0.9520
    • 3000:$0.8440
    Bild Teil # Beschreibung
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    		 MOSFET N-CH 30V 55A DPAK
    IRLR3715

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    OMO.#: OMO-IRLR3715-INFINEON-TECHNOLOGIES

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    IRLR3715ZCPBF

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    OMO.#: OMO-IRLR3715ZCPBF-1190

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    IRLR3802TRLPBF

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    OMO.#: OMO-IRLR3802TRLPBF-INFINEON-TECHNOLOGIES

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    IRLR3705ZTRPBF

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    		 Darlington Transistors MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl
    IRLR3717TRRPBF

    Mfr.#: IRLR3717TRRPBF

    OMO.#: OMO-IRLR3717TRRPBF-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IRLR3717PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,56 $
    0,56 $
    10
    0,53 $
    5,28 $
    100
    0,50 $
    50,06 $
    500
    0,47 $
    236,40 $
    1000
    0,44 $
    445,00 $
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