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NJVMJD45H11G

NJVMJD45H11G
Mfr. #:
NJVMJD45H11G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP DPAK PNP 8A 80V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NJVMJD45H11G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NJVMJD45H11G DatasheetNJVMJD45H11G Datasheet (P4-P6)NJVMJD45H11G Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
NJVMJD45H11G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
DPAK-3
Polarität des Transistors:
PNP
Kollektor- Emitterspannung VCEO Max:
80 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
1 V
Maximaler DC-Kollektorstrom:
8 A
Bandbreitenprodukt fT gewinnen:
90 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
MJD45H11
Verpackung:
Rohr
Marke:
ON Semiconductor
Pd - Verlustleistung:
20 W
Produktart:
BJTs - Bipolartransistoren
Qualifikation:
AEC-Q101
Werkspackungsmenge:
75
Unterkategorie:
Transistoren
Gewichtseinheit:
0.012346 oz
Tags
NJVMJD45, NJVMJD4, NJVMJD, NJVM, NJV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
8 A, 80 V PNP Power Bipolar Junction Transistor
***ical
Trans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube
***nell
TRANSISTOR, BIPOLAR, PNP, 80V, 8A, TO252;
***ark
TRANSISTOR, BIPOLAR, PNP, 80V, 8A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; DC Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
NJVMJD45H11G Bipolar Junction Transistor
ON Semiconductor NJVMJD45H11G Bipolar Junction Transistor (BJT) is a fast switching device with low collector-emitter saturation voltage. The electrical characteristics of NJVMJD45H11G transistor include: 8A current, 80V voltage, and 20W power. This transistor is electrically similar to D44H/D45H series. The NJVMJD45H11G is available in a straight lead version in plastic sleeves along with complementary pairs to simplify designs. This transistor is used for general purpose power and switching devices. The applications include switching regulators, converters, and power amplifiers.Learn more
Teil # Mfg. Beschreibung Aktie Preis
NJVMJD45H11G
DISTI # 26621491		ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant		1275
  • 1275:$0.3920
NJVMJD45H11G
DISTI # NJVMJD45H11GOS-ND		ON SemiconductorTRANS PNP 50V 8A DPAK-4
RoHS: Compliant
Min Qty: 1
Container: Tube		705In Stock
  • 5025:$0.3508
  • 2550:$0.3768
  • 525:$0.5198
  • 150:$0.6575
  • 75:$0.8056
  • 10:$0.8580
  • 1:$0.9700
NJVMJD45H11G
DISTI # V36:1790_07291333		ON SemiconductorTrans GP BJT NPN 80V 8A Automotive 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant		0
    NJVMJD45H11G
    DISTI # NJVMJD45H11G    		ON SemiconductorTrans GP BJT PNP 80V 8A 3-Pin DPAK Rail - Rail/Tube (Alt: NJVMJD45H11G)
    RoHS: Compliant
    Min Qty: 1275
    Container: Tube    		Americas - 0
    • 12750:$0.3049
    • 6375:$0.3129
    • 3825:$0.3169
    • 2550:$0.3209
    • 1275:$0.3229
    NJVMJD45H11G
    DISTI # 863-NJVMJD45H11G    		ON SemiconductorBipolar Transistors - BJT BIP DPAK PNP 8A 80V
    RoHS: Compliant    		965
    • 1:$0.9300
    • 10:$0.7680
    • 100:$0.4950
    • 1000:$0.3960
    • 2500:$0.3350
    • 10000:$0.3220
    • 25000:$0.3100
    NJVMJD45H11GON Semiconductor80V,8A,PNP Bipolar Power Transistor45
    • 1:$0.6400
    • 100:$0.4800
    • 500:$0.4200
    • 1000:$0.3900
    Bild Teil # Beschreibung
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    OMO.#: OMO-HCPL-316J-000E-BROADCOM

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    OMO.#: OMO-STPS2H100ZF-STMICROELECTRONICS

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    RN73H1JTTD7871B25

    Mfr.#: RN73H1JTTD7871B25

    OMO.#: OMO-RN73H1JTTD7871B25-1092

    		 Thin Film Resistors - SMD 7.87kOhm,0603,0.1%,2 5ppm,100mW,75V
    TNPW060324K0BEEA

    Mfr.#: TNPW060324K0BEEA

    OMO.#: OMO-TNPW060324K0BEEA-VISHAY-DALE

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    		 Headers & Wire Housings CONNECTOR, BERGSTIK II/S
    Verfügbarkeit
    Aktie:
    262
    Auf Bestellung:
    2245
    Menge eingeben:
    Der aktuelle Preis von NJVMJD45H11G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,93 $
    0,93 $
    10
    0,77 $
    7,68 $
    100
    0,50 $
    49,50 $
    1000
    0,40 $
    396,00 $
    2500
    0,34 $
    837,50 $
    10000
    0,32 $
    3 220,00 $
    25000
    0,31 $
    7 750,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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