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SI4922BDY-T1-GE3

SI4922BDY-T1-GE3
Mfr. #:
SI4922BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 8.0A 3.1W 16mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4922BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4922BDY-T1-GE3 DatasheetSI4922BDY-T1-GE3 Datasheet (P4-P6)SI4922BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4922BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4922BDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4922B, SI4922, SI492, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel
***
30V N-CHANNEL DUAL
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, 8A; Transist; DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0135ohm; Rds(on) Test Voltage Vgs:2.5V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4922BDY-T1-GE3
DISTI # SI4922BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.7871
SI4922BDY-T1-GE3
DISTI # SI4922BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2500In Stock
  • 1000:$0.8707
  • 500:$1.0509
  • 100:$1.3511
  • 10:$1.6810
  • 1:$1.8600
SI4922BDY-T1-GE3
DISTI # SI4922BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2500In Stock
  • 1000:$0.8707
  • 500:$1.0509
  • 100:$1.3511
  • 10:$1.6810
  • 1:$1.8600
SI4922BDY-T1-GE3
DISTI # SI4922BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4922BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7549
  • 5000:$0.7319
  • 10000:$0.7029
  • 15000:$0.6829
  • 25000:$0.6649
SI4922BDY-T1-GE3
DISTI # 781-SI4922BDY-GE3		Vishay IntertechnologiesMOSFET 30V 8.0A 3.1W 16mohm @ 10V
RoHS: Compliant		2500
  • 1:$1.6200
  • 10:$1.3400
  • 100:$1.0400
  • 500:$0.9090
  • 1000:$0.7530
  • 2500:$0.7010
SI4922BDY-T1-GE3Vishay IntertechnologiesMOSFET 30V 8.0A 3.1W 16mohm @ 10VAmericas -
    Bild Teil # Beschreibung
    SI4922BDY-T1-E3

    Mfr.#: SI4922BDY-T1-E3

    OMO.#: OMO-SI4922BDY-T1-E3

    		 MOSFET DUAL N-CH 30V(D-S)
    SI4922BDY-T1-GE3

    Mfr.#: SI4922BDY-T1-GE3

    OMO.#: OMO-SI4922BDY-T1-GE3

    		 MOSFET 30V 8.0A 3.1W 16mohm @ 10V
    SI4922BDY-T1-GE3

    Mfr.#: SI4922BDY-T1-GE3

    OMO.#: OMO-SI4922BDY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 30V 8.0A 3.1W 16mohm @ 10V
    SI4922BDY-T1-E3-CUT TAPE

    Mfr.#: SI4922BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4922BDY-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI4922BDY-T1-E3

    Mfr.#: SI4922BDY-T1-E3

    OMO.#: OMO-SI4922BDY-T1-E3-VISHAY

    		 MOSFET 2N-CH 30V 8A 8-SOIC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von SI4922BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,64 $
    1,64 $
    10
    1,36 $
    13,60 $
    100
    1,06 $
    106,00 $
    500
    0,93 $
    463,50 $
    1000
    0,77 $
    768,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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