IPB017N10N5ATMA1

Mfr. #:: IPB017N10N5ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB017N10N5ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPB017N10N5ATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Infineon-Technologien

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Verpackung: Spule

Teil-Aliasnamen: IPB017N10N5 SP001227028

Gewichtseinheit: 0.056438 oz

Montageart: SMD/SMT

Paket-Koffer: TO-263-7

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 375 W

Maximale-Betriebstemperatur: + 175 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 27 ns

Anstiegszeit: 23 ns

Vgs-Gate-Source-Spannung: +/- 20 V

ID-Dauer-Drain-Strom: 180 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Widerstand: 2.2 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 80 ns

Typische-Einschaltverzögerungszeit: 33 ns

Qg-Gate-Ladung: 168 nC

Vorwärts-Transkonduktanz-Min: 132 S

Kanal-Modus: Erweiterung

Tags: IPB017, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB017N10N5ATMA1 Beschreibung

***ure Electronics: Single N-Channel 100 V 1.7 mOhm 168 nC OptiMOS Power Mosfet - D2PAK-7

***ical: Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 100V, 180A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB017N10N5ATMA1 Mehr Informationen

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB017N10N5ATMA1 DISTI # V72:2272_06377445	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R RoHS: Compliant	460	500:$3.8660 250:$4.2610 100:$4.4800 25:$5.1040 10:$5.1110 1:$5.9180
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4797In Stock	500:$4.5011 100:$5.5586 10:$6.7790 1:$7.5900
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4797In Stock	500:$4.5011 100:$5.5586 10:$6.7790 1:$7.5900
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A D2PAK-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	4000In Stock	1000:$3.6855
IPB017N10N5ATMA1 DISTI # 31954383	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R RoHS: Compliant	460	2:$5.9180
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N10N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.2900 4000:$3.1900 6000:$2.9900 10000:$2.9900
IPB017N10N5ATMA1 DISTI # SP001227028	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: SP001227028) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.0900 2000:€2.9900 4000:€2.9900 6000:€2.7900 10000:€2.6900
IPB017N10N5ATMA1 DISTI # 13AC9022	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	739	500:$4.3800 250:$4.8700 100:$5.1400 50:$5.4000 25:$5.6700 10:$5.9300 1:$6.9700
IPB017N10N5ATMA1 DISTI # 726-IPB017N10N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 100V 180A D2PAK-2 RoHS: Compliant	3414	1:$6.3300 10:$5.3800 100:$4.6600 250:$4.4200 500:$3.9700 1000:$3.3500 2000:$3.1800
IPB017N10N5ATMA1 DISTI # 2725835	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO-263 RoHS: Compliant	1074	500:£3.1000 250:£3.4500 100:£3.6300 10:£4.2000 1:£4.7200
IPB017N10N5ATMA1 DISTI # 2725835	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO-263 RoHS: Compliant	739	500:$7.1300 100:$8.8000 10:$10.7300 1:$12.0200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB017N10N5LFATMA1 OMO.#: OMO-IPB017N10N5LFATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: IPB017N10N5ATMA1 OMO.#: OMO-IPB017N10N5ATMA1	MOSFET N-Ch 100V 180A D2PAK-2
	Mfr.#: IPB017N10N5LFATMA1 OMO.#: OMO-IPB017N10N5LFATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V D2PAK-7
	Mfr.#: IPB017N10N5ATMA1 OMO.#: OMO-IPB017N10N5ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von IPB017N10N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~4,48 $~~; ~~4,48 $~~

10: ~~4,26 $~~; ~~42,61 $~~

100: ~~4,04 $~~; ~~403,65 $~~

500: ~~3,81 $~~; ~~1 906,15 $~~

1000: ~~3,59 $~~; ~~3 588,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB017N10N5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes