IPB60R160C6ATMA1

Mfr. #:: IPB60R160C6ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 600V 23.8A TO263
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB60R160C6ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPB60R160, IPB60R16, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R160C6ATMA1 Beschreibung

***ure Electronics: Single N-Channel 600 V 160 mOhm 75 nC CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R

***et: Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263

***et Europe: Trans MOSFET N-CH 650V 23.8A 3-Pin TO-263 T/R

***Components: MOSFET N-CH 600V 23.8A COOLMOS TO263

***an P&S: 600V,23.8A,N-ch power MOSFET

*** Source Electronics: MOSFET N-CH 600V 23.8A TO263

***ronik: CoolMOS 600V 23A 160mOhm TO263

***ark: MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; ;RoHS Compliant: Yes

***nell: MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:2; Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V

***ment14 APAC: MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB60R160C6ATMA1 DISTI # V72:2272_06376958	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.7680 500:$2.0950 250:$2.3320 100:$2.4610 25:$2.5310 10:$2.8120 1:$3.6597
IPB60R160C6ATMA1 DISTI # V36:1790_06376958	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB60R160C6ATMA1 DISTI # IPB60R160C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 23.8A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	637In Stock	500:$2.2771 100:$2.6750 10:$3.2650 1:$3.6400
IPB60R160C6ATMA1 DISTI # IPB60R160C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 23.8A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	637In Stock	500:$2.2771 100:$2.6750 10:$3.2650 1:$3.6400
IPB60R160C6ATMA1 DISTI # IPB60R160C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 23.8A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call	2000:$1.7758 1000:$1.8645
IPB60R160C6ATMA1 DISTI # 33595035	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.7680 500:$2.0950 250:$2.3320 100:$2.4610 25:$2.5310 10:$2.8120 4:$3.6597
IPB60R160C6ATMA1 DISTI # IPB60R160C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R160C6ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	4000:$1.5900 6000:$1.5900 10000:$1.5900 2000:$1.6900 1000:$1.7900
IPB60R160C6ATMA1 DISTI # 30T1829	Infineon Technologies AG	MOSFET,N CH,600V,23.8A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:23.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	564	500:$2.1200 250:$2.3600 100:$2.4900 50:$2.6200 25:$2.7500 10:$2.8800 1:$3.3800
IPB60R160C6ATMA1 DISTI # 726-IPB60R160C6ATMA1	Infineon Technologies AG	MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 RoHS: Compliant	1000	1:$3.3500 10:$2.8500 100:$2.4700 250:$2.3400 500:$2.1000 1000:$1.7700 2000:$1.6800
IPB60R160C6 DISTI # 726-IPB60R160C6	Infineon Technologies AG	MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 RoHS: Compliant	3009	1:$3.3500 10:$2.8500 100:$2.4700 250:$2.3400 500:$2.1000 1000:$1.7700 2000:$1.6800
IPB60R160C6ATMA1 DISTI # 1860815	Infineon Technologies AG	MOSFET,N CH,600V,23.8A,TO263	564	500:£1.4400 250:£1.6000 100:£1.7000 10:£1.9600 1:£2.8800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB60R160P6ATMA1 OMO.#: OMO-IPB60R160P6ATMA1	MOSFET HIGH POWER_PRICE/PERFORM
	Mfr.#: IPB60R160C6ATMA1 OMO.#: OMO-IPB60R160C6ATMA1	MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
	Mfr.#: IPB60R160C6 OMO.#: OMO-IPB60R160C6	MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
	Mfr.#: IPB60R165CP OMO.#: OMO-IPB60R165CP	MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R160C6ATMA1 OMO.#: OMO-IPB60R160C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 23.8A TO263
	Mfr.#: IPB60R160P6ATMA1 OMO.#: OMO-IPB60R160P6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3
	Mfr.#: IPB60R160C6 OMO.#: OMO-IPB60R160C6-1190	Trans MOSFET N-CH 650V 23.8A 3-Pin TO-263 T/R (Alt: IPB60R160C6)
	Mfr.#: IPB60R165CP 6R165P OMO.#: OMO-IPB60R165CP-6R165P-1190	Neu und Original
	Mfr.#: IPB60R165CPXT OMO.#: OMO-IPB60R165CPXT-1190	Neu und Original
	Mfr.#: IPB60R165CP OMO.#: OMO-IPB60R165CP-126	IGBT Transistors MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von IPB60R160C6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,37 $~~; ~~2,37 $~~

10: ~~2,25 $~~; ~~22,51 $~~

100: ~~2,13 $~~; ~~213,24 $~~

500: ~~2,01 $~~; ~~1 006,95 $~~

1000: ~~1,90 $~~; ~~1 895,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB60R160C6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes