IXFX24N100Q3

IXFX24N100Q3
Mfr. #:
IXFX24N100Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFX24N100Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX24N100Q3 DatasheetIXFX24N100Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFX24N100Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
440 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
140 nC
Pd - Verlustleistung:
1 kW
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFX24N100
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
300 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFX24N1, IXFX24N, IXFX24, IXFX2, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFX24N100Q3
DISTI # V36:1790_15878785
IXYS CorporationTrans MOSFET N-CH 1KV 24A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
0
  • 30000:$11.5400
  • 15000:$11.5500
  • 3000:$13.9400
  • 300:$19.8400
  • 30:$20.9400
IXFX24N100Q3
DISTI # IXFX24N100Q3-ND
IXYS CorporationMOSFET N-CH 1000V 24A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube
66In Stock
  • 510:$13.8040
  • 120:$16.1840
  • 30:$17.6120
  • 10:$19.0400
  • 1:$20.9400
IXFX24N100Q3
DISTI # 747-IXFX24N100Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A
RoHS: Compliant
91
  • 1:$24.0800
  • 10:$21.9000
  • 25:$20.2500
  • 50:$18.6300
  • 100:$18.1800
  • 250:$16.6600
  • 500:$15.1200
IXFX24N100Q3
DISTI # 8011483P
IXYS CorporationMOSFET NCH 1000V 24A Q3 HIPERFET PLUS247, TU13
  • 15:£15.1600
  • 6:£15.8200
Bild Teil # Beschreibung
IR4427SPBF

Mfr.#: IR4427SPBF

OMO.#: OMO-IR4427SPBF

Gate Drivers DUAL HI SIDE DRVR 6V to 20V 1.5A 85ns
T1210-800G-TR

Mfr.#: T1210-800G-TR

OMO.#: OMO-T1210-800G-TR

Triacs THYRISTOR TRIAC
IXFH18N100Q3

Mfr.#: IXFH18N100Q3

OMO.#: OMO-IXFH18N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFH20N100P

Mfr.#: IXFH20N100P

OMO.#: OMO-IXFH20N100P

MOSFET 20 Amps 1000V 1 Rds
178964-3

Mfr.#: 178964-3

OMO.#: OMO-178964-3

Headers & Wire Housings 6 POS HOUSING TAB DUAL
178289-3

Mfr.#: 178289-3

OMO.#: OMO-178289-3

Headers & Wire Housings 3.81 DYNAMIC REC HSG
T1210-800G-TR

Mfr.#: T1210-800G-TR

OMO.#: OMO-T1210-800G-TR-STMICROELECTRONICS

Triacs THYRISTOR TRIAC
IR4427SPBF

Mfr.#: IR4427SPBF

OMO.#: OMO-IR4427SPBF-INFINEON-TECHNOLOGIES

Gate Drivers DUAL HI SIDE DRVR 6V to 20V 1.5A 85ns
MMA02040C7508FB300

Mfr.#: MMA02040C7508FB300

OMO.#: OMO-MMA02040C7508FB300-VISHAY

MELF Resistors 0.4W 7.5ohms 1% 0204 MELF 150V 50ppm
178964-3

Mfr.#: 178964-3

OMO.#: OMO-178964-3-TE-CONNECTIVITY

Headers & Wire Housings 6 POS HOUSING TAB DUAL
Verfügbarkeit
Aktie:
88
Auf Bestellung:
2071
Menge eingeben:
Der aktuelle Preis von IXFX24N100Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
24,08 $
24,08 $
10
21,90 $
219,00 $
25
20,25 $
506,25 $
50
18,63 $
931,50 $
100
18,18 $
1 818,00 $
250
16,66 $
4 165,00 $
500
15,12 $
7 560,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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