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FGA15S125P

FGA15S125P
Mfr. #:
FGA15S125P
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors FORECAST FG
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA15S125P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA15S125P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1250 V
Kollektor-Emitter-Sättigungsspannung:
2.72 V
Maximale Gate-Emitter-Spannung:
25 V
Kontinuierlicher Kollektorstrom bei 25 C:
30 A
Pd - Verlustleistung:
136 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGA15S125P
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
15 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
500 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA15, FGA1, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
***emi
IGBT, 1250V, 15A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
***ark
RAIL / 1250V 15A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST
***rchild Semiconductor
HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.
***et
Trans IGBT Chip N-CH 1.25KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
***emi
1250V, 25A, Shorted-anode IGBT
***ark
RAIL / 1250V 25A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
7 A, 1200 V very fast IGBT with Ultrafast diode
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS - STGF3NC120HD - IGBT, N 1200V 3A TO-220FP
***nell
IGBT, N 1200V 3A TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220FP; No. of Pins: 3Pins
***ical
Trans IGBT Chip N-CH 1200V 14A 75000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
7 A, 1200 V very fast IGBT with Ultrafast diode
***nell
IGBT, SINGLE, 1.2KV, 14A, TO-220AB; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of
***ical
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 390pF 100volts C0G +/-5% Hi Rel
***ure Electronics
STGD5NB120SZ Series 1200 V 10 A Low Drop Internally Clamped IGBT - TO-251
***nell
IGBT, SINGLE, 1.2KV, 10A, TO-251; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FGA15S125P
DISTI # V36:1790_06359156		ON Semiconductor1250V 15A FS SA TRENCH IGBT450
  • 10000:$0.7741
  • 5000:$0.8058
  • 2500:$0.8366
  • 1000:$0.8828
  • 500:$1.0725
  • 100:$1.2340
  • 10:$1.5387
  • 1:$1.9831
FGA15S125P
DISTI # FGA15S125P-ND		ON SemiconductorIGBT 1250V 30A 136W TO3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		397In Stock
  • 5400:$0.8680
  • 2700:$0.8789
  • 900:$1.1393
  • 450:$1.3020
  • 25:$1.6276
  • 10:$1.7250
  • 1:$1.9200
FGA15S125P
DISTI # 27477665		ON Semiconductor1250V 15A FS SA TRENCH IGBT450
  • 10000:$0.7867
  • 5000:$0.7989
  • 2500:$0.8296
  • 1000:$0.8900
  • 500:$1.0692
  • 450:$1.2276
FGA15S125P
DISTI # 30209530		ON Semiconductor1250V 15A FS SA TRENCH IGBT450
  • 10000:$0.7741
  • 5000:$0.8058
  • 2500:$0.8366
  • 1000:$0.8828
  • 500:$1.0725
  • 100:$1.2098
  • 10:$1.5387
  • 8:$1.8029
FGA15S125P
DISTI # FGA15S125P		ON SemiconductorTrans IGBT Chip N-CH 1.25KV 30A 3-Pin TO-3PN Rail (Alt: FGA15S125P)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8159
  • 500:€0.8289
  • 100:€0.8419
  • 50:€0.8549
  • 25:€0.9419
  • 10:€1.1019
  • 1:€1.3469
FGA15S125P
DISTI # FGA15S125P		ON SemiconductorTrans IGBT Chip N-CH 1.25KV 30A 3-Pin TO-3PN Rail - Bulk (Alt: FGA15S125P)
Min Qty: 363
Container: Bulk		Americas - 0
  • 3630:$0.8509
  • 1815:$0.8729
  • 1089:$0.8839
  • 726:$0.8959
  • 363:$0.9009
FGA15S125P
DISTI # FGA15S125P		ON SemiconductorTrans IGBT Chip N-CH 1.25KV 30A 3-Pin TO-3PN Rail - Rail/Tube (Alt: FGA15S125P)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$0.7649
  • 2700:$0.7839
  • 1800:$0.7939
  • 900:$0.8049
  • 450:$0.8099
FGA15S125P
DISTI # 63W2871		ON SemiconductorSA2TIGBT TO3PN 15A 1250V / TUBE0
  • 10000:$0.8500
  • 2500:$0.9000
  • 1000:$0.9430
  • 500:$1.1100
  • 100:$1.2300
  • 10:$1.4800
  • 1:$1.8200
FGA15S125P
DISTI # 512-FGA15S125P		ON SemiconductorIGBT Transistors FORECAST FG
RoHS: Compliant		82
  • 1:$1.8200
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0800
  • 1000:$0.8990
  • 2500:$0.8380
  • 5000:$0.8070
  • 10000:$0.7750
FGA15S125PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
RoHS: Compliant		14400
  • 1000:$0.9100
  • 500:$0.9600
  • 100:$1.0000
  • 25:$1.0400
  • 1:$1.1200
FGA15S125P
DISTI # 8648764		ON SemiconductorIGBT 1250V 15A SHORTED-ANODE TO3PN, PK805
  • 500:£1.1920
  • 250:£1.2620
  • 100:£1.3500
  • 50:£1.5440
  • 5:£1.7540
Bild Teil # Beschreibung
TLV6004IPWR

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Mfr.#: LVT12R0050FER

OMO.#: OMO-LVT12R0050FER

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LVT12R0100FER

Mfr.#: LVT12R0100FER

OMO.#: OMO-LVT12R0100FER

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CLF7045NIT-100M-D

Mfr.#: CLF7045NIT-100M-D

OMO.#: OMO-CLF7045NIT-100M-D

 Fixed Inductors 10uH 0.033ohms 3.0A 20% AEC-Q200
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Mfr.#: TLV6004IPWR

OMO.#: OMO-TLV6004IPWR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps 1-MHz, Low-Power Operational Amplifier for Cost-Sensitive Systems 14-TSSOP -40 to 125
105300-2100

Mfr.#: 105300-2100

OMO.#: OMO-105300-2100-1190

 Contact F Crimp ST Cable Reel - Bulk (Alt: 1053002100)
NSR0530HT1G

Mfr.#: NSR0530HT1G

OMO.#: OMO-NSR0530HT1G-ON-SEMICONDUCTOR

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BCAP0003 P270 S01

Mfr.#: BCAP0003 P270 S01

OMO.#: OMO-BCAP0003-P270-S01-MAXWELL-TECHNOLOGIES

 CAP 3F -10% +20% 2.7V T/H
Verfügbarkeit
Aktie:
63
Auf Bestellung:
2046
Menge eingeben:
Der aktuelle Preis von FGA15S125P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,82 $
1,82 $
10
1,55 $
15,50 $
100
1,24 $
124,00 $
500
1,08 $
540,00 $
1000
0,90 $
899,00 $
2500
0,84 $
2 095,00 $
5000
0,81 $
4 035,00 $
10000
0,78 $
7 750,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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