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SCT2120AFC

SCT2120AFC
Mfr. #:
SCT2120AFC
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET MOSFET650V 29 -220A Silicon Carbide SiC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT2120AFC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT2120AFC Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
120 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.6 V
Vgs - Gate-Source-Spannung:
- 6 V, 22 V
Qg - Gate-Ladung:
61 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
165 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
SCT2x
Transistortyp:
1 N-Channel Power MOSFET
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
2.7 S
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
31 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
22 ns
Teil # Aliase:
SCT2120AF
Gewichtseinheit:
0.211644 oz
Tags
SCT21, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT2120AFC - 650 V 120 mO 61 nC N-Channel SIC Power MosFet - TO-220AB
***ical
Trans MOSFET N-CH SiC 650V 29A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CHANNEL, 650V, 29A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 165W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Teil # Mfg. Beschreibung Aktie Preis
SCT2120AFC
DISTI # 32649982		ROHM SemiconductorSCT2120AFC1543
  • 2:$16.1250
SCT2120AFC
DISTI # SCT2120AFC-ND		ROHM SemiconductorMOSFET N-CH 650V 29A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		763In Stock
  • 1000:$8.2194
  • 100:$10.0734
  • 25:$11.4332
  • 10:$11.9270
  • 1:$12.9800
SCT2120AFC
DISTI # C1S625901175866		ROHM SemiconductorMOSFETs1543
  • 1000:$6.0900
  • 500:$8.8700
  • 200:$9.2900
  • 100:$9.9600
  • 50:$11.3000
  • 10:$11.9000
  • 1:$12.9000
SCT2120AFC
DISTI # SCT2120AFC		ROHM SemiconductorTrans SiC MOSFET N-CH 650V 29A 3-Pin TO-220AB Tube - Rail/Tube (Alt: SCT2120AFC)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$7.9333
  • 6000:$8.1530
  • 4000:$8.6313
  • 2000:$9.1691
  • 1000:$9.7785
SCT2120AFC
DISTI # SCT2120AFC		ROHM SemiconductorTrans SiC MOSFET N-CH 650V 29A 3-Pin TO-220AB Tube (Alt: SCT2120AFC)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 250:€9.0500
  • 100:€9.0700
  • 50:€9.5700
  • 10:€10.0500
  • 5:€11.4000
  • 1:€12.0300
SCT2120AFC.
DISTI # 30AC0013		ROHM SemiconductorTransistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V,Power Dissipation Pd:165W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 10000:$7.9400
  • 6000:$8.1600
  • 4000:$8.6400
  • 2000:$9.1700
  • 1:$9.7800
SCT2120AFC
DISTI # 755-SCT2120AFC		ROHM SemiconductorMOSFET MOSFET650V 29 -220A Silicon Carbide SiC
RoHS: Compliant		560
  • 1:$12.9700
  • 10:$11.9200
  • 25:$11.4300
  • 100:$10.0700
  • 250:$9.5700
  • 500:$8.9600
SCT2120AFCROHM Semiconductor 193
  • 158:$11.6160
  • 75:$12.7050
  • 1:$16.3350
SCT2120AFCROHM SemiconductorMOSFET MOSFET650V 29 -220A Silicon Carbide SiC
RoHS: Compliant		Americas - 1000
  • 50:$8.9000
  • 2000:$8.4100
  • 5000:$8.2300
  • 10000:$8.1000
SCT2120AFCROHM SemiconductorRoHS(ship within 1day)242
  • 1:$9.8300
  • 10:$8.0800
  • 50:$7.7500
  • 100:$7.5400
  • 500:$7.3700
  • 1000:$7.2600
SCT2120AFC
DISTI # 2469808		ROHM SemiconductorMOSFET, N CHANNEL, 650V, 29A, TO-220AB35
  • 100:£8.1900
  • 50:£8.4700
  • 10:£8.7300
  • 5:£10.1000
  • 1:£10.6100
SCT2120AFC
DISTI # 2469808		ROHM SemiconductorMOSFET, N CHANNEL, 650V, 29A, TO-220AB
RoHS: Compliant		35
  • 25:$17.2300
  • 10:$17.9600
  • 1:$19.5500
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Verfügbarkeit
Aktie:
517
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von SCT2120AFC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,97 $
12,97 $
10
11,92 $
119,20 $
25
11,43 $
285,75 $
100
10,07 $
1 007,00 $
250
9,57 $
2 392,50 $
500
8,96 $
4 480,00 $
1000
8,22 $
8 220,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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