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FDD8586

FDD8586
Mfr. #:
FDD8586
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 20V 35A 5.5 OHM NCH DPAK PO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDD8586 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDD8586 DatasheetFDD8586 Datasheet (P4-P6)FDD8586 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
4 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
77 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
175 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
9 ns
Gewichtseinheit:
0.000557 oz
Tags
FDD85, FDD8, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TRANS MOSFET N-CH 20V 35A 3PIN TO-252
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:77W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:35A; Package / Case:DPAK; Power Dissipation Pd:77W; Power Dissipation Pd:77W; Pulse Current Idm:354A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.2V
Teil # Mfg. Beschreibung Aktie Preis
FDD8586
DISTI # FDD8586TR-ND		ON SemiconductorMOSFET N-CH 20V 35A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDD8586
    DISTI # FDD8586CT-ND    		ON SemiconductorMOSFET N-CH 20V 35A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDD8586
      DISTI # FDD8586DKR-ND      		ON SemiconductorMOSFET N-CH 20V 35A DPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDD8586
        DISTI # FDD8586        		ON SemiconductorTRANS MOSFET N-CH 20V 35A 3PIN TO-252 - Bulk (Alt: FDD8586)
        RoHS: Compliant
        Min Qty: 1000
        Container: Bulk        		Americas - 0
        • 10000:$0.3079
        • 5000:$0.3159
        • 3000:$0.3199
        • 2000:$0.3239
        • 1000:$0.3259
        FDD8586
        DISTI # 512-FDD8586        		ON SemiconductorMOSFET 20V 35A 5.5 OHM NCH DPAK PO
        RoHS: Compliant        		0
          FDD8586Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
          RoHS: Compliant          		83625
          • 1000:$0.3300
          • 500:$0.3500
          • 100:$0.3600
          • 25:$0.3800
          • 1:$0.4100
          FDD8586Freescale Semiconductor 142
          • 70:$0.5250
          • 15:$0.8750
          • 1:$1.7500
          FDD8586Fairchild Semiconductor Corporation 178
          • 4:$1.3125
          • 17:$0.8531
          • 60:$0.4922
          FDD8586
          DISTI # 1324786          		ON SemiconductorMOSFET, N, D-PAK
          RoHS: Compliant          		0
          • 250:$1.4200
          • 100:$1.6700
          • 10:$2.2100
          • 1:$2.5200
          Bild Teil # Beschreibung
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          Mfr.#: FDD3580-NL

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          FDD3670

          Mfr.#: FDD3670

          OMO.#: OMO-FDD3670-ON-SEMICONDUCTOR

          		 MOSFET N-CH 100V 34A D-PAK
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          Mfr.#: FDD6296_F054

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          OMO.#: OMO-FDD8N50NZ-8N50-1190

          		 Neu und Original
          FDDS09H04A_F085A

          Mfr.#: FDDS09H04A_F085A

          OMO.#: OMO-FDDS09H04A-F085A-1190

          		 Neu und Original
          FDD86250-CUT TAPE

          Mfr.#: FDD86250-CUT TAPE

          OMO.#: OMO-FDD86250-CUT-TAPE-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4500
          Menge eingeben:
          Der aktuelle Preis von FDD8586 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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