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FQD13N06LTM

FQD13N06LTM
Mfr. #:
FQD13N06LTM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 60V N-Channel QFET Logic Level
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQD13N06LTM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
115 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FQD13N06L
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
90 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
FQD13N06LTM_NL
Gewichtseinheit:
0.009184 oz
Tags
FQD13N06LTM, FQD13N06LT, FQD13N06L, FQD13N0, FQD13, FQD1, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK
***ark
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,11A I(D),TO-252AA
***ure Electronics
N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3
***ment14 APAC
MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Source Voltage Vds:60V; On Resistance
***roFlash
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 28W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
***ure Electronics
N-Channel 60 V 0.107 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:11mA; Package/Case:3-TO-251; Operating Temperature Range:-55°C to +175°C
***rchild Semiconductor
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
***emi
N-Channel Power MOSFET, QFET®, 60 V, 10 A, 140 mΩ, DPAK
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
*** Electronics
RFD14N05SM FSC TRANSISTOR MOSFET N-CH 50V 14A TO- 252AA RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Alternate Case Style: TO-252; Current Id Max: 14A; Current Temperature: 25°C; External Depth: 10.5mm; External Length / Height: 2.55mm; External Width: 6.8mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Ptot Max: 48W; Pulse Current Idm: 22A; SMD Marking: RFD14N05SM; Termination Type: Surface Mount Device; Voltage Vds Typ: 50V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
FQD13N06LTM
DISTI # V72:2272_06301232		ON SemiconductorTrans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R2465
  • 1000:$0.2870
  • 500:$0.3593
  • 100:$0.3595
  • 25:$0.5464
  • 10:$0.5469
  • 1:$0.6536
FQD13N06LTM
DISTI # FQD13N06LTMCT-ND		ON SemiconductorMOSFET N-CH 60V 11A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2355In Stock
  • 1000:$0.3506
  • 500:$0.4340
  • 100:$0.5800
  • 10:$0.7470
  • 1:$0.8500
FQD13N06LTM
DISTI # FQD13N06LTMDKR-ND		ON SemiconductorMOSFET N-CH 60V 11A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2355In Stock
  • 1000:$0.3506
  • 500:$0.4340
  • 100:$0.5800
  • 10:$0.7470
  • 1:$0.8500
FQD13N06LTM
DISTI # FQD13N06LTMTR-ND		ON SemiconductorMOSFET N-CH 60V 11A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.3100
FQD13N06LTM
DISTI # 31645159		ON SemiconductorTrans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R5000
  • 2500:$0.1277
FQD13N06LTM
DISTI # 31314264		ON SemiconductorTrans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R2465
  • 1000:$0.2870
  • 500:$0.3593
  • 100:$0.3595
  • 32:$0.5464
FQD13N06LTM
DISTI # FQD13N06LTM		ON SemiconductorTrans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R (Alt: FQD13N06LTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 44090
  • 2500:€0.2489
  • 5000:€0.1929
  • 10000:€0.1579
  • 15000:€0.1339
  • 25000:€0.1239
FQD13N06LTM
DISTI # FQD13N06LTM		ON SemiconductorTrans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N06LTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2149
  • 5000:$0.2139
  • 10000:$0.2109
  • 15000:$0.2079
  • 25000:$0.2029
FQD13N06LTM
DISTI # 31Y1522		ON SemiconductorTrans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 31Y1522)
RoHS: Compliant
Min Qty: 5
Container: Ammo Pack		Americas - 0
  • 1:$0.7420
  • 10:$0.6170
  • 25:$0.5460
  • 50:$0.4760
  • 100:$0.4050
  • 250:$0.3790
  • 500:$0.3530
FQD13N06LTM
DISTI # 31Y1522		ON SemiconductorMOSFET, N CH, 60V, 11A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.092ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes2384
  • 1:$0.7260
  • 10:$0.6040
  • 25:$0.5340
  • 50:$0.4650
  • 100:$0.3960
  • 250:$0.3710
  • 500:$0.3460
  • 1000:$0.3210
FQD13N06LTM
DISTI # 34C0419		ON SemiconductorMOSFET Transistor, N Channel, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V RoHS Compliant: Yes0
  • 1:$0.2590
  • 2500:$0.2580
  • 10000:$0.2480
  • 25000:$0.2410
FQD13N06LTMON SemiconductorN-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3
RoHS: Compliant		77500Reel
  • 2500:$0.1430
  • 5000:$0.1370
FQD13N06LTM
DISTI # 512-FQD13N06LTM		ON SemiconductorMOSFET 60V N-Channel QFET Logic Level
RoHS: Compliant		9517
  • 1:$0.6900
  • 10:$0.5710
  • 100:$0.3680
  • 1000:$0.2950
FQD13N06LTMON Semiconductor 
RoHS: Not Compliant		2490
  • 1000:$0.2500
  • 500:$0.2600
  • 100:$0.2700
  • 25:$0.2900
  • 1:$0.3100
FQD13N06LTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		1470
  • 1000:$0.2500
  • 500:$0.2600
  • 100:$0.2700
  • 25:$0.2900
  • 1:$0.3100
FQD13N06LTM
DISTI # FQD13N06LTM		ON SemiconductorTransistor: N-MOSFET,unipolar,60V,7A,28W,DPAK527
  • 3:$0.3700
  • 25:$0.3300
  • 100:$0.2600
  • 500:$0.2400
  • 2500:$0.2300
FQD13N06LTMON SemiconductorINSTOCK12677
    FQD13N06LTM
    DISTI # C1S541901586159    		ON SemiconductorMOSFETs
    RoHS: Not Compliant    		1340
    • 10:$0.4500
    • 1:$0.5380
    FQD13N06LTM
    DISTI # XSFP00000021128    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		62500
    • 2500:$0.2860
    • 62500:$0.2600
    FQD13N06LTM
    DISTI # XSKDRABV0019385    		ON SEMICONDUCTOR 
    RoHS: Compliant    		36590
    • 2500:$0.2029
    • 36590:$0.1893
    FQD13N06LTM
    DISTI # 2454166    		ON SemiconductorMOSFET, N CH, 60V, 11A, TO-252AA-3
    RoHS: Compliant    		2379
    • 1:$1.1000
    • 10:$0.9030
    • 100:$0.5830
    • 1000:$0.4680
    • 2500:$0.4680
    FQD13N06LTM
    DISTI # 2454166RL    		ON SemiconductorMOSFET, N CH, 60V, 11A, TO-252AA-3
    RoHS: Compliant    		0
    • 1:$1.1000
    • 10:$0.9030
    • 100:$0.5830
    • 1000:$0.4680
    • 2500:$0.4680
    FQD13N06LTM
    DISTI # 2454166    		ON SemiconductorMOSFET, N CH, 60V, 11A, TO-252AA-3
    RoHS: Compliant    		2394
    • 500:£0.2320
    • 250:£0.2540
    • 100:£0.2760
    • 25:£0.4470
    • 5:£0.4840
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von FQD13N06LTM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,63 $
    0,63 $
    10
    0,53 $
    5,29 $
    100
    0,32 $
    32,20 $
    1000
    0,25 $
    249,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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