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IPA60R460CEXKSA1

IPA60R460CEXKSA1
Mfr. #:
IPA60R460CEXKSA1
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 650V 9.1A TO220FP-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA60R460CEXKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IPA60R460CEXKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Rohr
Teil-Aliasnamen
IPA60R460CE SP001276042
Gewichtseinheit
0.081130 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
30 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
10 ns
Anstiegszeit
9 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
9.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Widerstand
460 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
70 ns
Typische-Einschaltverzögerungszeit
11 ns
Qg-Gate-Ladung
28 nC
Kanal-Modus
Erweiterung
Tags
IPA60R46, IPA60R4, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 460 mOhm 28 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Teil # Mfg. Beschreibung Aktie Preis
IPA60R460CEXKSA1
DISTI # IPA60R460CEXKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$0.6219
  • 500:$0.7706
  • 100:$0.9751
  • 10:$1.2170
  • 1:$1.3600
IPA60R460CEXKSA1
DISTI # IPA60R460CEXKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 9.1A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA60R460CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.4869
  • 2000:$0.4689
  • 3000:$0.4519
  • 5000:$0.4369
  • 10000:$0.4289
IPA60R460CEXKSA1
DISTI # SP001276042		Infineon Technologies AGTrans MOSFET N-CH 650V 9.1A 3-Pin TO-220 Tube (Alt: SP001276042)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€0.7029
  • 10:€0.6249
  • 25:€0.5619
  • 50:€0.5109
  • 100:€0.4689
  • 500:€0.4319
  • 1000:€0.4019
IPA60R460CEXKSA1
DISTI # 13AC9014		Infineon Technologies AGMOSFET, N-CH, 600V, 13.1A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:13.1A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes137
  • 1:$1.0200
  • 10:$0.8680
  • 100:$0.6670
  • 500:$0.5900
IPA60R460CEXKSA1
DISTI # 726-IPA60R460CEXKSA1		Infineon Technologies AGMOSFET N-Ch 600V 9.1A TO220FP-3
RoHS: Compliant		1998
  • 1:$1.1100
  • 10:$0.9470
  • 100:$0.7270
  • 500:$0.6430
IPA60R460CEXKSA1
DISTI # 2726039		Infineon Technologies AGMOSFET, N-CH, 600V, 13.1A, TO-220FP-3
RoHS: Compliant		137
  • 1:$2.0600
  • 10:$1.8300
  • 100:$1.4500
IPA60R460CEXKSA1
DISTI # 2726039		Infineon Technologies AGMOSFET, N-CH, 600V, 13.1A, TO-220FP-3
RoHS: Compliant		139
  • 5:£0.8200
  • 25:£0.6500
  • 100:£0.5000
  • 250:£0.4740
  • 500:£0.4360
Bild Teil # Beschreibung
IPA60R460CEXKSA1

Mfr.#: IPA60R460CEXKSA1

OMO.#: OMO-IPA60R460CEXKSA1

 MOSFET N-Ch 600V 9.1A TO220FP-3
IPA60R460CE

Mfr.#: IPA60R460CE

OMO.#: OMO-IPA60R460CE-1190

 MOSFET, N-CH, 600V, 13.1A, TO-220FP-3
IPA60R460CEXKSA1 , 2SD18

Mfr.#: IPA60R460CEXKSA1 , 2SD18

OMO.#: OMO-IPA60R460CEXKSA1-2SD18-1190

 Neu und Original
IPA60R460CEXKSA1

Mfr.#: IPA60R460CEXKSA1

OMO.#: OMO-IPA60R460CEXKSA1-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET N-Ch 650V 9.1A TO220FP-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPA60R460CEXKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,59 $
0,59 $
10
0,56 $
5,58 $
100
0,53 $
52,88 $
500
0,50 $
249,70 $
1000
0,47 $
470,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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