A2T21H410-24SR6

A2T21H410-24SR6
Mfr. #:
A2T21H410-24SR6
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2T21H410-24SR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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HTML Datasheet:
A2T21H410-24SR6 DatasheetA2T21H410-24SR6 Datasheet (P4-P6)A2T21H410-24SR6 Datasheet (P7-P9)A2T21H410-24SR6 Datasheet (P10-P12)A2T21H410-24SR6 Datasheet (P13-P15)A2T21H410-24SR6 Datasheet (P16)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
1.6 A, 2.7 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 65 V
Gewinnen:
15.6 dB
Ausgangsleistung:
72 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-1230S-4L2L-6
Verpackung:
Spule
Arbeitsfrequenz:
2.11 GHz to 2.17 GHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
2 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Teil # Aliase:
935312756128
Gewichtseinheit:
0.303504 oz
Tags
A2T21H4, A2T21H, A2T21, A2T2, A2T
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V / REEL RoHS Compliant: Yes
***W
RF Power Transistor,2110 to 2170 MHz, 316 W, Typ Gain in dB is 15.6 @ 2170 MHz, 28 V, LDMOS, SOT1800
***et
Transistor RF FET N-CH 65V 2110MHz to 2170MHz 6-Pin NI-1230S T/R
Teil # Mfg. Beschreibung Aktie Preis
A2T21H410-24SR6
DISTI # A2T21H410-24SR6-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$170.6931
A2T21H410-24SR6
DISTI # A2T21H410-24SR6
Avnet, Inc.Trans MOSFET N-CH -0.5/65V 6-Pin NI-1230 T/R - Tape and Reel (Alt: A2T21H410-24SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 150:$186.9900
  • 300:$179.6900
  • 600:$172.6900
  • 900:$166.3900
  • 1500:$163.1900
A2T21H410-24SR6
DISTI # A2T21H410-24SR6
Avnet, Inc.Trans MOSFET N-CH -0.5/65V 6-Pin NI-1230 T/R (Alt: A2T21H410-24SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel
Europe - 0
  • 150:€171.6900
  • 300:€165.3900
  • 600:€159.4900
  • 900:€153.9900
  • 1500:€148.7900
A2T21H410-24SR6
DISTI # 841-A2T21H410-24SR6
NXP SemiconductorsRF MOSFET Transistors A2T21H410-24S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 150:$166.8500
A2T21H410-24SR6
DISTI # A2T21H410-24SR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
1688
  • 1:$176.9000
  • 10:$172.2500
  • 25:$170.0100
Bild Teil # Beschreibung
A2T21H410-24SR6

Mfr.#: A2T21H410-24SR6

OMO.#: OMO-A2T21H410-24SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V
A2T21H450W19SR6

Mfr.#: A2T21H450W19SR6

OMO.#: OMO-A2T21H450W19SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 89 W Avg., 30 V
A2T21H410-24SR6

Mfr.#: A2T21H410-24SR6

OMO.#: OMO-A2T21H410-24SR6-NXP-SEMICONDUCTORS

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V
A2T21H450W19SR6

Mfr.#: A2T21H450W19SR6

OMO.#: OMO-A2T21H450W19SR6-NXP-SEMICONDUCTORS

2.1GHZ 450W NI1230S-4S4S
A2T21H410-24S

Mfr.#: A2T21H410-24S

OMO.#: OMO-A2T21H410-24S-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von A2T21H410-24SR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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