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BD435G

BD435G
Mfr. #:
BD435G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP NPN 4A 22V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BD435G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BD435G DatasheetBD435G Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-225-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
32 V
Kollektor- Basisspannung VCBO:
32 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
500 mV
Maximaler DC-Kollektorstrom:
4 A
Bandbreitenprodukt fT gewinnen:
3 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
BD435
Höhe:
11.04 mm
Länge:
7.74 mm
Verpackung:
Schüttgut
Breite:
2.66 mm
Marke:
ON Semiconductor
DC-Kollektor/Basisverstärkung hfe Min:
40
Pd - Verlustleistung:
36000 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.068784 oz
Tags
BD435, BD43, BD4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 32V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
***emi
Medium Power NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***th Star Micro
This series of plastic medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442.
***ark
BIPOLAR TRANSISTOR, NPN, 32V; Transistor Polarity:NPN; Collector Emitter Voltage Max:32V; Continuous Collector Current:4A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; MSL:- RoHS Compliant: Yes
***ical
Trans GP BJT NPN 45V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
***emi
Medium Power NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***ure Electronics
BD Series 45 V 4 A Plastic Medium Power Silicon NPN Transistor - TO-225
***el Electronic
Bipolar Transistors - BJT 0.2A 40V 1.5W PNP
***nell
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 85hFE; Transistor Case Style:
***th Star Micro
This series of plastic medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442.
***ark
Bipolar Transistor, Npn, 45V, To-225Aa; Transistor Polarity:npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:4A; Power Dissipation:36W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes
***ure Electronics
Bipolar (BJT) Transistor NPN 45 V 4 A 3MHz 36 W Through Hole TO-225AA
***ical
Trans GP BJT NPN 45V 4A 36000mW 3-Pin(3+Tab) TO-225 Tube
***emi
Medium Power NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***el Electronic
Transistors - Bipolar (BJT) - Single TO-261-4, TO-261AA 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 75 @ 1A 2V 500mV @ 200mA, 2A 150°C TJ 100nA ICBO TRANS PNP 60V 2A SOT223
***ark
BIPOLAR TRANSISTOR, NPN, 45V, TO-225AA; Transistor Polarity:NPN; Collector Emitter Voltage Max:45V; Continuous Collector Current:4A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
***ure Electronics
BD441G Series 80 V 4 mA Through Hole NPN Power Transistor - SOT-23
***ical
Trans GP BJT NPN 80V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
***emi
Medium Power NPN Bipolar Power Transistor
***roFlash
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 15hFE; Transist
***th Star Micro
This series of plastic medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442.
***ark
BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
BD435G
DISTI # V36:1790_07304637		ON SemiconductorTrans GP BJT NPN 32V 4A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant		2679
  • 50000:$0.1642
  • 25000:$0.1676
  • 10000:$0.1752
  • 2500:$0.1868
  • 1000:$0.2134
  • 500:$0.2630
BD435G
DISTI # BD435GOS-ND		ON SemiconductorTRANS NPN 32V 4A TO-225AA
RoHS: Compliant
Min Qty: 1
Container: Bulk		1196In Stock
  • 1000:$0.2404
  • 500:$0.3112
  • 100:$0.3960
  • 10:$0.5300
  • 1:$0.6200
BD435G
DISTI # 26150301		ON SemiconductorTrans GP BJT NPN 32V 4A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant		2500
  • 2500:$0.1868
  • 1000:$0.2134
  • 500:$0.2630
BD435G
DISTI # 25632793		ON SemiconductorTrans GP BJT NPN 32V 4A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant		1000
  • 2500:$0.1709
  • 1000:$0.1955
BD435G
DISTI # BD435G		ON SemiconductorTrans GP BJT NPN 32V 4A 3-Pin TO-225 Bulk (Alt: BD435G)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Europe - 182
  • 1:€0.4259
  • 10:€0.3739
  • 25:€0.3729
  • 50:€0.3719
  • 100:€0.2539
  • 500:€0.2529
  • 1000:€0.1959
BD435GON Semiconductor 
RoHS: Not Compliant		15100
  • 1000:$0.2200
  • 500:$0.2300
  • 100:$0.2400
  • 25:$0.2500
  • 1:$0.2700
BD435G
DISTI # 863-BD435G		ON SemiconductorBipolar Transistors - BJT BIP NPN 4A 22V
RoHS: Compliant		1487
  • 1:$0.5900
  • 10:$0.4870
  • 100:$0.2970
  • 1000:$0.2300
  • 2500:$0.1960
  • 10000:$0.1820
  • 25000:$0.1730
BD435
DISTI # N/A		ON SemiconductorBipolar Transistors - BJT BIP C77 NPN 4A 22V0
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von BD435G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,59 $
    0,59 $
    10
    0,49 $
    4,87 $
    100
    0,30 $
    29,70 $
    1000
    0,23 $
    230,00 $
    2500
    0,20 $
    490,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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