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IXGT30N120B3D1

IXGT30N120B3D1
Mfr. #:
IXGT30N120B3D1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 30 Amps 1200V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGT30N120B3D1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGT30N120B3D1 DatasheetIXGT30N120B3D1 Datasheet (P4-P6)IXGT30N120B3D1 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-268-3
Montageart:
SMD/SMT
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
3.5 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXGT30N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
30 A
Höhe:
5.1 mm
Länge:
16.05 mm
Breite:
14 mm
Marke:
IXYS
Kontinuierlicher Kollektorstrom:
50 A
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
0.158733 oz
Tags
IXGT30, IXGT3, IXGT, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IXGT Series 1200 V 30 A GenX3™ High Speed Low Vsat PT IGBT - TO-268
***ark
Igbt, Single, N-Ch, 1.2Kv, 50A, To-268; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):2.96V; Power Dissipation Pd:300W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-268; No. Of Rohs Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 3.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 300 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-268 / Pins = 3 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
***i-Key
IGBT 1200V 75A 300W TO268
***el Nordic
Contact for details
***ure Electronics
IXGT Series 1700 Vce 10 A 46 ns td(on) HiPerFAST IGBT w/ Diode - TO-268
***ical
Trans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(2+Tab) TO-268
***i-Key
IGBT 1700V 10A 140W TO268
Teil # Mfg. Beschreibung Aktie Preis
IXGT30N120B3D1
DISTI # V36:1790_15877938		IXYS CorporationTrans IGBT Chip 1.2KV 50A 3-Pin(2+Tab) TO-268
RoHS: Compliant		0
    IXGT30N120B3D1
    DISTI # V99:2348_15877938    		IXYS CorporationTrans IGBT Chip 1.2KV 50A 3-Pin(2+Tab) TO-268
    RoHS: Compliant    		0
    • 1:$6.4592
    IXGT30N120B3D1
    DISTI # IXGT30N120B3D1-ND    		IXYS CorporationIGBT 1200V 300W TO268
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Temporarily Out of Stock
    • 30:$6.6727
    IXGT30N120B3D1
    DISTI # 747-IXGT30N120B3D1    		IXYS CorporationIGBT Transistors 30 Amps 1200V
    RoHS: Compliant    		0
    • 1:$8.1400
    • 10:$7.3200
    • 25:$6.6700
    • 50:$6.1000
    • 100:$6.0200
    • 250:$5.4900
    • 500:$5.0500
    • 1000:$4.4000
    IXGT30N120B3D1
    DISTI # 192635    		IXYS CorporationTRANSISTOR IGBT CHIP 1.2KV 50A TO268, EA58
    • 100:£4.5700
    • 50:£5.2600
    • 20:£5.5100
    • 5:£5.8200
    • 1:£6.1200
    IXGT30N120B3D1
    DISTI # 2674775    		IXYS CorporationIGBT, SINGLE, N-CH, 1.2KV, 50A, TO-268
    RoHS: Compliant    		0
    • 1000:$6.7800
    • 500:$7.1000
    • 250:$7.4900
    • 100:$7.9200
    • 10:$8.9500
    • 1:$9.5800
    IXGT30N120B3D1
    DISTI # 2674775    		IXYS CorporationIGBT, SINGLE, N-CH, 1.2KV, 50A, TO-268
    RoHS: Compliant    		0
    • 100:£4.6900
    • 50:£4.7500
    • 10:£5.1000
    • 5:£6.3300
    • 1:£6.9000
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    OMO.#: OMO-M80-8411042

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    OMO.#: OMO-MPQ4420HGJ-P-MONOLITHIC-POWER-SYSTEMS

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    Verfügbarkeit
    Aktie:
    30
    Auf Bestellung:
    2013
    Menge eingeben:
    Der aktuelle Preis von IXGT30N120B3D1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    8,14 $
    8,14 $
    10
    7,32 $
    73,20 $
    25
    6,67 $
    166,75 $
    50
    6,10 $
    305,00 $
    100
    6,02 $
    602,00 $
    250
    5,49 $
    1 372,50 $
    500
    5,05 $
    2 525,00 $
    1000
    4,40 $
    4 400,00 $
    2500
    4,34 $
    10 850,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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