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S25FL128SAGBHN203

S25FL128SAGBHN203
Mfr. #:
S25FL128SAGBHN203
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash NOR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL128SAGBHN203 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
S25FL128SAGBHN203 Mehr Informationen S25FL128SAGBHN203 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
N
Montageart:
SMD/SMT
Paket / Koffer:
BGA-24
Serie:
S25FL128S
Speichergröße:
128 Mbit
Maximale Taktfrequenz:
133 MHz
Oberflächentyp:
SPI
Organisation:
16 M x 8
Timing-Typ:
Asynchron
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
100 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Verpackung:
Spule
Speichertyp:
NOCH
Geschwindigkeit:
133 MHz
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SpiegelBit
Tags
S25FL128SAGB, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Flash Memory NOR
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL128SAGBHN203
DISTI # S25FL128SAGBHN203-ND		Cypress SemiconductorIC NOR
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.1254
S25FL128SAGBHN203
DISTI # 727-S25FL128SAGBHN20		Cypress SemiconductorNOR Flash NOR
RoHS: Not compliant		0
  • 2500:$2.7300
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 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von S25FL128SAGBHN203 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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