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IGZ75N65H5XKSA1

IGZ75N65H5XKSA1
Mfr. #:
IGZ75N65H5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT 650V 75A SGL TO-247-4
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGZ75N65H5XKSA1 Datenblatt
Die Zustellung:
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ECAD Model:
Mehr Informationen:
IGZ75N65H5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IGZ
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube
***ronik
IGBT 650V 75A 1,65V TO247-3
***i-Key
IGBT 650V 75A SGL TO-247-4
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Teil # Mfg. Beschreibung Aktie Preis
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 75A SGL TO-247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.7490
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Bulk (Alt: IGZ75N65H5XKSA1)
Min Qty: 115
Container: Bulk		Americas - 0
  • 1150:$2.6900
  • 575:$2.7900
  • 345:$2.8900
  • 230:$2.9900
  • 115:$3.0900
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ75N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$3.1900
  • 2400:$3.1900
  • 960:$3.3900
  • 480:$3.4900
  • 240:$3.5900
IGZ75N65H5XKSA1
DISTI # SP001160054		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube (Alt: SP001160054)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.6900
  • 500:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.0900
  • 10:€3.3900
  • 1:€4.1900
IGZ75N65H5XKSA1
DISTI # 726-IGZ75N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
  • 1:$6.0400
  • 10:$5.4600
  • 25:$5.2000
  • 100:$4.5200
  • 250:$4.3200
  • 500:$3.9300
IGZ75N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 119A I(C), 650V V(BR)CES, N-Channel
RoHS: Not Compliant		4170
  • 1000:$2.8800
  • 500:$3.0300
  • 100:$3.1600
  • 25:$3.2900
  • 1:$3.5500
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5		Infineon Technologies AG650V 119A 395W TO247-4
RoHS: Compliant		235
  • 1:€6.6500
  • 10:€3.6500
  • 50:€2.6500
  • 100:€2.5500
Bild Teil # Beschreibung
IGZ75N65H5XKSA1

Mfr.#: IGZ75N65H5XKSA1

OMO.#: OMO-IGZ75N65H5XKSA1

 IGBT Transistors IGBT PRODUCTS
IGZ75N65H5

Mfr.#: IGZ75N65H5

OMO.#: OMO-IGZ75N65H5-1190

 650V,85A,High Speed IGBT
IGZ75N65H5XKSA1

Mfr.#: IGZ75N65H5XKSA1

OMO.#: OMO-IGZ75N65H5XKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V 75A SGL TO-247-4
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IGZ75N65H5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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