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2SK3354-AZ

2SK3354-AZ
Mfr. #:
2SK3354-AZ
Hersteller:
Renesas Electronics Corporation
Beschreibung:
Trans MOSFET N-CH 60V 83A 3-Pin(3+Tab) TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SK3354-AZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SK3354, 2SK335, 2SK33, 2SK3, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 60V 83A 3-Pin TO-220AB
***ical
Trans MOSFET N-CH 60V 83A 3-Pin(3+Tab) TO-220AB
***ponent Stockers USA
83 A 60 V 0.012 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***el Electronic
Nch Single Power MOSFET 60V 83A 8.0mohm MP-25/TO-220AB
***(Formerly Allied Electronics)
MOSFET, 55V, 104A, 8 mOhm, 86.7 nC Qg, Logic Level, TO-220AB
***ure Electronics
Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
***ment14 APAC
MOSFET, N, 55V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***(Formerly Allied Electronics)
IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***roFlash
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
***ure Electronics
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 100V 88A 10mΩ 175°C TO-220 IRFB4410PBF
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J +/-5%
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ark
MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous D
***(Formerly Allied Electronics)
SUP90N04-3M3P-GE3 N-channel MOSFET Transistor; 90 A; 40 V; 3-Pin TO-220AB
***ment14 APAC
MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***et Europe
Trans MOSFET N-CH 30V 85A 3-Pin(3+Tab) TO-220AB
***ronik
MOSFET 30V 85A 3.6mOhm TO220 RoHSconf
***ment14 APAC
MOSFET,N CH,W DIODE,30V,85A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
2SK3354-AZ
DISTI # 30587857		Renesas Electronics CorporationTrans MOSFET N-CH 60V 83A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		63
  • 11:$1.5682
2SK3354-AZ
DISTI # C1S525000546597		Renesas Electronics CorporationTrans MOSFET N-CH 60V 83A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		63
  • 10:$1.2300
  • 1:$1.9800
Bild Teil # Beschreibung
2SK3320-BL(TE85L,F

Mfr.#: 2SK3320-BL(TE85L,F

OMO.#: OMO-2SK3320-BL-TE85L-F

 JFET Junction FET N-Ch x2 1.2V to 14mA 10mA
2SK3303-01,K3303

Mfr.#: 2SK3303-01,K3303

OMO.#: OMO-2SK3303-01-K3303-1190

 Neu und Original
2SK3305-S-AZ

Mfr.#: 2SK3305-S-AZ

OMO.#: OMO-2SK3305-S-AZ-1190

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK3320-BL(TE85L,F)

Mfr.#: 2SK3320-BL(TE85L,F)

OMO.#: OMO-2SK3320-BL-TE85L-F--1190

 Neu und Original
2SK3354-AZ

Mfr.#: 2SK3354-AZ

OMO.#: OMO-2SK3354-AZ-1190

 Trans MOSFET N-CH 60V 83A 3-Pin(3+Tab) TO-220AB
2SK3367-Z-E1-AZ

Mfr.#: 2SK3367-Z-E1-AZ

OMO.#: OMO-2SK3367-Z-E1-AZ-1190

 Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 T/R
2SK33720RL+/1H

Mfr.#: 2SK33720RL+/1H

OMO.#: OMO-2SK33720RL-1H-1190

 Neu und Original
2SK3372GSL , MAX8532TTQ

Mfr.#: 2SK3372GSL , MAX8532TTQ

OMO.#: OMO-2SK3372GSL-MAX8532TTQ-1190

 Neu und Original
2SK3377(0)-Z-E1-AZ

Mfr.#: 2SK3377(0)-Z-E1-AZ

OMO.#: OMO-2SK3377-0--Z-E1-AZ-RENESAS-ELECTRONICS-AMERICA

 Neu und Original
2SK3391JXTL

Mfr.#: 2SK3391JXTL

OMO.#: OMO-2SK3391JXTL-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von 2SK3354-AZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,84 $
1,84 $
10
1,75 $
17,53 $
100
1,66 $
166,05 $
500
1,57 $
784,15 $
1000
1,48 $
1 476,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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