FS45MR12W1M1B11BOMA1

FS45MR12W1M1B11BOMA1
Mfr. #:
FS45MR12W1M1B11BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
Discrete Semiconductor Modules
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS45MR12W1M1B11BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FS45MR12W1M1B11BOMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungs-MOSFET-Module
Typ:
EasyPACK-Modul
Vf - Durchlassspannung:
4.6 V
Vgs - Gate-Source-Spannung:
- 10 V, 20 V
Montageart:
Schraubbefestigung
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Aufbau:
Verhexen
Marke:
Infineon-Technologien
Polarität des Transistors:
N-Kanal
Abfallzeit:
16.4 ns
Id - Kontinuierlicher Drainstrom:
25 A
Pd - Verlustleistung:
20 mW
Produktart:
Diskrete Halbleitermodule
Rds On - Drain-Source-Widerstand:
45 mOhms
Anstiegszeit:
6.3 ns
Werkspackungsmenge:
24
Unterkategorie:
Diskrete Halbleitermodule
Typische Ausschaltverzögerungszeit:
35.2 ns
Typische Einschaltverzögerungszeit:
8.2 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
3.45 V
Teil # Aliase:
SP001686600
Tags
FS45, FS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
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DISTI # FS45MR12W1M1B11BOMA1-ND
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DISTI # FS45MR12W1M1B11BOMA1
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DISTI # 93AC7024
Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 25A,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes72
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FS45MR12W1M1B11BOMA1
DISTI # 726-FS45MR12W1M1B11B
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Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 25A
RoHS: Compliant
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Bild Teil # Beschreibung
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Discrete Semiconductor Modules EasyDUAL 2B 1200 V, 8 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
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OMO.#: OMO-IKY40N120CH3XKSA1

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Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505-GHI-ELECTRONICS

Beagle Bone Black
Verfügbarkeit
Aktie:
46
Auf Bestellung:
2029
Menge eingeben:
Der aktuelle Preis von FS45MR12W1M1B11BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
138,19 $
138,19 $
5
135,48 $
677,40 $
10
129,16 $
1 291,60 $
25
126,45 $
3 161,25 $
Beginnen mit
Neueste Produkte
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