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IPP65R190C6XKSA1

IPP65R190C6XKSA1
Mfr. #:
IPP65R190C6XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 20.2A TO220-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP65R190C6XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
20.2 A
Rds On - Drain-Source-Widerstand:
170 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
73 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
151 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
CoolMOS C6
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
133 ns
Teil # Aliase:
IPP65R190C6 IPP65R19C6XK SP000849360
Gewichtseinheit:
0.211644 oz
Tags
IPP65R190C, IPP65R19, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220 Tube
***ical
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220
***et Europe
Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube
***Components
MOSFET N-Ch 700V 20.2A CoolMOS C6 TO-220
***i-Key
MOSFET N-CH 650V 20.2A TO220
***ark
Mosfet, N-Ch, 650V, 20.2A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 20.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:151W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C6 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 20,2A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:20.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.17ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:151W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPP65R190C6XKSA1
DISTI # IPP65R190C6XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$2.0754
IPP65R190C6XKSA1
DISTI # IPP65R190C6XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190C6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.5900
  • 1000:$1.4900
  • 2000:$1.4900
  • 3000:$1.3900
  • 5000:$1.3900
IPP65R190C6XKSA1
DISTI # 49AC0303		Infineon Technologies AGMOSFET, N-CH, 650V, 20.2A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes467
  • 500:$1.8900
  • 250:$2.1100
  • 100:$2.2200
  • 50:$2.3300
  • 25:$2.4500
  • 10:$2.5600
  • 1:$3.0100
IPP65R190C6XKSA1
DISTI # 726-IPP65R190C6XKSA1		Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO220-3
RoHS: Compliant		0
  • 1:$3.0000
  • 10:$2.5500
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
  • 1000:$1.5900
  • 2500:$1.5100
  • 5000:$1.4500
IPP65R190C6
DISTI # 726-IPP65R190C6		Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO220-3
RoHS: Compliant		0
  • 1:$3.0000
  • 10:$2.5500
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
IPP65R190C6XKSA1
DISTI # 2839471		Infineon Technologies AGMOSFET, N-CH, 650V, 20.2A, TO-220
RoHS: Compliant		467
  • 1000:$2.4200
  • 500:$2.5500
  • 250:$2.6900
  • 100:$2.8400
  • 10:$3.2100
  • 1:$3.4400
IPP65R190C6XKSA1
DISTI # 2839471		Infineon Technologies AGMOSFET, N-CH, 650V, 20.2A, TO-220
RoHS: Compliant		470
  • 500:£1.4600
  • 250:£1.6200
  • 100:£1.7100
  • 10:£1.9800
  • 1:£2.6200
Bild Teil # Beschreibung
IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190E6

Mfr.#: IPP65R190E6

OMO.#: OMO-IPP65R190E6

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C6XKSA1

Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C6

Mfr.#: IPP65R190C6

OMO.#: OMO-IPP65R190C6

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190CFDXKSA2

Mfr.#: IPP65R190CFDXKSA2

OMO.#: OMO-IPP65R190CFDXKSA2-INFINEON-TECHNOLOGIES

 HIGH POWER_LEGACY
IPP65R190C6

Mfr.#: IPP65R190C6

OMO.#: OMO-IPP65R190C6-1190

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190CFD 65F6190

Mfr.#: IPP65R190CFD 65F6190

OMO.#: OMO-IPP65R190CFD-65F6190-1190

 Neu und Original
IPP65R190CFD,65R190C

Mfr.#: IPP65R190CFD,65R190C

OMO.#: OMO-IPP65R190CFD-65R190C-1190

 Neu und Original
IPP65R190CFDAAKSA1

Mfr.#: IPP65R190CFDAAKSA1

OMO.#: OMO-IPP65R190CFDAAKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V TO-220-3
IPP65R190C6XKSA1

Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 20.2A TO220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IPP65R190C6XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,00 $
3,00 $
10
2,55 $
25,50 $
100
2,21 $
221,00 $
250
2,10 $
525,00 $
500
1,88 $
940,00 $
1000
1,59 $
1 590,00 $
2500
1,51 $
3 775,00 $
5000
1,45 $
7 250,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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