CXDM1002N TR

CXDM1002N TR
Mfr. #:
CXDM1002N TR
Hersteller:
Central Semiconductor
Beschreibung:
Darlington Transistors MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CXDM1002N TR Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
CXDM1002N TR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CXDM10
Verpackung
Spule
Gewichtseinheit
0.004603 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-89-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
2 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.1 V
Rds-On-Drain-Source-Widerstand
140 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
50 ns
Typische-Einschaltverzögerungszeit
32 ns
Qg-Gate-Ladung
6 nC
Kanal-Modus
Erweiterung
Tags
CXDM, CXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-Channel Enhancement Mode MOSFET High Voltage 100V 2A 3-Pin SOT-89 T/R
***i-Key
MOSFET N-CH 100V 2A SOT-89
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Teil # Mfg. Beschreibung Aktie Preis
CXDM1002N TR
DISTI # CXDM1002NCT-ND
Central Semiconductor CorpMOSFET N-CH 100V 2A SOT-89
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2340In Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
CXDM1002N TR
DISTI # CXDM1002NDKR-ND
Central Semiconductor CorpMOSFET N-CH 100V 2A SOT-89
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2340In Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
CXDM1002N TR
DISTI # CXDM1002NTR-ND
Central Semiconductor CorpMOSFET N-CH 100V 2A SOT-89
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 1000:$0.4950
CXDM1002N TR
DISTI # CXDM1002N TR
Central Semiconductor CorpN-Channel Enhancement Mode MOSFET High Voltage 100V 2A 3-Pin SOT-89 T/R - Tape and Reel (Alt: CXDM1002N TR)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$0.3939
  • 4000:$0.3769
  • 6000:$0.3679
  • 10000:$0.3589
  • 20000:$0.3429
CXDM1002N TR
DISTI # 610-CXDM1002NTR
Central Semiconductor CorpMOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
RoHS: Compliant
2237
  • 1:$0.9500
  • 10:$0.7750
  • 100:$0.6460
  • 500:$0.4990
  • 1000:$0.4500
  • 2000:$0.3990
  • 10000:$0.3850
Bild Teil # Beschreibung
CXDM1002N TR

Mfr.#: CXDM1002N TR

OMO.#: OMO-CXDM1002N-TR

MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
CXDM1002N

Mfr.#: CXDM1002N

OMO.#: OMO-CXDM1002N-1190

Neu und Original
CXDM1002N TR

Mfr.#: CXDM1002N TR

OMO.#: OMO-CXDM1002N-TR-CENTRAL-SEMICONDUCTOR

Darlington Transistors MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von CXDM1002N TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,51 $
0,51 $
10
0,49 $
4,89 $
100
0,46 $
46,29 $
500
0,44 $
218,60 $
1000
0,41 $
411,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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