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IXFN60N80P

IXFN60N80P
Mfr. #:
IXFN60N80P
Hersteller:
Littelfuse
Beschreibung:
MOSFET N-CH 800V 53A SOT-227B
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN60N80P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFN60N80P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Modul
Serie
PolarHV
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
SMD/SMT
Handelsname
HyperFET
Paket-Koffer
SOT-227-4, miniBLOC
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Chassishalterung
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
SOT-227B
Aufbau
Single Dual Source
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1040W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
800V
Eingangskapazität-Ciss-Vds
18000pF @ 25V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
53A
Rds-On-Max-Id-Vgs
140 mOhm @ 30A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Lade-Qg-Vgs
250nC @ 10V
Pd-Verlustleistung
1040 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
26 ns
Anstiegszeit
29 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
53 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Widerstand
140 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
110 ns
Typische-Einschaltverzögerungszeit
36 ns
Kanal-Modus
Erweiterung
Tags
IXFN60, IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 800V 53A 4-Pin SOT-227B
***ukat
N-Ch 800V 53A 1040W 0,14R SOT227B
***ark
Mosfet, N Channel, 800V, 53A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:53A; On Resistance Rds(On):0.14Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFN60N80P
DISTI # V79:2366_19815502		IXYS CorporationTrans MOSFET N-CH 800V 53A 4-Pin SOT-227B
RoHS: Compliant		3
  • 500:$18.7000
  • 250:$19.5200
  • 100:$21.4800
  • 25:$23.3400
  • 10:$25.6400
  • 1:$27.9600
IXFN60N80P
DISTI # V36:1790_15877430		IXYS CorporationTrans MOSFET N-CH 800V 53A 4-Pin SOT-227B
RoHS: Compliant		0
  • 5000:$16.3700
  • 1000:$18.0100
  • 100:$21.8300
  • 10:$22.5300
IXFN60N80P
DISTI # IXFN60N80P-ND		IXYS CorporationMOSFET N-CH 800V 53A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube		161In Stock
  • 500:$19.3890
  • 100:$22.1990
  • 30:$23.8850
  • 10:$25.9930
  • 1:$28.1000
IXFN60N80P
DISTI # 26703217		IXYS CorporationTrans MOSFET N-CH 800V 53A 4-Pin SOT-227B
RoHS: Compliant		3
  • 1:$27.9600
IXFN60N80P
DISTI # 58M7624		IXYS CorporationMOSFET, N CHANNEL, 800V, 53A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes10
  • 1:$15.2400
  • 5:$15.2400
  • 10:$15.2400
  • 25:$15.2400
  • 50:$15.2400
  • 100:$15.2400
  • 250:$15.2400
IXFN60N80P
DISTI # 747-IXFN60N80P		IXYS CorporationMOSFET DIODE Id54 BVdass800
RoHS: Compliant		99
  • 1:$28.1000
  • 5:$26.7000
  • 10:$25.9900
  • 25:$23.8800
  • 50:$22.8700
  • 100:$22.1900
  • 200:$20.3700
IXFN60N80PIXYS Corporation53 A, 800 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET76
  • 64:$15.1560
  • 31:$15.7875
  • 1:$16.4190
IXFN60N80P
DISTI # 194350		IXYS CorporationMOSFET N-CHANNEL 800V 53A SOT227B, EA558
  • 20:£16.5400
  • 10:£16.8800
  • 5:£17.4900
  • 2:£18.3100
  • 1:£20.3400
IXFN60N80PIXYS Corporation 300
    IXFN60N80P
    DISTI # IXFN60N80P    		IXYS CorporationModule,single transistor,800V,53A,SOT227B,Ugs: ±30V,screw8
    • 10:$23.0900
    • 3:$26.2400
    • 1:$29.0500
    IXFN60N80P
    DISTI # IXFN60N80P    		IXYS CorporationN-Ch 800V 53A 1040W 0,14R SOT227B
    RoHS: Compliant    		48
    • 1:€22.2000
    • 5:€19.2000
    • 10:€18.2000
    • 25:€17.5500
    IXFN60N80P
    DISTI # 1427326    		IXYS CorporationMOSFET, N, SOT-227B168
    • 100:£16.3400
    • 50:£18.6900
    • 10:£19.1600
    • 5:£21.8200
    • 1:£22.5300
    IXFN60N80P
    DISTI # 1427326    		IXYS CorporationMOSFET, N, SOT-227B
    RoHS: Compliant    		171
    • 100:$33.4600
    • 30:$36.0000
    • 10:$39.1800
    • 1:$42.3500
    Bild Teil # Beschreibung
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    IXFN60N80P

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    IXFN64N60P

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    OMO.#: OMO-IXFN64N60P-IXYS-CORPORATION

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IXFN60N80P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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