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MSC010SDA070K

MSC010SDA070K
Mfr. #:
MSC010SDA070K
Hersteller:
Microchip / Microsemi
Beschreibung:
Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MSC010SDA070K Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MSC010SDA070K Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-2
Wenn - Vorwärtsstrom:
10 A
Vrrm - Repetitive Sperrspannung:
700 V
Vf - Durchlassspannung:
1.5 V
Aufbau:
Single
Technologie:
SiC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
MSC0
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
1
Unterkategorie:
Dioden & Gleichrichter
Vr - Sperrspannung:
700 V
Tags
MSC010S, MSC010, MSC01, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
DIODE SCHOTTKY 700V 10A TO220-3
***hardson RFPD
SILICON CARBIDE DIODE
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Bild Teil # Beschreibung
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

 Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
MSC010SDA120B

Mfr.#: MSC010SDA120B

OMO.#: OMO-MSC010SDA120B

 Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
MSC010SDA070K

Mfr.#: MSC010SDA070K

OMO.#: OMO-MSC010SDA070K

 Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
MSC010-A0-0004

Mfr.#: MSC010-A0-0004

OMO.#: OMO-MSC010-A0-0004-1190

 Neu und Original
MSC010A04074

Mfr.#: MSC010A04074

OMO.#: OMO-MSC010A04074-1190

 Neu und Original
MSC010SDA120B

Mfr.#: MSC010SDA120B

OMO.#: OMO-MSC010SDA120B-MICROSEMI

 SILICON CARBIDE DIODE
Verfügbarkeit
Aktie:
185
Auf Bestellung:
2168
Menge eingeben:
Der aktuelle Preis von MSC010SDA070K dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,35 $
5,35 $
5
5,07 $
25,35 $
10
4,88 $
48,80 $
25
4,69 $
117,25 $
50
4,52 $
226,00 $
100
4,15 $
415,00 $
250
4,00 $
1 000,00 $
500
3,86 $
1 930,00 $
1000
3,54 $
3 540,00 $
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