STGFW30H65FB

Mfr. #:: STGFW30H65FB
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGFW30H65FB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STGFW30H65FB Mehr Informationen STGFW30H65FB Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: TO-3PF

Montageart:: Durchgangsloch

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 650 V

Kollektor-Emitter-Sättigungsspannung:: 1.55 V

Maximale Gate-Emitter-Spannung:: 20 V

Kontinuierlicher Kollektorstrom bei 25 C:: 60 A

Pd - Verlustleistung:: 58 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Serie:: STGFW30H65FB

Verpackung:: Rohr

Kontinuierlicher Kollektorstrom Ic Max:: 30 A

Marke:: STMicroelectronics

Gate-Emitter-Leckstrom:: 250 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 300

Unterkategorie:: IGBTs

Gewichtseinheit:: 0.245577 oz

Tags: STGFW30, STGFW3, STGFW, STGF, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGFW30H65FB Beschreibung

***ical: Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***S: French Electronic Distributor since 1988

***ure Electronics: STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***el Electronic: STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins

***nell: IGBT, SINGLE, 650V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi

***ark: Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***nell: IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube

***ark: Transistor, Igbt, 600V, 60A, To-3P Rohs Compliant: Yes

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

***(Formerly Allied Electronics): IGBT 600V 30A Trench Field-Stop TO-3P

***ure Electronics: NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247

***et: Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube

***emi: IGBT, 650V 30A FS2 Induction Heating

***ark: 650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 650V 60A TO247-3

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***-Wing Technology: Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns

***nell: IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No

***ineon: Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***ark: IGBT, SINGLE, 650V, 60A, TO-247AC

***ineon: Target Applications: Pump; Solar; UPS; Welding

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***S: French Electronic Distributor since 1988

STGFW30H65FB Mehr Informationen

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGFW30H65FB DISTI # 497-15123-5-ND	STMicroelectronics	IGBT 650V 60A 58W TO3PF RoHS: Compliant Min Qty: 1 Container: Tube	291In Stock	1020:$1.8081 510:$2.1439 120:$2.5184 30:$2.9060 1:$3.4200
STGFW30H65FB DISTI # STGFW30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube - Rail/Tube (Alt: STGFW30H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$1.7900 1200:$1.6900 1800:$1.5900 3000:$1.5900 6000:$1.4900
STGFW30H65FB DISTI # STGFW30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube (Alt: STGFW30H65FB) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 0	30:€1.6900 60:€1.6900 120:€1.5900 180:€1.4900 300:€1.3900
STGFW30H65FB DISTI # 511-STGFW30H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed RoHS: Compliant	0	600:$2.0400 1200:$1.7200 3000:$1.6300
STGFW30H65FB	STMicroelectronics		300
STGFW30H65FB DISTI # IGBT1872	STMicroelectronics	IGBT 650V 30A TO-3PF	Stock DE - 0Stock HK - 0Stock US - 0	600:$1.8200
STGFW30H65FB	STMicroelectronics	Insulated Gate Bipolar Transistor RoHS: Compliant	Europe - 600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: STGFW30V60DF OMO.#: OMO-STGFW30V60DF	IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
	Mfr.#: STGFW30V60F OMO.#: OMO-STGFW30V60F	IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
	Mfr.#: STGFW30H65FB OMO.#: OMO-STGFW30H65FB	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
	Mfr.#: STGFW30NC60V OMO.#: OMO-STGFW30NC60V	IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
	Mfr.#: STGFW35HF60W OMO.#: OMO-STGFW35HF60W-STMICROELECTRONICS	IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
	Mfr.#: STGFW30NC60V OMO.#: OMO-STGFW30NC60V-STMICROELECTRONICS	IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
	Mfr.#: STGFW30H65FB OMO.#: OMO-STGFW30H65FB-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGFW30V60DF OMO.#: OMO-STGFW30V60DF-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGFW30V60F OMO.#: OMO-STGFW30V60F-STMICROELECTRONICS	IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von STGFW30H65FB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

600: ~~2,04 $~~; ~~1 224,00 $~~

1200: ~~1,72 $~~; ~~2 064,00 $~~

2700: ~~1,63 $~~; ~~4 401,00 $~~

5100: ~~1,57 $~~; ~~8 007,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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STGFW30H65FB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes