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SIHH21N65EF-T1-GE3

SIHH21N65EF-T1-GE3
Mfr. #:
SIHH21N65EF-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHH21N65EF-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH21N65EF-T1-GE3 DatasheetSIHH21N65EF-T1-GE3 Datasheet (P4-P6)SIHH21N65EF-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHH21N65EF-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-8x8-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
20.3 A
Rds On - Drain-Source-Widerstand:
148 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
66 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
EF
Marke:
Vishay / Siliconix
Abfallzeit:
44 ns
Produktart:
MOSFET
Anstiegszeit:
46 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
69 ns
Typische Einschaltverzögerungszeit:
26 ns
Tags
SIHH21N65, SIHH21, SIHH2, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK EP T/R
***ronik
N-CH 700V 19,8A 157mOhm PPAK8x8
***ark
Mosfet, N-Ch, 650V, 19.8A, Powerpak-5; Transistor Polarity:n Channel; Continuous Drain Current Id:19.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.157Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ure Electronics
N-Channel 600 V 135 mOhm 77 nC SMT E Series Power Mosfet - PowerPAK 8x8
***el Electronic
VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
***nell
MOSFET, N-CH, 600V, 25A, POWERPAK-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.117ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK
***nell
MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
*** Source Electronics
MOSFET N-CH 600V 21A D2PAK / Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 600 V 0.16 Ohm Surface Mount FDmesh II Power MosFet - D2PAK
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 650V, 17A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
*** Source Electronics
MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
***roFlash
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ark
Channel Type:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
*** Electronics
VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ure Electronics
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Teil # Mfg. Beschreibung Aktie Preis
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 650V 19.8A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3661In Stock
  • 1000:$3.5727
  • 500:$4.1020
  • 100:$4.7106
  • 10:$5.6900
  • 1:$6.3000
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 650V 19.8A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3661In Stock
  • 1000:$3.5727
  • 500:$4.1020
  • 100:$4.7106
  • 10:$5.6900
  • 1:$6.3000
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 650V 19.8A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$3.4172
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R (Alt: SIHH21N65EF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 30000:€2.9900
  • 18000:€3.1900
  • 12000:€3.5900
  • 6000:€4.3900
  • 3000:€5.5900
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH21N65EF-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$3.0900
  • 18000:$3.1900
  • 12000:$3.2900
  • 6000:$3.3900
  • 3000:$3.4900
SIHH21N65EF-T1-GE3
DISTI # 01AC4964		Vishay IntertechnologiesMOSFET, N-CH, 650V, 19.8A, POWERPAK-5,Transistor Polarity:N Channel,Continuous Drain Current Id:19.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.157ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes21
  • 500:$3.3900
  • 250:$3.6600
  • 100:$3.8500
  • 50:$4.3400
  • 25:$4.6900
  • 10:$5.4300
  • 1:$5.7000
SIHH21N65EF-T1-GE3
DISTI # 20AC3833		Vishay IntertechnologiesN-CHANNEL 650V0
  • 20000:$3.0100
  • 12000:$3.0600
  • 8000:$3.1900
  • 4000:$3.4300
  • 2000:$3.6700
  • 1:$3.8500
SIHH21N65EF-T1-GE3
DISTI # 78-SIHH21N65EF-T1GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant		0
  • 1:$6.8600
  • 10:$5.6800
  • 100:$4.6800
  • 250:$4.5300
  • 500:$4.0700
  • 1000:$3.4300
  • 3000:$3.2600
SIHH21N65EF-T1-GE3
DISTI # 2576523		Vishay IntertechnologiesMOSFET, N-CH, 650V, 19.8A, POWERPAK-5
RoHS: Compliant		21
  • 1000:$5.3900
  • 500:$6.1900
  • 100:$7.1000
  • 10:$8.5800
  • 1:$9.4900
SIHH21N65EF-T1-GE3
DISTI # 2576523		Vishay IntertechnologiesMOSFET, N-CH, 650V, 19.8A, POWERPAK-521
  • 1:£2.2700
SIHH21N65EF-T1-GE3
DISTI # TMOS1216		Vishay IntertechnologiesN-CH 700V 19,8A 157mOhm PPAK8x8
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$3.6900
SIHH21N65EF-T1-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SIHH21N65EF-T1-GE3

    Mfr.#: SIHH21N65EF-T1-GE3

    OMO.#: OMO-SIHH21N65EF-T1-GE3

    		 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
    SIHH21N65E-T1-GE3

    Mfr.#: SIHH21N65E-T1-GE3

    OMO.#: OMO-SIHH21N65E-T1-GE3

    		 MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
    SIHH21N65EF

    Mfr.#: SIHH21N65EF

    OMO.#: OMO-SIHH21N65EF-1190

    		 Neu und Original
    SIHH21N65E-T1-GE3

    Mfr.#: SIHH21N65E-T1-GE3

    OMO.#: OMO-SIHH21N65E-T1-GE3-VISHAY

    		 Trans MOSFET N-CH 650V 20.3A 4-Pin PowerPAK EP T/R
    SIHH21N65EF-T1-GE3

    Mfr.#: SIHH21N65EF-T1-GE3

    OMO.#: OMO-SIHH21N65EF-T1-GE3-VISHAY

    		 MOSFET N-CH 650V 19.8A POWERPAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SIHH21N65EF-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,86 $
    6,86 $
    10
    5,68 $
    56,80 $
    100
    4,68 $
    468,00 $
    250
    4,53 $
    1 132,50 $
    500
    4,07 $
    2 035,00 $
    1000
    3,43 $
    3 430,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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