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IRGB4B60KD1PBF

IRGB4B60KD1PBF
Mfr. #:
IRGB4B60KD1PBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V Low-Vceon Non Punch Through
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGB4B60KD1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB4B60KD1PBF DatasheetIRGB4B60KD1PBF Datasheet (P4-P6)IRGB4B60KD1PBF Datasheet (P7-P9)IRGB4B60KD1PBF Datasheet (P10-P12)IRGB4B60KD1PBF Datasheet (P13-P15)IRGB4B60KD1PBF Datasheet (P16)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB
Aufbau
Single
Leistung max
63W
Reverse-Recovery-Time-trr
93ns
Strom-Kollektor-Ic-Max
11A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
22A
Vce-on-Max-Vge-Ic
2.5V @ 15V, 4A
Schaltenergie
73μJ (on), 47μJ (off)
Gate-Gebühr
12nC
Td-ein-aus-25°C
22ns/100ns
Testbedingung
400V, 4A, 100 Ohm, 15V
Pd-Verlustleistung
63 W
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.5 V
Kontinuierlicher Kollektorstrom-bei-25-C
12 A
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
IRGB4B, IRGB4, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
***et
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220AB
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Pump; Refridgeration; Solar
***roFlash
IGBT; Transistor Polarity: N Channel; Collector Emitter Voltage, Vceo: 600V; Collector Emitter Saturation Voltage,...
***or
IRGB4B60K - IGBT WITH ULTRAFAST
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
IRGIB6B60 Series 600 V 11 A Insulated Gate Bipolar Transistor - TO-220FP
***ineon
Target Applications: Dishwasher; Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ark
IGBT; Transistor Type:IGBT; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***nell
IGBT, 600V, 9A, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.2V; Power Dissipation:32W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:22A; Power, Pd:32W; Time, Fall:22ns; Time, Fall Max:22ns; Time, Rise:17ns
***ical
Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin(3+Tab) TO-220FP Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF14NC60KD IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins
***ark
IGBT, TO-220FP; Continuous Collector Current:11A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:28W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
***ure Electronics
IRGIB7B60 Series 600 V 8 A N-Channel UltraFast IGBT - TO-220AB
***Yang
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ment14 APAC
IGBT, 600V, 12A, TO-220FP; Transistor Type:IGBT; DC Collector Current:12A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:12A; Fall Time Max:42ns; Fall Time tf:42ns; Package / Case:TO-220FP; Power Dissipation Max:39W; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulsed Current Icm:24A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-220AB package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V
***ical
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF7NC60HD Series 600 V 10 A N-Channel Very Fast PowerMESH IGBT - TO-220FP
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UD series si designed for applications such as motor control and general inverters where high speed switching is a required feature.
Teil # Mfg. Beschreibung Aktie Preis
IRGB4B60KD1PBF
DISTI # IRGB4B60KD1PBF-ND		Infineon Technologies AGIGBT 600V 11A 63W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    IRGB4B60KD1PBF
    DISTI # 70017212    		Infineon Technologies AG600V Low-VCEON Non Punch Through COPACK IGBT IN A TO-220 FULLPAK Package
    RoHS: Compliant    		0
    • 500:$3.4600
    • 1000:$3.3910
    • 2500:$3.2870
    • 5000:$3.1490
    • 12500:$2.9410
    IRGB4B60KD1PBF
    DISTI # 942-IRGB4B60KD1PBF    		Infineon Technologies AGIGBT Transistors 600V Low-Vceon Non Punch Through
    RoHS: Compliant    		9
    • 1:$1.8800
    • 10:$1.6000
    • 100:$1.2800
    • 500:$1.1200
    • 1000:$0.9270
    • 2500:$0.8630
    • 5000:$0.8310
    • 10000:$0.7990
    IRGB4B60KD1PBFInternational Rectifier 200
      Bild Teil # Beschreibung
      IRGB4B60KPBF

      Mfr.#: IRGB4B60KPBF

      OMO.#: OMO-IRGB4B60KPBF

      		 IGBT Transistors 600V Low VCEon
      IRGB4B60KD1PBF

      Mfr.#: IRGB4B60KD1PBF

      OMO.#: OMO-IRGB4B60KD1PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 600V Low-Vceon Non Punch Through
      IRGB4B60KPBF

      Mfr.#: IRGB4B60KPBF

      OMO.#: OMO-IRGB4B60KPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 600V Low VCEon
      IRGB4B60K

      Mfr.#: IRGB4B60K

      OMO.#: OMO-IRGB4B60K-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von IRGB4B60KD1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,20 $
      1,20 $
      10
      1,14 $
      11,39 $
      100
      1,08 $
      107,87 $
      500
      1,02 $
      509,35 $
      1000
      0,96 $
      958,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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