IRF6645TR1PBF

Mfr. #:: IRF6645TR1PBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT 100V 25A 35mOhm 14nC Qg
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF6645TR1PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6645TR1PBF Datasheet IRF6645TR1PBF Datasheet (P4-P6)IRF6645TR1PBF Datasheet (P7-P9)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DirectFET-SJ

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 5.7 A

Rds On - Drain-Source-Widerstand:: 28 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4.9 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 14 nC

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 42 W

Aufbau:: Single

Verpackung:: Spule

Höhe:: 0.7 mm

Länge:: 4.85 mm

Transistortyp:: 1 N-Channel

Breite:: 3.95 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 7.4 S

Abfallzeit:: 5.1 ns

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Anstiegszeit:: 5 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001574778

Gewichtseinheit:: 0.017637 oz

Tags: IRF6645T, IRF6645, IRF664, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6645TR1PBF Beschreibung

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 28 Milliohms;ID 5.7A;SJ;PD 3W;VGS +/-20V

***ure Electronics: Single N-Channel 100 V 35 mOhm 14 nC HEXFET® Power Mosfet - DirectFET®

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:4.5A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SJ ;RoHS Compliant: Yes

***ernational Rectifier: A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***emi: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 26A, 34mΩ

*** Stop Electro: Power Field-Effect Transistor, 6A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 100V, 26A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ure Electronics: N-Channel 100 V 2.25 mOhm OptiMOS2 Power-Transistor - PG-TDSON-8

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 40A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:78W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***icroelectronics: N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

***ical: Trans MOSFET N-CH 100V 7A 8-Pin Power Flat EP T/R

***el Electronic: Power Management Specialized - PMIC PMUIC W/4 BUCK 12 LDO RG

***icroelectronics SCT: Power MOSFETs, 100V, 7A, PowerFLAT 3.3x3.3, Tape and Reel

***ment14 APAC: MOSFET, N-CH, 100V, 7A, 150DEG C, 50W;

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 22Milliohms; ID 6.9A; SO-8; PD 2.5W; VGS +/-20

***ure Electronics: IRF7473PbF Series N-Channel 100 V 26 mOhm 2.5 W HEXFET Power MOSFET - SOIC-8

***ical: Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm;

***nell: MOSFET N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.9A; Fall Time tf: 11ns; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 55A; Rise Time: 20ns; Termination Type: Surface Mount Device; Voltage Vgs Max: 20V

*** Electronics: In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor

***emi: PowerTrench® MOSFET, N-Channel, 100 V, 29 A, 36 mΩ

*** Stop Electro: Power Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: Using Fairchild's proprietary high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF6645TR1PBF DISTI # IRF6645TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 100V 5.7A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6645TR1PBF DISTI # IRF6645TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 100V 5.7A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6645TR1PBF DISTI # IRF6645TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 5.7A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6645TR1PBF DISTI # 70017396	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 28 Milliohms,ID 5.7A,SJ,PD 3W,VGS +/-20V RoHS: Compliant	0	1000:$1.7300 2000:$1.5800
IRF6645TR1PBF	Infineon Technologies AG	Single N-Channel 100 V 35 mOhm 14 nC HEXFET Power Mosfet - DirectFET RoHS: Compliant	138Cut Tape/Mini-Reel	1:$1.5500 30:$1.4700 300:$1.2000
IRF6645TR1PBF DISTI # 942-IRF6645TR1PBF	Infineon Technologies AG	MOSFET MOSFT 100V 25A 35mOhm 14nC Qg RoHS: Compliant	0
IRF6645TR1PBF	International Rectifier	5.7 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET	43	8:$2.6250 3:$3.5000 1:$5.2500
IRF6645TR1PBF	International Rectifier	RoHS: Compliant	1000
IRF6645TR1PBF DISTI # 1436927	Infineon Technologies AG	MOSFET, N, DIRECTFET, 100V, SJ RoHS: Compliant	0	10000:$1.8700 5000:$1.9700 2000:$2.0400 1000:$2.1900 500:$2.4700 100:$2.7700 10:$3.4200 1:$4.1500
IRF6645TR1PBF DISTI # XSFP00000020622	Infineon Technologies AG	RoHS: Compliant	74 in Stock0 on Order	74:$2.0700 65:$2.2100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF6648TRPBF OMO.#: OMO-IRF6648TRPBF	MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
	Mfr.#: IRF6644TR1PBF OMO.#: OMO-IRF6644TR1PBF	MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
	Mfr.#: IRF6644TRPBF OMO.#: OMO-IRF6644TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10.3A DIRECTFET
	Mfr.#: IRF6645TR1PBF-CUT TAPE OMO.#: OMO-IRF6645TR1PBF-CUT-TAPE-1190	Neu und Original
	Mfr.#: IRF6644 OMO.#: OMO-IRF6644-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V DIRECTFET-MN
	Mfr.#: IRF6645TR1PBF OMO.#: OMO-IRF6645TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 5.7A DIRECTFET
	Mfr.#: IRF6641PBF OMO.#: OMO-IRF6641PBF-1190	Neu und Original
	Mfr.#: IRF6645TR OMO.#: OMO-IRF6645TR-1190	Neu und Original
	Mfr.#: IRF6648TR1PBF OMO.#: OMO-IRF6648TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 86A DIRECTFET
	Mfr.#: IRF6643TR1PBF OMO.#: OMO-IRF6643TR1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von IRF6645TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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IRF6645TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes