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SKM145GAL176D

SKM145GAL176D
Mfr. #:
SKM145GAL176D
Hersteller:
SEMIKRON
Beschreibung:
SEMITRANS, 1700V, 100A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM145GAL176D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
Modul
Tags
SKM145GAL1, SKM145GAL, SKM145GA, SKM14, SKM1, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
POWER IGBT TRANSISTOR
***(Formerly Allied Electronics)
SEMITRANS; 1700V; 100A
***ikron
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives mains 575 - 750 V AC Public transport (auxiliary systems
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
***ical
Trans IGBT Module N-CH 1200V 50A 280000mW 28-Pin AG-ECONO2-6 Tray
***nell
IGBT, MODULE, N-CH, 1.2KV; Transistor Polarity: N Channel; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 280W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case
***ineon
EconoPACK 2 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC (alternative mechnically compatible to an IGBT3 module) | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Al(2)O(3) Substrate with Low Thermal Resistance; High Power and Thermal Cycling Capability; Integrated NTC temperature sensor; Copper Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
*** Stop Electro
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SKM 145 GAL 176 D
DISTI # 16M0231		SEMIKRONIGBT Power Module0
  • 100:$53.5500
  • 50:$56.9800
  • 25:$57.8400
  • 10:$58.6900
  • 5:$60.4100
  • 1:$62.1200
SKM145GAL176D
DISTI # 71043249		SEMIKRONSEMITRANS,1700V,100A
RoHS: Compliant		0
  • 1:$107.9400
  • 8:$102.3500
  • 64:$95.7500
  • 96:$89.9500
  • 144:$84.8200
Bild Teil # Beschreibung
SKM145GAL126D

Mfr.#: SKM145GAL126D

OMO.#: OMO-SKM145GAL126D-1190

 Neu und Original
SKM145GAR125D

Mfr.#: SKM145GAR125D

OMO.#: OMO-SKM145GAR125D-1190

 Neu und Original
SKM145GAY123D

Mfr.#: SKM145GAY123D

OMO.#: OMO-SKM145GAY123D-1190

 Neu und Original
SKM145GB063D

Mfr.#: SKM145GB063D

OMO.#: OMO-SKM145GB063D-1190

 Neu und Original
SKM145GB123D

Mfr.#: SKM145GB123D

OMO.#: OMO-SKM145GB123D-1190

 Neu und Original
SKM145GB124D

Mfr.#: SKM145GB124D

OMO.#: OMO-SKM145GB124D-1190

 Neu und Original
SKM145GB124DN

Mfr.#: SKM145GB124DN

OMO.#: OMO-SKM145GB124DN-1190

 Neu und Original
SKM145GB126D

Mfr.#: SKM145GB126D

OMO.#: OMO-SKM145GB126D-1190

 Neu und Original
SKM145GB128DE

Mfr.#: SKM145GB128DE

OMO.#: OMO-SKM145GB128DE-1190

 Neu und Original
SKM145GB176D

Mfr.#: SKM145GB176D

OMO.#: OMO-SKM145GB176D-1190

 Trans IGBT Module N-CH 1.7KV 160A 7-Pin
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von SKM145GAL176D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,00 $
0,00 $
10
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100
0,00 $
0,00 $
500
0,00 $
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1000
0,00 $
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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