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IPL65R165CFDAUMA1

IPL65R165CFDAUMA1
Mfr. #:
IPL65R165CFDAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_LEGACY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPL65R165CFDAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPL65R165CFDAUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
21.3 A
Rds On - Drain-Source-Widerstand:
149 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
86 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
195 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
8 mm
Serie:
CoolMOS CFDA
Transistortyp:
1 N-Channel
Breite:
8 mm
Marke:
Infineon-Technologien
Abfallzeit:
5.6 ns
Produktart:
MOSFET
Anstiegszeit:
7.6 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
52.8 ns
Typische Einschaltverzögerungszeit:
12.4 ns
Teil # Aliase:
IPL65R165CFD SP000949254
Tags
IPL65R16, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 165 mOhm 86 nC CoolMOS™ Power Mosfet - ThinPAK 8x8
***ical
Trans MOSFET N-CH 650V 21.3A Automotive 4-Pin VSON EP T/R
***el Electronic
0603 2.7 nF 50 V ±5% Tolerance C0G SMT Multilayer Ceramic Capacitor
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-VSON-4, RoHS
***p One Stop
650V COOL MOS CFD2 POWER TRANSISTOR
***ronik
N-CH 650V 21,3A 165mOhm ThinPAK
*** Services
CoC and 2-years warranty / RFQ for pricing
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***ical
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB65R150CFDA Series 650 V 22.4 A CoolMOS CFDA Power Transistor - TO-263-3
*** Stop Electro
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
***ure Electronics
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ow.cn
SIHH24N65E-T1-GE3 Vishay MOSFETs Transistor N-CH 650V 23A 4-Pin PowerPAK EP T/R - Arrow.com
***ical
Trans MOSFET N-CH 650V 23A 4-Pin PowerPAK EP T/R
***el Electronic
MOSFET N-CHAN 650V 23A POWERPAK
***or
MOSFET N-CH 650V 23A PPAK 8 X 8
***icroelectronics
N-channel 650 V, 0.125 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package
***sible Micro
(CP22-1038) Transistor MOSFET N-Channel 650V 22A D2PAK (STB30N65M5)
***ure Electronics
STB30N65M5: 650 V 0.139 Ohm Surface Mount N-Channel Power MOSFET - D2PAK
***ical
Trans MOSFET N-CH Si 650V 22A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package
***r Electronics
Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPL65R165CFDAUMA1
DISTI # IPL65R165CFDAUMA1-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$2.0489
IPL65R165CFDAUMA1
DISTI # IPL65R165CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 21.3A 5-Pin VSON T/R (Alt: IPL65R165CFD)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 10
    IPL65R165CFDAUMA1
    DISTI # IPL65R165CFDAUMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 21.3A 5-Pin VSON T/R - Tape and Reel (Alt: IPL65R165CFDAUMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.9900
    • 6000:$1.8900
    • 12000:$1.7900
    • 18000:$1.7900
    • 30000:$1.6900
    IPL65R165CFD
    DISTI # 726-IPL65R165CFD    		Infineon Technologies AGMOSFET HIGH POWER_LEGACY
    RoHS: Compliant    		0
    • 1:$3.7100
    • 10:$3.1600
    • 100:$2.7400
    • 250:$2.6000
    • 500:$2.3300
    • 1000:$1.9700
    • 3000:$1.8700
    IPL65R165CFDAUMA1
    DISTI # 726-PL65R165CFDAUMA1    		Infineon Technologies AGMOSFET HIGH POWER_LEGACY
    RoHS: Compliant    		0
    • 1:$3.7100
    • 10:$3.1600
    • 100:$2.7400
    • 250:$2.6000
    • 500:$2.3300
    • 1000:$1.9700
    • 3000:$1.8700
    Bild Teil # Beschreibung
    IPL65R165CFD

    Mfr.#: IPL65R165CFD

    OMO.#: OMO-IPL65R165CFD

    		 MOSFET HIGH POWER_LEGACY
    IPL65R165CFDAUMA1

    Mfr.#: IPL65R165CFDAUMA1

    OMO.#: OMO-IPL65R165CFDAUMA1

    		 MOSFET HIGH POWER_LEGACY
    IPL65R165CFDAUMA2

    Mfr.#: IPL65R165CFDAUMA2

    OMO.#: OMO-IPL65R165CFDAUMA2

    		 MOSFET
    IPL65R165CFDAUMA2

    Mfr.#: IPL65R165CFDAUMA2

    OMO.#: OMO-IPL65R165CFDAUMA2-INFINEON-TECHNOLOGIES

    		 HIGH POWER_LEGACY
    IPL65R165CFD

    Mfr.#: IPL65R165CFD

    OMO.#: OMO-IPL65R165CFD-1190

    		 MOSFET HIGH POWER_LEGACY
    IPL65R165CFD(SP000949254

    Mfr.#: IPL65R165CFD(SP000949254

    OMO.#: OMO-IPL65R165CFD-SP000949254-1190

    		 Neu und Original
    IPL65R165CFDAUMA1

    Mfr.#: IPL65R165CFDAUMA1

    OMO.#: OMO-IPL65R165CFDAUMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 4VSON
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IPL65R165CFDAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,70 $
    3,70 $
    10
    3,15 $
    31,50 $
    100
    2,73 $
    273,00 $
    250
    2,59 $
    647,50 $
    500
    2,32 $
    1 160,00 $
    1000
    1,96 $
    1 960,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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