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IRF100B201

IRF100B201
Mfr. #:
IRF100B201
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF100B201 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF100B201 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
192 A
Rds On - Drain-Source-Widerstand:
4.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
170 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
441 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Breite:
4.4 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
278 S
Abfallzeit:
100 ns
Produktart:
MOSFET
Anstiegszeit:
97 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
110 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
SP001561498
Gewichtseinheit:
0.211644 oz
Tags
IRF100B, IRF100, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
***et
Trans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
IRF100x201 HEXFET™ Power MOSFETs
Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRF100B201
DISTI # V99:2348_14701511		Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		3000
  • 1:$2.0406
IRF100B201
DISTI # IRF100B201-ND		Infineon Technologies AGMOSFET N-CH 100V 192A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		4000In Stock
  • 1000:$1.3781
  • 500:$1.6632
  • 100:$2.1384
  • 10:$2.6610
  • 1:$2.9500
IRF100B201
DISTI # 30660878		Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		3000
  • 7:$2.0406
IRF100B201
DISTI # 30155962		Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1830
  • 650:$0.9501
  • 250:$0.9792
  • 50:$1.0752
IRF100B201
DISTI # IRF100B201		Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB - Rail/Tube (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$1.0079
  • 5000:$0.9719
  • 8000:$0.9369
  • 15000:$0.9049
  • 30000:$0.8889
IRF100B201
DISTI # IRF100B201		Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 1000:$1.1340
  • 2000:$1.0874
  • 3000:$1.0727
  • 5000:$1.0309
  • 10000:$1.0177
  • 25000:$0.9922
  • 50000:$0.9680
IRF100B201
DISTI # SP001561498		Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: SP001561498)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.2999
  • 10:€1.1809
  • 25:€1.0829
  • 50:€1.0399
  • 100:€0.9999
  • 500:€0.9619
  • 1000:€0.9279
IRF100B201
DISTI # 12AC9745		Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:192A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3134
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201
DISTI # 942-IRF100B201		Infineon Technologies AGMOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
RoHS: Compliant		1779
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		450
  • 1000:$1.1300
  • 500:$1.1900
  • 100:$1.2400
  • 25:$1.2900
  • 1:$1.3900
IRF100B201
DISTI # 2709888		Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant		3134
  • 1:$3.0100
  • 10:$2.8100
  • 100:$2.4900
  • 500:$2.3500
  • 1000:$2.2300
IRF100B201
DISTI # 2709888		Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant		3412
  • 1:£2.6500
  • 10:£2.0900
  • 100:£1.6700
IRF100B201
DISTI # C1S322000590089		Infineon Technologies AGMOSFETs
RoHS: Compliant		1830
  • 1000:$1.3000
  • 500:$1.7000
  • 100:$1.8500
  • 25:$2.2500
  • 5:$2.7800
Bild Teil # Beschreibung
DRV8353RHRGZT

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OMO.#: OMO-ESD12VD9-TP

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ESD12VD9-TP

Mfr.#: ESD12VD9-TP

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DRV8353RHRGZT

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 100-V Three-Phase Smart Gate Driver With Buck Regulator and Three Current Shunt Amplifiers
DRV8353RS-EVM

Mfr.#: DRV8353RS-EVM

OMO.#: OMO-DRV8353RS-EVM-TEXAS-INSTRUMENTS

 95V BLDC MOTOR DRIVER EVM
REF3425QDBVRQ1

Mfr.#: REF3425QDBVRQ1

OMO.#: OMO-REF3425QDBVRQ1-TEXAS-INSTRUMENTS

 REF3425 - 6 PPM/C IQ 95UA 2.5V FOR AUTO
TPS54360DDAR

Mfr.#: TPS54360DDAR

OMO.#: OMO-TPS54360DDAR-TEXAS-INSTRUMENTS

 Voltage Regulators - Switching Regulators 60 Vin,3.5 A,SD DC-DC Converte
UCC28064ADR

Mfr.#: UCC28064ADR

OMO.#: OMO-UCC28064ADR-TEXAS-INSTRUMENTS

 CONTROLLER WITH IMPROVED LIGHT L
UCC21520AQDWRQ1

Mfr.#: UCC21520AQDWRQ1

OMO.#: OMO-UCC21520AQDWRQ1-TEXAS-INSTRUMENTS

 Isolated Dual-Channel Gate Driver for Automotive
Verfügbarkeit
Aktie:
14
Auf Bestellung:
1997
Menge eingeben:
Der aktuelle Preis von IRF100B201 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,54 $
2,54 $
10
2,16 $
21,60 $
100
1,72 $
172,00 $
500
1,51 $
755,00 $
1000
1,25 $
1 250,00 $
2000
1,16 $
2 320,00 $
5000
1,12 $
5 600,00 $
10000
1,08 $
10 800,00 $
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