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SI4554DY-T1-GE3

SI4554DY-T1-GE3
Mfr. #:
SI4554DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4554DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4554DY-T1-GE3 DatasheetSI4554DY-T1-GE3 Datasheet (P4-P6)SI4554DY-T1-GE3 Datasheet (P7-P9)SI4554DY-T1-GE3 Datasheet (P10-P12)SI4554DY-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SI4554DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
24 mOhms, 27 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V, 1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
13.3 nC, 41.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.1 W, 3.2 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
25 S, 27 S
Abfallzeit:
7 ns, 13 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns, 10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns, 50 ns
Typische Einschaltverzögerungszeit:
5 ns, 10 ns
Gewichtseinheit:
0.017870 oz
Tags
SI4554, SI455, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R / MOSFET N/P-CH 40V 8A 8SO
***S
new, original packaged
***
40V N&P-CHANNEL
***nell
MOSFET, N/P-CH, 40V, 8-SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SI4554DY-T1-GE3
DISTI # V36:1790_09216530		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.2894
SI4554DY-T1-GE3
DISTI # V72:2272_09216530		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R
RoHS: Compliant		1500
  • 1000:$0.3134
  • 500:$0.3938
  • 250:$0.4338
  • 100:$0.4821
  • 25:$0.5687
  • 10:$0.6950
  • 1:$0.8684
SI4554DY-T1-GE3
DISTI # SI4554DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 40V 8A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1874In Stock
  • 1000:$0.3461
  • 500:$0.4326
  • 100:$0.5472
  • 10:$0.7140
  • 1:$0.8100
SI4554DY-T1-GE3
DISTI # SI4554DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 40V 8A 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1874In Stock
  • 1000:$0.3461
  • 500:$0.4326
  • 100:$0.5472
  • 10:$0.7140
  • 1:$0.8100
SI4554DY-T1-GE3
DISTI # SI4554DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 40V 8A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 25000:$0.2660
  • 12500:$0.2730
  • 5000:$0.2835
  • 2500:$0.3045
SI4554DY-T1-GE3
DISTI # 33959995		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R
RoHS: Compliant		12500
  • 2500:$0.2700
SI4554DY-T1-GE3
DISTI # 32318173		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.2894
SI4554DY-T1-GE3
DISTI # 31920049		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R
RoHS: Compliant		1500
  • 26:$0.8684
SI4554DY-T1-GE3
DISTI # SI4554DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SO T/R (Alt: SI4554DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 10000
  • 125000:$0.1833
  • 62500:$0.1864
  • 25000:$0.1897
  • 12500:$0.1964
  • 7500:$0.2037
  • 5000:$0.2115
  • 2500:$0.2200
SI4554DY-T1-GE3
DISTI # SI4554DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SO T/R - Tape and Reel (Alt: SI4554DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2559
  • 15000:$0.2629
  • 10000:$0.2709
  • 5000:$0.2819
  • 2500:$0.2909
SI4554DY-T1-GE3
DISTI # SI4554DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SO T/R (Alt: SI4554DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2939
  • 15000:€0.3159
  • 10000:€0.3429
  • 5000:€0.3979
  • 2500:€0.5839
SI4554DY-T1-GE3
DISTI # 78-SI4554DY-T1-GE3		Vishay IntertechnologiesMOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
RoHS: Compliant		4251
  • 1:$0.7900
  • 10:$0.6370
  • 100:$0.4840
  • 500:$0.4000
  • 1000:$0.3200
  • 2500:$0.2890
  • 5000:$0.2700
  • 10000:$0.2600
SI4554DY-T1-GE3
DISTI # 7879238P		Vishay IntertechnologiesMOSFET DUAL N/P-CH 40V 6.8A/6.6A SOIC8, RL5980
  • 2500:£0.2580
  • 1000:£0.2840
  • 250:£0.4310
  • 50:£0.4980
SI4554DY-T1-GE3
DISTI # 7879238		Vishay IntertechnologiesMOSFET DUAL N/P-CH 40V 6.8A/6.6A SOIC8, PK1130
  • 2500:£0.2580
  • 1000:£0.2840
  • 250:£0.4310
  • 50:£0.4980
  • 10:£0.5660
Bild Teil # Beschreibung
SQ2362ES-T1_GE3

Mfr.#: SQ2362ES-T1_GE3

OMO.#: OMO-SQ2362ES-T1-GE3

 MOSFET N-Channel 60V AEC-Q101 Qualified
SQ3419AEEV-T1_GE3

Mfr.#: SQ3419AEEV-T1_GE3

OMO.#: OMO-SQ3419AEEV-T1-GE3

 MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified
SSM3K341R,LF

Mfr.#: SSM3K341R,LF

OMO.#: OMO-SSM3K341R-LF

 MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET
R6020KNZ1C9

Mfr.#: R6020KNZ1C9

OMO.#: OMO-R6020KNZ1C9

 MOSFET Nch 600V 20A Si MOSFET
R6020KNZC8

Mfr.#: R6020KNZC8

OMO.#: OMO-R6020KNZC8

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STP12NK30Z

Mfr.#: STP12NK30Z

OMO.#: OMO-STP12NK30Z

 MOSFET N-Ch 300 Volt 9 Amp Zener SuperMESH3
SI4564DY-T1-GE3

Mfr.#: SI4564DY-T1-GE3

OMO.#: OMO-SI4564DY-T1-GE3

 MOSFET 40V Vds 16V Vgs SO-8 N&P PAIR
STF16NF25

Mfr.#: STF16NF25

OMO.#: OMO-STF16NF25

 MOSFET N-Channel 650V Pwr Mosfet
STF16NF25

Mfr.#: STF16NF25

OMO.#: OMO-STF16NF25-STMICROELECTRONICS

 Darlington Transistors MOSFET N-Channel 650V Pwr Mosfet
STP12NK30Z

Mfr.#: STP12NK30Z

OMO.#: OMO-STP12NK30Z-STMICROELECTRONICS

 Darlington Transistors MOSFET N-Ch 300 Volt 9 Amp Zener SuperMESH3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von SI4554DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,79 $
0,79 $
10
0,64 $
6,37 $
100
0,48 $
48,40 $
500
0,40 $
200,00 $
1000
0,32 $
320,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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