We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSO612CVGHUMA1 DISTI # 30701953 | Infineon Technologies AG | Trans MOSFET N/P-CH 60V 3A/2A Automotive 8-Pin DSO T/R RoHS: Compliant | 2500 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1TR-ND | Infineon Technologies AG | MOSFET N/P-CH 60V 2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSO612CVGHUMA1 DISTI # V36:1790_06384653 | Infineon Technologies AG | Trans MOSFET N/P-CH 60V 3A/2A Automotive 8-Pin DSO T/R RoHS: Compliant | 0 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R - Bulk (Alt: BSO612CVGHUMA1) RoHS: Compliant Min Qty: 1087 Container: Bulk | Americas - 0 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R - Tape and Reel (Alt: BSO612CVGHUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| BSO612CVGHUMA1 DISTI # SP000216307 | Infineon Technologies AG | Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R (Alt: SP000216307) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| BSO612CV G DISTI # 726-BSO612CVG | Infineon Technologies AG | MOSFET N and P-Ch 60V 3A, -2A DSO-8 RoHS: Compliant | 1138 |
|
| BSO612CVGHUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2013 |
|
| BSO612CVGHUMA1 DISTI # 8269207P | Infineon Technologies AG | MOSFET N/P-CH 3A/2A 60V SIPMOS DSO8, RL | 1575 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1 | Infineon Technologies AG | Transistor: N/P-MOSFET,unipolar,60/-60V,3/-2A,2W,PG-DSO-8 | 1934 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSO612CV G OMO.#: OMO-BSO612CV-G |
MOSFET N and P-Ch 60V 3A, -2A DSO-8 |
|
|
Mfr.#: BSO612CV OMO.#: OMO-BSO612CV |
MOSFET N and P-Ch 60V 3A DSO-8 |
|
|
Mfr.#: BSO612CVGHUMA1 OMO.#: OMO-BSO612CVGHUMA1 |
MOSFET SMALL SIGNAL+P-CH |
|
Mfr.#: BSO612CV |
MOSFET N/P-CH 60V 3A/2A 8SOIC |
|
Mfr.#: BSO612CV G OMO.#: OMO-BSO612CV-G-1190 |
MOSFET N and P-Ch 60V 3A, -2A DSO-8 |
|
|
Mfr.#: BSO612CVG OMO.#: OMO-BSO612CVG-1190 |
Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSO612CVGHUMA1 |
MOSFET N/P-CH 60V 2A 8-SOIC |