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FF150R12ME3G

FF150R12ME3G
Mfr. #:
FF150R12ME3G
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules N-CH 1.2KV 200A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FF150R12ME3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
Produkt:
IGBT Silizium Module
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Kontinuierlicher Kollektorstrom bei 25 C:
200 A
Gate-Emitter-Leckstrom:
400 nA
Pd - Verlustleistung:
695 W
Paket / Koffer:
EconoDUAL-3
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Verpackung:
Tablett
Höhe:
17 mm
Länge:
152 mm
Breite:
62 mm
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Teil # Aliase:
FF150R12ME3GBOSA1 SP000317332
Gewichtseinheit:
12.169517 oz
Tags
FF150R12ME, FF150R12M, FF150R12, FF150R1, FF150R, FF150, FF15, FF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3
***i-Key
IGBT MOD 1200V 200A 695W
***omponent
Infineon power module
***et
MEDIUM POWER ECONO
***ineon
EconoDUAL 3 1200V dual IGBT module with Trench/Fieldstop IGBT3 and Emitter Controlled High Efficiency diode | Summary of Features: Easy separation of DC and AC; Optimized Thermal Resistance Case to Heat Sink; Highest Power Density for compact Inverter Designs | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
Teil # Mfg. Beschreibung Aktie Preis
FF150R12ME3GBOSA1
DISTI # FF150R12ME3GBOSA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 150A
RoHS: Not compliant
Min Qty: 10
Container: Bulk		Limited Supply - Call
  • 10:$92.3980
FF150R12ME3G
DISTI # FF150R12ME3G		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 - Bulk (Alt: FF150R12ME3G)
RoHS: Compliant
Min Qty: 5
Container: Bulk		Americas - 0
  • 50:$79.7900
  • 25:$81.2900
  • 15:$84.0900
  • 10:$87.2900
  • 5:$90.4900
FF150R12ME3G
DISTI # SP000317332		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 (Alt: SP000317332)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€74.0900
  • 500:€75.8900
  • 100:€78.0900
  • 50:€80.7900
  • 25:€83.5900
  • 10:€91.9900
  • 1:€113.7900
FF150R12ME3GBOSA1
DISTI # FF150R12ME3GBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FF150R12ME3GBOSA1)
Min Qty: 5
Container: Bulk		Americas - 0
  • 50:$74.4900
  • 25:$75.7900
  • 15:$78.4900
  • 10:$81.3900
  • 5:$84.4900
FF150R12ME3GBOSA1
DISTI # FF150R12ME3GBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FF150R12ME3GBOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 100:$75.6900
  • 60:$77.5900
  • 40:$79.4900
  • 20:$81.5900
  • 10:$82.6900
FF150R12ME3G
DISTI # 641-FF150R12ME3G		Infineon Technologies AGIGBT Modules N-CH 1.2KV 200A7
  • 1:$100.5700
  • 5:$98.7300
  • 10:$94.2800
  • 25:$91.1400
2SP0115T2A0-FF150R12ME3G
DISTI # 869-A0-FF150R12ME3G		Power IntegrationsPower Management Modules 2SP0115T PI Gate Driver ONLY
RoHS: Not compliant		0
  • 12:$87.2800
  • 48:$80.7700
2SP0115T2B0-FF150R12ME3G
DISTI # 869-B0-FF150R12ME3G		Power IntegrationsPower Management Modules 2SP0115T PI Gate Driver ONLY
RoHS: Not compliant		0
  • 12:$96.0100
  • 48:$88.8500
DB01-FF150R12ME3G
DISTI # 869-FF150R12M3G		Power IntegrationsPower Management Modules DB01
RoHS: Not compliant		0
    FF150R12ME3GInfineon Technologies AGInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		428
    • 1000:$82.7100
    • 500:$87.0600
    • 100:$90.6400
    • 25:$94.5300
    • 1:$101.8000
    FF150R12ME3GBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		140
    • 1000:$77.2000
    • 500:$81.2600
    • 100:$84.6000
    • 25:$88.2300
    • 1:$95.0100
    2SD316EI-12-DB01-FF150R12ME3G
    DISTI # DB01-FF150R12ME    		Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
    RoHS: Not Compliant    		0
    • 12:$166.0800
    • 40:$153.6800
    Bild Teil # Beschreibung
    EYG-S0612ZLWF

    Mfr.#: EYG-S0612ZLWF

    OMO.#: OMO-EYG-S0612ZLWF

    		 Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.
    EYG-S0612ZLWF

    Mfr.#: EYG-S0612ZLWF

    OMO.#: OMO-EYG-S0612ZLWF-PANASONIC

    		 Heat Insulating Sheet
    ISO5852SDWEVM-017

    Mfr.#: ISO5852SDWEVM-017

    OMO.#: OMO-ISO5852SDWEVM-017-TEXAS-INSTRUMENTS

    		 DEVELOPMENT INTERFACE
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von FF150R12ME3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    100,57 $
    100,57 $
    5
    98,73 $
    493,65 $
    10
    94,28 $
    942,80 $
    25
    91,14 $
    2 278,50 $
    100
    84,87 $
    8 487,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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