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IPW60R190E6FKSA1

IPW60R190E6FKSA1
Mfr. #:
IPW60R190E6FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 600V 20.2A TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW60R190E6FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPW60R190E, IPW60R190, IPW60R19, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS E6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPW60R190E6FKSA1
DISTI # V99:2348_06377241		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		227
  • 2640:$1.7740
  • 720:$2.0950
  • 240:$2.4610
  • 25:$2.5520
  • 10:$2.8360
  • 1:$3.6608
IPW60R190E6FKSA1
DISTI # V36:1790_06377241		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$1.4780
  • 120000:$1.4810
  • 24000:$1.9280
  • 2400:$2.7910
  • 240:$2.9400
IPW60R190E6FKSA1
DISTI # IPW60R190E6FKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 20.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		511In Stock
  • 5040:$1.7047
  • 2640:$1.7713
  • 720:$2.2108
  • 240:$2.5970
  • 25:$2.9964
  • 10:$3.1700
  • 1:$3.5300
IPW60R190E6FKSA1
DISTI # 21100603		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		2086
  • 7:$1.5888
IPW60R190E6FKSA1
DISTI # 30332229		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		227
  • 4:$3.6608
IPW60R190E6FKSA1
DISTI # SP000797384		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 (Alt: SP000797384)
RoHS: Compliant
Min Qty: 1		Europe - 720
  • 1000:€1.3900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.5900
  • 50:€1.5900
  • 10:€1.6900
  • 1:€1.8900
IPW60R190E6FKSA1
DISTI # IPW60R190E6FKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R190E6FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 960:$1.5900
  • 1440:$1.5900
  • 2400:$1.5900
  • 480:$1.6900
  • 240:$1.7900
IPW60R190E6FKSA1
DISTI # 13AC9097		Infineon Technologies AGMOSFET, N-CH, 600V, 20.2A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes240
  • 100:$3.1100
  • 50:$3.2600
  • 25:$3.4000
  • 10:$3.5400
  • 1:$4.1100
IPW60R190E6FKSA1
DISTI # 726-IPW60R190E6FKSA1		Infineon Technologies AGMOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
RoHS: Compliant		54
  • 1:$3.3500
  • 10:$2.8500
  • 100:$2.4700
  • 250:$2.3400
  • 500:$2.1000
IPW60R190E6
DISTI # 726-IPW60R190E6		Infineon Technologies AGMOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
RoHS: Compliant		1
  • 1:$3.3500
  • 10:$2.8500
  • 100:$2.4700
  • 250:$2.3400
  • 500:$2.1000
IPW60R190E6FKSA1
DISTI # 1107443P		Infineon Technologies AGMOSFET N-CHANNEL COOLMOS 600V 20A TO247, TU6570
  • 400:£1.5900
  • 200:£1.6230
  • 80:£1.7530
  • 20:£1.9000
IPW60R190E6FKSA1
DISTI # IPW60R190E6FKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO247-3230
  • 30:$2.1300
  • 10:$2.4400
  • 5:$3.0500
  • 1:$3.5400
IPW60R190E6FKSA1
DISTI # 2726078		Infineon Technologies AGMOSFET, N-CH, 600V, 20.2A, TO-247-3
RoHS: Compliant		240
  • 2640:$2.6800
  • 720:$3.3400
  • 240:$3.9200
  • 25:$4.5200
  • 10:$4.7800
  • 1:$5.3200
IPW60R190E6FKSA1
DISTI # 2726078		Infineon Technologies AGMOSFET, N-CH, 600V, 20.2A, TO-247-3240
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.8000
  • 10:£2.0700
  • 1:£2.7400
IPW60R190E6FKSA1
DISTI # IPW60R190E6		Infineon Technologies AGN-Ch 600V 20,2A 151W 0,19R TO247
RoHS: Compliant		92
  • 1:€5.9500
  • 10:€2.9500
  • 50:€1.4500
  • 100:€1.3800
Bild Teil # Beschreibung
IPW60R190C6

Mfr.#: IPW60R190C6

OMO.#: OMO-IPW60R190C6

 MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6
IPW60R199CP

Mfr.#: IPW60R199CP

OMO.#: OMO-IPW60R199CP

 MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP
IPW60R199CPFKSA1

Mfr.#: IPW60R199CPFKSA1

OMO.#: OMO-IPW60R199CPFKSA1

 MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP
IPW60R190C6FKSA1

Mfr.#: IPW60R190C6FKSA1

OMO.#: OMO-IPW60R190C6FKSA1

 MOSFET HIGH POWER_LEGACY
IPW60R190

Mfr.#: IPW60R190

OMO.#: OMO-IPW60R190-1190

 Neu und Original
IPW60R190E6,6R190E6,IPW6

Mfr.#: IPW60R190E6,6R190E6,IPW6

OMO.#: OMO-IPW60R190E6-6R190E6-IPW6-1190

 Neu und Original
IPW60R190E6,IPW60R165CP,

Mfr.#: IPW60R190E6,IPW60R165CP,

OMO.#: OMO-IPW60R190E6-IPW60R165CP--1190

 Neu und Original
IPW60R199CP(SP000089802)

Mfr.#: IPW60R199CP(SP000089802)

OMO.#: OMO-IPW60R199CP-SP000089802--1190

 Neu und Original
IPW60R199CP/6R199

Mfr.#: IPW60R199CP/6R199

OMO.#: OMO-IPW60R199CP-6R199-1190

 Neu und Original
IPW60R190C6

Mfr.#: IPW60R190C6

OMO.#: OMO-IPW60R190C6-124

 Darlington Transistors MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IPW60R190E6FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,23 $
2,23 $
10
2,12 $
21,21 $
100
2,01 $
200,97 $
500
1,90 $
949,00 $
1000
1,79 $
1 786,40 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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