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2SJ372

2SJ372
Mfr. #:
2SJ372
Hersteller:
SHINDENGE
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SJ372 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SHINDENGE
Produktkategorie
IC-Chips
Tags
2SJ37, 2SJ3, 2SJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
NTD20P06LT4G P-channel MOSFET Transistor; 15.5 A; 60 V; 3-Pin DPAK
*** Source Electronics
Trans MOSFET P-CH 60V 15.5A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 60V 15.5A DPAK
***ure Electronics
P-Channel 60 V 130 mOhm 65 W Tab Mount Power MOSFET - TO-252-3
***emi
Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15.5A; On Resistance Rds(On):0.143Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15.5 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 150 / Gate-Source Voltage V = 20 / Fall Time ns = 135 / Rise Time ns = 180 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 65
***ure Electronics
Single N-Channel 60 V 0.1 Ohms Flange Mount Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
TRANS MOSFET N-CH 60V 17A 3-PIN (3+TAB) TO-220AB
***nell
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipati
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
***ure Electronics
Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK
***nell
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***(Formerly Allied Electronics)
NTD18N06LT4G N-channel MOSFET Transistor; 18 A; 60 V; 3-Pin DPAK
***emi
Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ
***ure Electronics
N-Channel 60 V 54 mOhm 55 W Tab Mount Power MOSFET - TO-252-3
*** Source Electronics
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 18A DPAK
***nell
MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.8V
***(Formerly Allied Electronics)
NTB5605PT4G P-channel MOSFET Transistor; 18.5 A; 60 V; 3-Pin D2PAK
***ure Electronics
P-Channel 60 V 140 mOhm 88 W Surface Mount Power MOSFET - D2PAK-3
***ical
Trans MOSFET P-CH 60V 18.5A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
Single P-Channel Power MOSFET -60V -18.5A 140 mΩ
***ark
P CHANNEL MOSFET, -60V, 18.5A, D2-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
***nell
MOSFET, P-CH, -60V, -18.5A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -18.5A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 88W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***(Formerly Allied Electronics)
IRFZ24PBF N-channel MOSFET Transistor; 17 A; 60 V; 3-Pin TO-220AB
***ment14 APAC
N CHANNEL MOSFET, 55V, 17A TO-220AB; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:17A;
***ical
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB
***ure Electronics
Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet
Teil # Mfg. Beschreibung Aktie Preis
2SJ307
DISTI # 2SJ307		ON Semiconductor- Bulk (Alt: 2SJ307)
Min Qty: 1
Container: Bulk		Americas - 0
    2SJ307SANYO Semiconductor Co LtdPOWER FIELD-EFFECT TRANSISTOR, 6A I(D), 250V, 1OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB2000
      Bild Teil # Beschreibung
      2SJ133-Z-E2-AZ

      Mfr.#: 2SJ133-Z-E2-AZ

      OMO.#: OMO-2SJ133-Z-E2-AZ-1190

      		 Neu und Original
      2SJ200

      Mfr.#: 2SJ200

      OMO.#: OMO-2SJ200-1190

      		 Neu und Original
      2SJ200/2SK1530

      Mfr.#: 2SJ200/2SK1530

      OMO.#: OMO-2SJ200-2SK1530-1190

      		 Neu und Original
      2SJ2284-103592F

      Mfr.#: 2SJ2284-103592F

      OMO.#: OMO-2SJ2284-103592F-1190

      		 Neu und Original
      2SJ270

      Mfr.#: 2SJ270

      OMO.#: OMO-2SJ270-1190

      		 Neu und Original
      2SJ305(TE85L)

      Mfr.#: 2SJ305(TE85L)

      OMO.#: OMO-2SJ305-TE85L--1190

      		 Neu und Original
      2SJ328

      Mfr.#: 2SJ328

      OMO.#: OMO-2SJ328-1190

      		 Small Signal Bipolar Transisto
      2SJ383-TL

      Mfr.#: 2SJ383-TL

      OMO.#: OMO-2SJ383-TL-1190

      		 Neu und Original
      2SJ486ZU-T

      Mfr.#: 2SJ486ZU-T

      OMO.#: OMO-2SJ486ZU-T-1190

      		 Neu und Original
      2SJ6810

      Mfr.#: 2SJ6810

      OMO.#: OMO-2SJ6810-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von 2SJ372 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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