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BSB008NE2LX

BSB008NE2LX
Mfr. #:
BSB008NE2LX
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSB008NE2LX Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
WDSON-2-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
600 uOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
343 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
89 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
120 S
Abfallzeit:
32.4 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
47.2 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
12.6 ns
Teil # Aliase:
BSB008NE2LXXUMA1 BSB8NE2LXXT SP000880866
Tags
BSB00, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 46A 7-Pin WDSON T/R
***ineon SCT
With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs, MG-WDSON-2, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and hot-swap application. CanPAK package allows double sided cooling in thermally challenging applications. With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design in; Double side cooling | Benefits: Increased battery lifetime/system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg
***fin
Transistor NPN Field Effect IRFZ44/IRFZ44N INTERNATIONAL RECTIFIER Ampere=46 V=250 TO220
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 41A/55V TO220 IRFZ 44 NPBF
***p One Stop
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W
*** Stop Electro
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:49A; On Resistance, Rds(on):17.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Current Temperature:25°C; Device Marking:IRFZ44NPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***id Electronics
Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF
***ter Electronics
MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***roFlash
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
***eco
Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
*** Stop Electro
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. of Pins:3Pins RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:170mJ; Capacitance Ciss Typ:2900pF; Current Id Max:59A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:18mohm; Package / Case:TO-220AB; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Power Dissipation Ptot Max:160W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:50ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
*** Source Electronics
MOSFET P-CH 40V 50A DPAK / Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK
***roFlash
Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P CH, -40V, -50A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 73.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Operating Temperature Min: -55°C
***(Formerly Allied Electronics)
IRFZ44PBF N-channel MOSFET Transistor; 50 A; 60 V; 3-Pin TO-220AB
***ure Electronics
Single N-Channel 60 V 0.028 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 60V 50A 3-Pin (3+Tab) TO-220AB
***roFlash
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CHANNEL MOSFET, 60V, 50A; Transistor P; N CHANNEL MOSFET, 60V, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***eco
Transistor RFP50N06 N-Channel MOSFET 60 Volt 50 Amp TO-220AB
***ure Electronics
N-Channel 60 V 0.022 Ohm Flange Mount Power Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***emi
N-Channel Power MOSFET 60V, 50A, 22mΩ
***r Electronics
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:131W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Current Temperature:25°C; Device Marking:RFP50N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:22mohm; Package / Case:TO-220AB; Power Dissipation Pd:131W; Power Dissipation Pd:131W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018.
*** Source Electronics
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
N CH MOSFET, 25V, 38A, DIRECTFET MX; Tra; N CH MOSFET, 25V, 38A, DIRECTFET MX; Transistor Polarity:(Not Available); Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V
***ure Electronics
Dual N-Channel 25 V 3.2 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PG-TISON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R / MOSFET 2N-CH 25V 64A/188A PQFN
***et
Transistor MOSFET Array Dual N-CH 25V 188A 8-Pin PQFN T/R
***(Formerly Allied Electronics)
MOSFET; 25V; 45 A Power Block in PQFN 5x6 package
***ineon
Benefits: RoHS Compliant; Qualified Industrial; Qualified MSL1; Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2; FastIRFET | Target Applications: Point of Load
***(Formerly Allied Electronics)
A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 36
***Yang
Trans MOSFET N-CH 25V 36A 7-Pin Direct-FET MX T/R - Tape and Reel
***ronik
N-CH 25V 36A 1,1mOhm DirectFET RoHSconf
***ineon
Target Applications: MultiPhase SyncFET
*** Electronic Components
MOSFET 25V SINGLE N-CH 20V VGS MAX
***el Electronic
MOSFET N-CH 25V 36A DIRECTFET-MX
***ark
N Channel, MOSFET, 25V, 36A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A DPAK
***icroelectronics
N-channel 30 V, 0.00081 Ohm typ., 220 A STripFET H7 Power MOSFET in a PowerFLAT 5x6 package
***ure Electronics
N-Channel 30 V 0.0011 O 46 nC 113 W STripFET VII Power MosFet - PowerFLAT(5 x 6)
***ical
Trans MOSFET N-CH 30V 220A 8-Pin Power Flat EP T/R
***ronik
N-CH 30V 220A 1,1mOhm PwFLAT5x6
***el Electronic
IC REG LIN POS ADJ 150MA SOT23-5
***emi
PowerTrench® MOSFET, N-Channel, 30V, 160A, 3.9mΩ
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Teil # Mfg. Beschreibung Aktie Preis
BSB008NE2LXXUMA1
DISTI # BSB008NE2LXXUMA1-ND		Infineon Technologies AGMOSFET N-CH 25V 46A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.1082
BSB008NE2LXXT
DISTI # BSB008NE2LXXUMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 46A 7-Pin WDSON - Tape and Reel (Alt: BSB008NE2LXXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8929
  • 10000:$0.8609
  • 20000:$0.8289
  • 30000:$0.8019
  • 50000:$0.7869
BSB008NE2LXXUMA1
DISTI # SP000880866		Infineon Technologies AGTrans MOSFET N-CH 25V 46A 7-Pin WDSON-2 T/R (Alt: SP000880866)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€1.1329
  • 10000:€0.8799
  • 20000:€0.8169
  • 30000:€0.7909
  • 50000:€0.7609
BSB008NE2LX
DISTI # 726-BSB008NE2LXXT		Infineon Technologies AGMOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
RoHS: Compliant		2437
  • 1:$2.2800
  • 10:$1.9300
  • 100:$1.5500
  • 500:$1.3500
  • 1000:$1.1200
  • 2500:$1.0400
  • 5000:$1.0000
BSB008NE2LXXUMA1
DISTI # 726-BSB008NE2LX		Infineon Technologies AGMOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
RoHS: Compliant		0
  • 1:$2.2800
  • 10:$1.9300
  • 100:$1.5500
  • 500:$1.3500
  • 1000:$1.1200
  • 2500:$1.0400
  • 5000:$1.0000
BSB008NE2LXXT
DISTI # 726-BSB008NE2LXXUMA1		Infineon Technologies AGMOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
RoHS: Compliant		0
  • 5000:$1.0000
BSB008NE2LXInfineon Technologies AG 100
    BSB008NE2LXInfineon Technologies AG25V,0.8m,180A,N-Channel Power MOSFET100
    • 1:$1.6400
    • 100:$1.3700
    • 500:$1.2100
    • 1000:$1.1700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von BSB008NE2LX dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,28 $
    2,28 $
    10
    1,93 $
    19,30 $
    100
    1,55 $
    155,00 $
    500
    1,35 $
    675,00 $
    1000
    1,12 $
    1 120,00 $
    2500
    1,04 $
    2 600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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