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SISA96DN-T1-GE3

SISA96DN-T1-GE3
Mfr. #:
SISA96DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA96DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISA96DN-T1-GE3 DatasheetSISA96DN-T1-GE3 Datasheet (P4-P6)SISA96DN-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
7.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
31 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
26.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
47 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ureElectronics
SingleNChannel30V88mOhmSMTTrenchFETPowerMosfetPowerPAK12128
***roFlash
TransMOSFETNCH30V148A8PinPowerPAK1212EPTR
***ark
MosfetNCh30V16APowerpak1212;TransistorPolaritynChannel;ContinuousDrainCurrentId16A;DrainSourceVoltageVds30V;OnResistanceRdsOn00073Ohm;RdsOnTestVoltageVgs10V;ThresholdVoltageVgs22V;PowerRohsCompliantYes
Teil # Mfg. Beschreibung Aktie Preis
SISA96DN-T1-GE3
DISTI # V72:2272_17597341		Vishay IntertechnologiesSISA96DN-T1-GE35919
  • 75000:$0.1109
  • 3001:$0.1129
  • 30000:$0.1143
  • 15000:$0.1176
  • 6000:$0.1210
  • 1:$0.1231
  • 3000:$0.1416
  • 1000:$0.1558
  • 500:$0.2014
  • 250:$0.2331
  • 100:$0.2451
  • 50:$0.2911
  • 25:$0.3235
  • 10:$0.3297
SISA96DN-T1-GE3
DISTI # SISA96DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 16A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4373In Stock
  • 1000:$0.1849
  • 500:$0.2393
  • 100:$0.3263
  • 10:$0.4350
  • 1:$0.5200
SISA96DN-T1-GE3
DISTI # SISA96DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 16A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4373In Stock
  • 1000:$0.1849
  • 500:$0.2393
  • 100:$0.3263
  • 10:$0.4350
  • 1:$0.5200
SISA96DN-T1-GE3
DISTI # SISA96DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 16A POWERPAK1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1637
SISA96DN-T1-GE3
DISTI # 25817682		Vishay IntertechnologiesSISA96DN-T1-GE35919
  • 3000:$0.1416
  • 1000:$0.1555
  • 500:$0.2014
  • 250:$0.2331
  • 100:$0.2451
  • 52:$0.2911
SISA96DN-T1-GE3
DISTI # SISA96DN-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 16A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SISA96DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.1389
  • 12000:$0.1349
  • 18000:$0.1299
  • 30000:$0.1259
  • 60000:$0.1229
SISA96DN-T1-GE3
DISTI # SISA96DN-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 16A 8-Pin PowerPAK T/R (Alt: SISA96DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
  • 6000:$0.1303
  • 12000:$0.1002
  • 18000:$0.0798
  • 30000:$0.0674
  • 60000:$0.0620
  • 150000:$0.0601
  • 300000:$0.0583
SISA96DN-T1-GE3
DISTI # 10AC9117		Vishay IntertechnologiesMOSFET, N-CH, 30V, 16A, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes12000
  • 1000:$0.1970
  • 500:$0.2430
  • 250:$0.2650
  • 100:$0.2880
  • 50:$0.3170
  • 25:$0.3450
  • 10:$0.3750
  • 1:$0.4850
SISA96DN-T1-GE3
DISTI # 78-SISA96DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		19354
  • 1:$0.4600
  • 10:$0.3470
  • 100:$0.2580
  • 500:$0.2120
  • 1000:$0.1640
  • 3000:$0.1490
  • 6000:$0.1400
  • 9000:$0.1300
  • 24000:$0.1250
SISA96DN-T1-GE3
DISTI # 2708307		Vishay IntertechnologiesMOSFET, N-CH, 30V, 16A, POWERPAK 1212
RoHS: Compliant		12000
  • 1000:$0.2950
  • 500:$0.3820
  • 100:$0.5210
  • 10:$0.6930
  • 1:$0.8300
SISA96DN-T1-GE3
DISTI # 2708307		Vishay IntertechnologiesMOSFET, N-CH, 30V, 16A, POWERPAK 1212
RoHS: Compliant		4620
  • 500:£0.1890
  • 250:£0.2240
  • 100:£0.2580
  • 25:£0.3660
  • 5:£0.3890
Bild Teil # Beschreibung
MMBT2222A-7-F

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OMO.#: OMO-TPS62136RGXT

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Mfr.#: ERJ-6LWFR006V

OMO.#: OMO-ERJ-6LWFR006V

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C0402C103J5RACAUTO

Mfr.#: C0402C103J5RACAUTO

OMO.#: OMO-C0402C103J5RACAUTO

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105307-1204

Mfr.#: 105307-1204

OMO.#: OMO-105307-1204-1190

 CONNECTOR, RCPT, 4POS, 1ROW, 2.5MM, Pitch Spacing:2.5mm, No. of Contacts:4Contacts, Gender:Receptacle, Product Range:Nano-Fit 105307 Series, Contact Termination Type:Crimp, No. of Rows:1Rows, C
TPS62136RGXT

Mfr.#: TPS62136RGXT

OMO.#: OMO-TPS62136RGXT-TEXAS-INSTRUMENTS

 IC REG BUCK ADJUSTABLE 4A 11VQFN
C0402C103J5RACAUTO

Mfr.#: C0402C103J5RACAUTO

OMO.#: OMO-C0402C103J5RACAUTO-KEMET

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AC0603KRX7R9BB104

Mfr.#: AC0603KRX7R9BB104

OMO.#: OMO-AC0603KRX7R9BB104-YAGEO

 Cap Ceramic 0.1uF 50V X7R 10% Pad SMD 0603 125°C Automotive T/R
MMBT2222A-7-F

Mfr.#: MMBT2222A-7-F

OMO.#: OMO-MMBT2222A-7-F-DIODES

 Bipolar Transistors - BJT 40V 300mW
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von SISA96DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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