S29GL01GS11FHSS53

S29GL01GS11FHSS53
Mfr. #:
S29GL01GS11FHSS53
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash Nor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS11FHSS53 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S29GL01GS11FHSS53 Mehr Informationen S29GL01GS11FHSS53 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Serie:
S29GL01G/512/256/128S
Verpackung:
Spule
Speichertyp:
NOCH
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
1600
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
MirrorBit Eclipse
Tags
S29GL01GS11FHS, S29GL01GS11FH, S29GL01GS11F, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEAT
***i-Key
IC FLASH 1GBIT PARALLEL 64FBGA
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
S29GL01GS11FHSS53
DISTI # S29GL01GS11FHSS53-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 1600
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1600:$8.0845
S29GL01GS11FHSS53
DISTI # 727-29GL01GS11FHSS53
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1600:$7.8500
Bild Teil # Beschreibung
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Mfr.#: S29GL01GT11FAIV10

OMO.#: OMO-S29GL01GT11FAIV10-CYPRESS-SEMICONDUCTOR

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Mfr.#: S29GL01GT12TFVV13

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S29GL01GT11TFIV10

Mfr.#: S29GL01GT11TFIV10

OMO.#: OMO-S29GL01GT11TFIV10-CYPRESS-SEMICONDUCTOR

Flash Memory 1 GBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO
S29GL01GT12TFN020

Mfr.#: S29GL01GT12TFN020

OMO.#: OMO-S29GL01GT12TFN020-CYPRESS-SEMICONDUCTOR

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S29GL01GS10DHSS33

Mfr.#: S29GL01GS10DHSS33

OMO.#: OMO-S29GL01GS10DHSS33-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GT11FHIV10

Mfr.#: S29GL01GT11FHIV10

OMO.#: OMO-S29GL01GT11FHIV10-CYPRESS-SEMICONDUCTOR

IC FLASH 1G PARALLEL 64FBGA GL-T
S29GL01GP11TFIR1

Mfr.#: S29GL01GP11TFIR1

OMO.#: OMO-S29GL01GP11TFIR1-1190

Neu und Original
S29GL01GS11FHIV1

Mfr.#: S29GL01GS11FHIV1

OMO.#: OMO-S29GL01GS11FHIV1-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von S29GL01GS11FHSS53 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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