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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQJ465EP-T1-GE3 DISTI # 25124876 | Vishay Intertechnologies | P-CHANNEL 60-V (D-S) 175C MOSF RoHS: Compliant | 3000 |
|
| SQJ465EP-T1-GE3 DISTI # V36:1790_09219215 | Vishay Intertechnologies | P-CHANNEL 60-V (D-S) 175C MOSF RoHS: Compliant | 0 |
|
| SQJ465EP-T1_GE3 DISTI # SQJ465EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 60V 8A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ465EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SQJ465EP-T1_GE3 DISTI # SQJ465EP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 60V 8A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ465EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SQJ465EP-T1_GE3 DISTI # SQJ465EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 60V 8A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ465EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SQJ465EP-T1_GE3 DISTI # 781-SQJ465EP-T1_GE3 | Vishay Intertechnologies | MOSFET -60V -8A 45W AEC-Q101 Qualified RoHS: Compliant | 4560 |
|
| SQJ465EP-T1-GE3 DISTI # 781-SQJ465EP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SQJ465EP-T1_GE3 RoHS: Compliant | 0 | |
| SQJ465EP-T1-GE3 | Vishay Intertechnologies | 1218 | ||
| SQJ465EPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SQJ465EP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SQJ465EP-T1_GE3 RoHS: Compliant | Americas - |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SQJ465EP-T1_GE3 OMO.#: OMO-SQJ465EP-T1-GE3 |
MOSFET -60V -8A 45W AEC-Q101 Qualified |
|
Mfr.#: SQJ465EP-T1_GE3 OMO.#: OMO-SQJ465EP-T1-GE3-VISHAY |
MOSFET P-CH 60V 8A POWERPAKSO-8 |
|
Mfr.#: SQJ465EP-T1-GE3 OMO.#: OMO-SQJ465EP-T1-GE3-1190 |
P-CHANNEL 60-V (D-S) 175C MOSF |
|
|
Mfr.#: SQJ465EPT1GE3 OMO.#: OMO-SQJ465EPT1GE3-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |