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IPP65R110CFD

IPP65R110CFD
Mfr. #:
IPP65R110CFD
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP65R110CFD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP65R110CFD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
31.2 A
Rds On - Drain-Source-Widerstand:
110 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
118 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
277.8 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
6 nS
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 nS
Teil # Aliase:
IPP65R110CFDXKSA1 IPP65R11CFDXK SP000895226
Gewichtseinheit:
0.211644 oz
Tags
IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPP65R110CFDXKSA1
DISTI # IPP65R110CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 700V 31.2A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$3.3064
  • 500:$3.9204
  • 100:$4.8415
  • 10:$5.9040
  • 1:$6.6100
IPP65R110CFDXKSA1
DISTI # SP000895226		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin TO-220 Tube (Alt: SP000895226)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 100
  • 1:€3.1900
  • 10:€2.8900
  • 25:€2.7900
  • 50:€2.6900
  • 100:€2.5900
  • 500:€2.4900
  • 1000:€2.2900
IPP65R110CFDXKSA1
DISTI # IPP65R110CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$2.9900
  • 1000:$2.8900
  • 2000:$2.7900
  • 3000:$2.6900
  • 5000:$2.6900
IPP65R110CFDXKSA1
DISTI # 13AC9085		Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes460
  • 500:$4.3300
  • 250:$4.6700
  • 100:$5.2500
  • 50:$5.6000
  • 25:$5.9600
  • 10:$6.3100
  • 1:$7.0200
IPP65R110CFD
DISTI # 726-IPP65R110CFD		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
RoHS: Compliant		0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IPP65R110CFDXKSA1
DISTI # 2726071		Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3
RoHS: Compliant		457
  • 1000:$4.9100
  • 500:$5.8300
  • 100:$7.1900
  • 10:$8.7700
  • 1:$9.8200
IPP65R110CFDXKSA1
DISTI # 2726071		Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3
RoHS: Compliant		457
  • 100:£4.3300
  • 10:£5.2800
  • 1:£6.5100
Bild Teil # Beschreibung
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Mfr.#: IPP65R065C7XKSA1

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OMO.#: OMO-IPP65R660CFDAAKSA1

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OMO.#: OMO-IPP65R600C6XKSA1

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IPP65R420CFDXKSA2

Mfr.#: IPP65R420CFDXKSA2

OMO.#: OMO-IPP65R420CFDXKSA2-INFINEON-TECHNOLOGIES

 LOW POWER_LEGACY
IPP65R110CFDA

Mfr.#: IPP65R110CFDA

OMO.#: OMO-IPP65R110CFDA-1190

 Neu und Original
IPP65R190E6

Mfr.#: IPP65R190E6

OMO.#: OMO-IPP65R190E6-1190

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R600E6XKSA1

Mfr.#: IPP65R600E6XKSA1

OMO.#: OMO-IPP65R600E6XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 7.3A TO220
IPP65R074C6XKSA1

Mfr.#: IPP65R074C6XKSA1

OMO.#: OMO-IPP65R074C6XKSA1-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 700V 57.7A TO220-3
IPP65R190C6XKSA1

Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 20.2A TO220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPP65R110CFD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,68 $
5,68 $
10
4,83 $
48,30 $
100
4,18 $
418,00 $
250
3,97 $
992,50 $
500
3,56 $
1 780,00 $
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