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FGA15N120ANTDTU_F109

FGA15N120ANTDTU_F109
Mfr. #:
FGA15N120ANTDTU_F109
Hersteller:
Fairchild Semiconductor
Beschreibung:
IGBT Transistors 1200V NPT Trench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA15N120ANTDTU_F109 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.225789 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-3P-3, SC-65-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3PN
Aufbau
Single
Leistung max
186W
Reverse-Recovery-Time-trr
330ns
Strom-Kollektor-Ic-Max
30A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
NPT und Trench
Strom-Kollektor-gepulster-Icm
45A
Vce-on-Max-Vge-Ic
2.4V @ 15V, 15A
Schaltenergie
3mJ (on), 600μJ (off)
Gate-Gebühr
120nC
Td-ein-aus-25°C
15ns/160ns
Testbedingung
600V, 15A, 10 Ohm, 15V
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
24 A
Tags
FGA15N120ANTDTU-F, FGA15N120ANTDT, FGA15N120ANT, FGA15N120AN, FGA15N120A, FGA15N120, FGA15N1, FGA15N, FGA15, FGA1, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3
***ow.cn
Trans IGBT Chip N-CH 1200V 30A 186000mW 3-Pin(3+Tab) TO-3P Tube
***ment14 APAC
IGBT, SINGLE, 1.2KV, 30A, TO-3P-3
***th Star Micro
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V UltraFast Discrete IGBT
***el Electronic
RF Connectors / Coaxial Connectors 250Vrms 0.07ohms 11GHZ
***or
INSULATED GATE BIPOLAR GATE TRAS
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
***nell
IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati
***rchild Semiconductor
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST
***rchild Semiconductor
HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.
***ical
Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
***emi
IGBT, 1250V, 15A, Shorted-anode
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
***ark
RAIL / 1250V 15A FS SA Trench IGBT
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
***p One Stop Global
Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
***el Electronic
Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ure Electronics
GenX3™ XPT™ IGBT 900 V 8 A Through Hole High-Speed IGBT - TO-220-3
***i-Key
IGBT 900V 20A 125W TO220
***el Electronic
IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
***trelec
IGBT, 900V, 20A, TO-220
Teil # Mfg. Beschreibung Aktie Preis
FGA15N120ANTDTU-F109
DISTI # 26733881		ON Semiconductor1200V NPT TRENCH IGBT3600
  • 5400:$1.2829
  • 3600:$1.3379
  • 1800:$1.3978
  • 450:$1.5608
FGA15N120ANTDTU-F109
DISTI # 33626149		ON Semiconductor1200V NPT TRENCH IGBT1737
  • 9:$1.2370
FGA15N120ANTDTU-F109
DISTI # FGA15N120ANTDTU-F109-ND		ON SemiconductorIGBT 1200V 30A 186W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		508In Stock
  • 2700:$1.4853
  • 900:$1.7611
  • 450:$1.9627
  • 25:$2.3872
  • 10:$2.5250
  • 1:$2.8100
FGA15N120ANTDTU-F109
DISTI # V36:1790_06359116		ON Semiconductor1200V NPT TRENCH IGBT0
    FGA15N120ANTDTU_F109
    DISTI # FGA15N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FGA15N120ANTDTU-F109)
    Min Qty: 214
    Container: Bulk    		Americas - 0
    • 1070:$1.3900
    • 2140:$1.3900
    • 214:$1.4900
    • 428:$1.4900
    • 642:$1.4900
    FGA15N120ANTDTU_F109
    DISTI # FGA15N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA15N120ANTDTU-F109)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 500:€1.1900
    • 1000:€1.1900
    • 50:€1.2900
    • 100:€1.2900
    • 25:€1.3900
    • 10:€1.6900
    • 1:€1.9900
    FGA15N120ANTDTU_F109
    DISTI # FGA15N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 24A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA15N120ANTDTU-F109)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.2900
    • 900:$1.2900
    • 1800:$1.2900
    • 2700:$1.2900
    • 4500:$1.2900
    FGA15N120ANTDTU-F109
    DISTI # 31Y1431    		ON SemiconductorIGBT, SINGLE, 1.2KV, 30A, TO-3P-3,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:186W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes2283
    • 500:$1.6300
    • 250:$1.7400
    • 100:$1.8600
    • 50:$2.0100
    • 25:$2.1700
    • 10:$2.3200
    • 1:$2.7400
    FGA15N120ANTDTU-F109
    DISTI # 512-FGA15N120ANTDTUF    		ON SemiconductorIGBT Transistors 1200V NPT Trench
    RoHS: Compliant    		497
    • 1:$2.7100
    • 10:$2.3000
    • 100:$1.8400
    • 500:$1.6100
    • 1000:$1.3300
    FGA15N120ANTDTU-F109Fairchild Semiconductor Corporation 
    RoHS: Not Compliant    		73350
    • 1000:$1.5400
    • 500:$1.6200
    • 100:$1.6900
    • 25:$1.7600
    • 1:$1.9000
    FGA15N120ANTDTU_F109
    DISTI # 6715398P    		ON SemiconductorTRANSISTOR IGBT N-CH 1.2KV 24A TO-3P(N), TU17
    • 500:£1.5600
    • 250:£1.6800
    • 100:£1.8000
    • 25:£1.9600
    FGA15N120ANTDTU-F109
    DISTI # 2453877    		ON SemiconductorIGBT, SINGLE, 1.2KV, 30A, TO-3P-3
    RoHS: Compliant    		2283
    • 1000:$2.0400
    • 500:$2.4800
    • 100:$2.8300
    • 10:$3.5400
    • 1:$4.1700
    FGA15N120ANTDTU-F109
    DISTI # 2453877    		ON SemiconductorIGBT, SINGLE, 1.2KV, 30A, TO-3P-32356
    • 500:£1.2500
    • 250:£1.4400
    • 100:£1.4700
    • 10:£1.8400
    • 1:£2.4100
    Bild Teil # Beschreibung
    FGA15N120ANTDTU

    Mfr.#: FGA15N120ANTDTU

    OMO.#: OMO-FGA15N120ANTDTU

    		 IGBT Transistors 1200V NPT Trench IGBT
    FGA15N120ANTDTU_F109

    Mfr.#: FGA15N120ANTDTU_F109

    OMO.#: OMO-FGA15N120ANTDTU-F109-126

    		 IGBT Transistors 1200V NPT Trench
    FGA15N120A

    Mfr.#: FGA15N120A

    OMO.#: OMO-FGA15N120A-1190

    		 Neu und Original
    FGA15N120ADN

    Mfr.#: FGA15N120ADN

    OMO.#: OMO-FGA15N120ADN-1190

    		 Neu und Original
    FGA15N120AND(IGBT)

    Mfr.#: FGA15N120AND(IGBT)

    OMO.#: OMO-FGA15N120AND-IGBT--1190

    		 Neu und Original
    FGA15N120ANDTU

    Mfr.#: FGA15N120ANDTU

    OMO.#: OMO-FGA15N120ANDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 24A 200W TO3P
    FGA15N120ANTD FGA25N120A

    Mfr.#: FGA15N120ANTD FGA25N120A

    OMO.#: OMO-FGA15N120ANTD-FGA25N120A-1190

    		 Neu und Original
    FGA15N120ANTD,FGA15N120A

    Mfr.#: FGA15N120ANTD,FGA15N120A

    OMO.#: OMO-FGA15N120ANTD-FGA15N120A-1190

    		 Neu und Original
    FGA15N120ANTDTU

    Mfr.#: FGA15N120ANTDTU

    OMO.#: OMO-FGA15N120ANTDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 30A 186W TO3P
    FGA15N120ANTDTU,FGA15N12

    Mfr.#: FGA15N120ANTDTU,FGA15N12

    OMO.#: OMO-FGA15N120ANTDTU-FGA15N12-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von FGA15N120ANTDTU_F109 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,94 $
    1,94 $
    10
    1,84 $
    18,38 $
    100
    1,74 $
    174,15 $
    500
    1,64 $
    822,40 $
    1000
    1,55 $
    1 548,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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